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565 results about "Lead zirconate titanate" patented technology
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Lead zirconate titanate is an inorganic compound with the chemical formula Pb[ZrₓTi₁₋ₓ]O₃ (0≤x≤1). Also called Lead zirconium titanate, it is a ceramic perovskite material that shows a marked piezoelectric effect, meaning that the compound changes shape when an electric field is applied. It is used in a number of practical applications such as ultrasonic transducers and piezoelectric resonators. It is a white to off-white solid.
Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
InactiveUS6346741B1Easy to manufactureBig advantageOther chemical processesSemiconductor/solid-state device detailsLead zirconate titanateBarium strontium titanate
An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.
Owner:GULA CONSULTING LLC
Biomedical device, method for manufacturing the same and use thereof
InactiveUS20120165954A1Reduce usageEasy to processBone implantCeramic shaping apparatusLead zirconate titanatePorosity
A three-dimensional biomedical device having an osteoinductive first area with a controlled porosity and a second area, which is produced by laser technology from a powder including one of ceramics, metals, metal alloys, bioactive glasses, lead zirconate titanate and biocompatible polymers, or mixtures thereof. The ratio of the porosities from the second area to the first area is equal or less than one, preferably from 0.001 to 0.9. A method for manufacturing the device for fitting in a bone defect, wherein a virtual object is designed with a computer-aid designed software, and the device is manufactured by laser technology including layering a powder onto a plate (7) so that a layer of a predetermined thickness is formed; the laser beam (8) selectively processes the powder to produce a processed layer, and, thus, layer after layer, the layers are joined together until the biomedical device is formed.
Owner:NIMAL DIDIER
Amorphous dielectric capacitors on silicon
InactiveUS6255122B1Improve conformityReduce leakage currentTransistorSemiconductor/solid-state device manufacturingLead zirconate titanateMaterials science
High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.
Owner:GLOBALFOUNDRIES INC
Ultrasonograph, ultrasonic transducer, examining instrument, and ultrasonographing device
ActiveUS7421900B2Transmission propertyUltrasonic/sonic/infrasonic diagnosticsAnalysing solids using sonic/ultrasonic/infrasonic wavesLead zirconate titanateElectricity
An ultrasonograph, an ultrasonic transducer, an inspection device, and an ultrasonic imaging device enabling easy and quick inspection and high-resolution or high-speed processing are provided. Barium titanate (BaTiO3) or lead zirconate titanate (PZT) is used for a piezoelectric material constituting the ultrasonic transducer, and the thickness thereof is 0.1 μm to 100 μm. Included therein are a drive section capable of driving an arbitrary one of piezoelectric layers, a detecting section detecting electrical signals generated by the plural piezoelectric layers based on echoes from an inspection object, the echoes being originated from an ultrasonic wave generated by the driven piezoelectric layer, and a processing section performing processing for visualizing a state of the inspection object based on the detected electrical signals.
Owner:KK TOSHIBA
PZT amorphous alloy plating solution and method for plating a PZT amorphous alloy using the same
ActiveUS9909225B2Reduce variationImprove precisionCellsElectrolytic inorganic material coatingLead zirconate titanateAlloy
Owner:CAMMSYS CORP
One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode
InactiveCN102157682AWith ferroelectricityWith semiconductor performanceElectrical apparatusVacuum evaporation coatingLead zirconate titanateSputtering
The invention discloses a one-phase ferroelectric film capable of regulating effective resistance by ferroelectric polarization, a preparing method of the one-phase ferroelectric film and an effective resistance regulation mode. The one-phase ferroelectric film comprises B-bit-doped Bal-xSrxTil-yByO3, Pb(Fe1-yBy)O3, Pb(Co1-yBy)O3, (Pb1-xAx)(ZryTi1-y)O3, A-bit-doped Y1-xAxMnO3, Bil-xAxFeO3, and Bi4-xAxTi3O12. The one-phase ferroelectric film is prepared by using film preparing methods, such as pulsed laser deposition (PLD), laser molecular beam epitaxy (LMBE) and magnetron sputtering. The prepared ferroelectric film is 0.4-1000 nanometer in the thickness and has larger conductance and leakage current, as well as ferroelectricity and semiconductor performance. The invention provides a method for improving the antifatigue performance of the one-phase ferroelectric film. Turning frequency (x) of the ferroelectric polarization in the method can be increased to 102-1010; and the ferroelectric polarization is turned to regulate the effective resistance of the one-phase ferroelectric film.
