381 results about "Semiconductor detector" patented technology

A Silicon detector for x-ray imaging is based on multiple semiconductor detector modules (A) arranged together to form an overall detector area, where each semiconductor detector module includes an x-ray sensor of crystalline Silicon oriented edge-on to incoming x-rays and connected to integrated circuitry for registration of x-rays interacting in the x-ray sensor through the photoelectric effect and through Compton scattering and for an incident x-ray energy between 40 keV and 250 keV to provide the spatial and energy information from these interactions to enable an image of an object. Further, anti-scatter modules (B) are interfolded between at least a subset of the semiconductor detector modules to at least partly absorb Compton scattered x-rays.

A microdosimeter, comprising an array of three-dimensional p-n junction semiconductor detectors, each providing a sensitive volume-target and a tissue equivalent medium for generating secondary charged particles. The array is manufactured from a semiconductor on insulator wafer and the detectors are located to detect secondary charged particles generated in the tissue equivalent medium.

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighboring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

A radiological imaging apparatus comprising a semiconductor detector unit in which a plurality of semiconductor radiation detection elements are installed on a detector mounted substrate in a matrix to constitute a detector unit. A plurality of detector units are releasably mounted on a fixing substrate. This mounting is carried out mating a coupling screw with a threaded hole formed in the detector mounted substrate, the coupling screw being inserted through a through-hole formed in the fixing substrate. The detector mounted substrate is provided with a pair of positioning pins. The positioning pins are inserted into positioning holes, respectively, formed in the fixing substrate, to position the detector unit.

Provided are a method and device for improving detection sensitivity of a static collecting method emanometer. The detection sensitivity of the static collecting method emanometer is improved by improving collecting efficiency of positively charged 218Po in a static measuring cavity of the static collecting method emanometer, a metal net is arranged between the cavity wall of the measuring cavity and a semiconductor detector to improve the intensity of an electric field nearby the cavity wall of the measuring cavity, a ground wire of a high voltage module is connected to the surface of the semiconductor detector, a high-voltage output wire of the high voltage module is respectively connected to the cavity wall of the measuring cavity and the metal net, and therefore high voltages can be added between the cavity wall of the measuring cavity and the metal net and between the metal net and the surface of the semiconductor detector respectively. Due to the fact that the intensity of the electric field nearby the cavity wall of the measuring cavity can be improved by directly improving the voltages between the cavity wall of the measuring cavity and the metal net, the voltages between the cavity wall of the measuring cavity and the metal net and between the metal net and the surface of the semiconductor detector are adjusted to be proper values, and the collecting efficiency of the static field on the positively charged 218Po can be improved.