Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

AlGaN/PZT ultraviolet/infrared double-waveband detector

A dual-band detector and infrared detector technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limitations, low quantum efficiency of detectors, and difficulty in improving, so as to improve reliability, high quantum efficiency, and reduce The effect of false alarm rate

Inactive Publication Date: 2009-08-05
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This device has the characteristics and advantages of using the same material to detect different wavelength bands. However, due to the low fill factor of the MSM structure and the characteristics of the quantum well itself, the quantum efficiency of the detector is generally very low, and it is not easy to improve
This will make it limited in many applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • AlGaN/PZT ultraviolet/infrared double-waveband detector
  • AlGaN/PZT ultraviolet/infrared double-waveband detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0017] Material preparation of detection devices

[0018] See figure 1 , first, on one surface of the double-sided polished sapphire substrate 1, the epitaxial growth is arranged in sequence:

[0019] 0.1-1.5 micron thick GaN buffer layer 2;

[0020] 0.5-2 micron thick Si doping concentration is 10 18 cm -3 n-type AlGaN layer 3;

[0021] 0.2-0.4 micron thick I-type AlGaN layer 4;

[0022] 0.2-0.4um thick Mg doping concentration is 10 17 cm -3 p-type AlGaN layer 5 .

[0023] On the other surface of the double-sided polished sapphire substrate 1, the sol-gel method is used to grow in sequence:

[0024] 0.1-0.5 micron thick porous SiO 2 Insulation layer 6;

[0025] 0.02-0.08 micron thick LaNiO 3 Electrode layer 7;

[0026] 0.02-0.08 μm thick PZT film 8 .

[0027] Preparation of the UV detection part

[0028] Using a conventional device preparation process,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an AlGaN / PZT ultraviolet / infrared dual-band detector, which uses the dual-band absorption characteristics of the composite detection material AlGaN / PZT to simultaneously realize the detection of ultraviolet light and infrared light. The incident beam first passes through the AlGaN PIN structure, and the ultraviolet light with higher energy is absorbed and converted into ultraviolet photocurrent; the infrared light with lower energy passes through the sapphire substrate and is absorbed by the PZT ferroelectric film, and the formed photocurrent passes through the indium column. soldered out. The dual-band detector of the present invention makes full use of the detection advantages of different materials and realizes the simultaneous detection of two bands; meanwhile, the detector works at room temperature and is easy to use.

Description

technical field [0001] The invention relates to an ultraviolet / infrared dual-band detector, specifically AlGaN (aluminum gallium nitrogen) / PZT ((Pb(Zr x Ti 1-x )O 3 ) lead zirconate titanate) ultraviolet / infrared dual-band detector. Background technique [0002] While the detection scale continues to expand, improving the reliability of detection devices and reducing the false alarm rate of detection systems has become an important problem to be solved. One way is for the system to receive target information in different bands. Using two or more detectors, each detector detects a different band, the system can receive the target information, process it, and display it. Although this system using multiple detectors to achieve multi-band detection can reduce the false alarm rate of the system, the system is extremely complex, and when optical channel registration is required, it also requires precise adjustment of the optical system. [0003] The best way to obtain multi-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09
Inventor 张燕李向阳孙璟兰孟祥建
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com