Owner:NANJING UNIV OF SCI & TECH
Nanoscale Wire-Based Data Storage
The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electricallypolarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO3, lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electricallypolarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electricallypolarizable shell.
Owner:PRESIDENT & FELLOWS OF HARVARD COLLEGE
Piezoelectic element and method for manufacturing the same, and ink jet head and ink jet recording apparatus using the piezoelectric element
ActiveUS20050162047A1Easy accessHighly reliable piezoelectricPiezoelectric/electrostriction/magnetostriction machinesPiezoelectric/electrostrictive device material selectionLead zirconate titanatePiezoelectric thin films
A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1−x)(Zr(1−s)Tis)O3(0<s<1) or lead-zirconate-titanate-based oxide expressed as (Pb(1−x−y)Ay)(Zr(1−t)TisBt)O3(0<s<1, 0<t<1−s) where A is a substitutive metal ion in an A-site in the perovskite crystalline structure and B is a substitutive metal ion in a B-site in the perovskite crystalline structure. The value of x, which indicates a deficiency in Pb content in each composition, is more than 0 but not more than 0.15.
Owner:PANASONIC CORP
Piezo devices with air-spaced cantilever
ActiveUS20100270889A1High voltageDistanceAcceleration measurement using interia forcesPiezoelectric/electrostriction/magnetostriction machinesLead zirconate titanateMechanical energy
An arrangement that converts mechanical energy into electrical energy employs a base member and a cantilever member coupled thereto. The cantilever member has two piezoelectric layers with an air space therebetween. A proof mass is coupled to the cantilever member distal from the base member. The first and second piezoelectric layers are formed of lead zirconate titanate (PZT), and the output voltage of the cantilever member is proportional to the height of the air gap. A piezoresistive accelerometer that is useful for measuring mechanical vibration has a suspension beam and a piezoresistive layer be separated from the suspension beam. A method of monitoring an acoustic vibration utilizes a piezoresistive element having an air-spaced cantilever formed of a piezoelectric material in the vicinity of the system to be monitored and obtains an alternating voltage form the air-spaced cantilever of the piezoresistive element.
Owner:WAYNE STATE UNIV
Piezoelectric thin film and method of manufacturing the same, ink jet head, method of forming image with the ink jet head, angular velocity sensor, method of measuring angular velocity with the angular velocity sensor, piezoelectric generating element, and method of generating electric power with the piezoelectric generating element
ActiveUS20110143146A1Low dielectric lossImprove piezoelectric performanceAcceleration measurement using interia forcesPiezoelectric/electrostriction/magnetostriction machinesLead zirconate titanateAngular velocity
Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention comprises: a LaNiO3 film having a (001) orientation; a NaNbO3 film having a (001) orientation; and a (Bi, Na, Ba) TiO3 film having a (001) orientation. The LaNiO3 film, the NaNbO3 film, and the (Bi, Na, Ba)TiO3 film are laminated in this order.
Owner:PANASONIC CORP
Interposer capacitor built on silicon wafer and joined to a ceramic substrate
InactiveUS6791133B2Improve performanceHigh yieldTransistorSemiconductor/solid-state device detailsLead zirconate titanateBarium strontium titanate
An interposer, located between an integrated circuit having power, ground and signal connections and a ceramic substrate having power, ground and signal connections, that includes an oxide layer formed on a polished surface of a silicon substrate, a thin film dielectric capacitor formed on the oxide layer, a plurality of metallized that electrically connect to either of the electrodes of the thin film dielectric capacitor, and vias than conduct power, ground and signals between a the ceramic substrate and the integrated circuit. The interposer connects the metallized vias to the integrated circuit by solder connections and also connects the vias conducting power, ground and signals from the ceramic substrate to the interposer by solder connections. The dielectric of the thin film dielectric capacitor may be selected from the group of high-K titanates, such as, barium zirconate titanate, barium strontium titanate, pure barium titanate, barium titanate modified with Pb, Nb, W, Ca, Mg, and Zn, lead titanate, lead zirconate titanate, and polycrystalline lanthanum-modified lead zirconate titanate, or other high-K dielectrics, such as, lead niobate and its derivatives, and lead tungstate and its derivatives.
Owner:GLOBALFOUNDRIES US INC
Plumbum niobate-nicklate (PNN)-plumbum zirconate titanate (PZT) piezoelectric ceramic capable of being sintered at low temperature and preparation method thereof
InactiveCN102659404AImprove performanceLower sintering temperaturePiezoelectric/electrostrictive/magnetostrictive devicesLead zirconate titanateZirconate
The invention relates to a plumbum niobate-nicklate (PNN)-plumbum zirconate titanate (PZT) piezoelectric ceramic capable of being sintered at low temperature. The chemical formula of the PNN-PZT piezoelectric ceramic is 0.3Pb(Ni1 / 3Nb2 / 3)O3-0.7Pb(Zr0.44Ti0.56)O3+xCuO, wherein x is more than 0 and is less than or equal to 0.03. According to the PNN-PZT piezoelectric ceramic, a 0.3 PNN-0.7 PZT ternary piezoelectric ceramic material with high comprehensive performance is prepared by the conventional oxide mixing method and sintering CuO at low temperature under normal pressure on the basis of a Pb(Ni1 / 3Nb2 / 3)O3-Pb(Zr0.44Ti0.56)O3 system, so that the piezoelectric ceramic which can be sintered at low temperature and has high comprehensive performance is provided. The PNN-PZT piezoelectric ceramic is mainly applied to electronic devices of multilayer piezoelectric transformers, multilayer ceramic capacitors and the like which are sintered jointly at the low temperature.
Owner:TIANJIN UNIV
2-2 type ferroelectrics-ferrite multilayered compound magnetoelectricity material and the corresponding preparation method
InactiveCN101217182AIncrease the magnetoelectric coefficientTightly boundPiezoelectric/electrostrictive device manufacture/assemblyGalvano-magnetic material selectionLead zirconate titanateOrganic solvent
Owner:XIAMEN UNIV
Ultrasonic detector ultrasonic transducer, examining instrument and ultrosonograhping device
InactiveCN1492999AImprove sound transmission characteristicsAnalysing solids using sonic/ultrasonic/infrasonic wavesMechanical vibrations separationLead zirconate titanateBarium titanate
An ultrasonograph, an ultrasonic transducer, an inspection device, and an ultrasonic imaging device enabling easy and quick inspection and high-resolution or high-speed processing are provided. Barium titanate (BaTiO3) or lead zirconate titanate (PZT) is used for a piezoelectric material constituting the ultrasonic transducer, and the thickness thereof is 0.1 mum to 100 mum. Included therein are a drive section capable of driving an arbitrary one of piezoelectric layers, a detecting section detecting electrical signals generated by the plural piezoelectric layers based on echoes from an irradiation object, the echoes being originated from an ultrasonic wave generated by the driven piezoelectric layer, and a processing section performing processing for visualizing a state of the irradiation object based on the detected electrical signals.
Owner:KK TOSHIBA
Piezoelectric element and method for manufacturing the same, and ink jet head and ink jet recording apparatus using the piezoelectric element
ActiveUS7348715B2Highly reliable piezoelectricEasy to getPiezoelectric/electrostriction/magnetostriction machinesPiezoelectric/electrostrictive device material selectionLead zirconate titanateStoichiometric composition
A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1-x)(Zr(1-s)Tis)O3(0<s<1) or lead-zirconate-titanate-based oxide expressed as (Pb(1-x-y)Ay)(Zr(1-s-t)TisBt)O3(0<s<1, 0<t<1-s) where A is a substitutive metal ion in an A-site in the perovskite crystalline structure and B is a substitutive metal ion in a B-site in the perovskite crystalline structure. The value of x, which indicates a deficiency in Pb content in each composition, is more than 0 but not more than 0.15.
Owner:PANASONIC CORP
Three-component compound magnetoelectric material using organic polymer as adhesive and its preparation method
InactiveCN1395325AImprove mechanical propertiesHigh magnetoelectric conversion coefficientPiezoelectric/electrostrictive device manufacture/assemblyMagnetostrictive device manufacture/assemblyLead zirconate titanateBarium titanate
The invention relates to the ternary compound magneto-electric material by use of the organic macromolecule as the agglomerant as well as its preparation method.With the organic macromolecule being as the agglomerant the piezoelectric ceramic(such as lead zirconate titanate etc.)and the magnetostriction material(such as terbium-dysprosium-iron alloy)are taken shape by hot pressing at low temperature.The magneto-electric compound material can be made by the method.Comparing the prior art,the invention possesses the advantages of simple process,good mechanical characters of the material and high magneto-electric transformation factor.The hotpressing technique provides the features of low pressing temperature(about 120-200 deg.C),easy to change the magneto-electric characters by changing the sequence for adding the constituent and the relative content.
Owner:TSINGHUA UNIV
Method for preparing piezoelectric-ferroelectric thin film
InactiveCN101885606AStructural solutionSolve Thickness ProblemsLead zirconate titanateFerroelectric thin films
The invention provides a method for preparing a piezoelectric-ferroelectric thin film, relating to the technical field of preparation of lead zirconate titanate ceramics and being realized by the steps of preparing a precursor solution, utilizing a PLD method to prepare a substrate and adopting a Sol-Gel method to prepare the piezoelectric-ferroelectric thin film on a PZT crystal seed layer. The invention utilizes a method combing PLD and Sol-Gel to prepare a PZT thick film, thus having strong applicability to different substrates; and the prepared PZT thick film has the obvious advantages of high preferred orientation, even crystal size and compact structure, and can be used for preparing a lead zirconate titanate thin film with the thickness of 3-6 microns, the residual polarization value Pr of 25-45 mu C / cm<2> and the coercive field Ec of 40-65 kV / cm. At the same time, the method in the invention has relative low cost, strong controllability of programs and high industrialized application value.
Owner:SHANGHAI JIAO TONG UNIV +1
Strontium and barium doping lead niobium-stibium zirconate-titanate series piezoelectric ceramic and preparation method thereof
InactiveCN101265090ALow priceAbundant raw materialsPiezoelectric/electrostrictive/magnetostrictive devicesLead zirconate titanateElectronic communication
The invention discloses a Sr and Ba-doped lead niobium-stibium zirconate-titanate (PNSZT)-based piezoelectric ceramic. The piezoelectric ceramic has the chemical formula as follows: Pb0.96Sr0.03Ba0.03(Sb1 / 2Nb1 / 2)0.02(ZrxTi0.98-x) O3, wherein x is in the range of 0.51-0.525. The raw materials of the piezoelectric ceramic include Pb3O4, Nb2O5, Sb2O3, ZrO2, TiO2, SrCO3 and BaCO3. The invention also discloses a production method of the piezoelectric ceramic. The method comprises the following steps: (1) material compounding, (2) granulation, (3) molding, (4) adhesive removal, (5) sintering and (6) grinding, cleaning and polarization. The piezoelectric ceramic provided in the invention has the advantages of low price, easily-accessible raw materials, good dielectric and piezoelectric performances, good uniformity in crystal morphology, high Curie temperature, low optimal sintering temperature, and wide sintering range; and is widely used in the fields of machinery, electronics and communication.
Owner:TIANJIN UNIV
Touch panel and method of forming the same
InactiveUS20140247231A1Force measurement using piezo-electric devicesInput/output processes for data processingLead zirconate titanateEngineering
A touch panel comprises a plurality of basic sensing-units arranged in a matrix. The basic sensing-unit comprises a pressure-sensing transistor and a selection transistor. The pressure-sensing transistor comprises a first terminal, a second terminal, a gate electrode, a mask layer, a channel connecting the first and second terminals, a dielectric layer formed on the channel, and a piezoelectric material deposited on the dielectric layer. The piezoelectric material may comprise PVDF, lead zirconate titanate, ZnO, BaTiO3, LiNbO3, or PbTiO3. The selection transistor comprises a first terminal, a second terminal, and a third terminal. The first terminal of the selection transistor connects to a sensing electrode of the touch panel, the second terminal of the selection transistor connects to the first terminal of the pressure sensing transistor, and the third terminal of the selection transistor is a transistor gate and connects to a drive electrode of the touch panel.
Owner:CHUNG HUA UNIVERSITY
Method for preparing lead zirconate titanate ceramics fibre
The invention provides a preparation method of lead zirconate-titante ceramic fiber, which relates to a ceramic fiber. The fiber obtained with the diameter less than 30Mum and the length about 1cm has a single perovskite phase and comparatively high consistency and the invention can be a preparation method of lead zirconate-titante ceramic fiber of ceramic fiber for 1-3 piezoelectric composites. The preparation of lead zirconate-titante precursor solution is : lead acetate trihydrate is added into n-Butyl alcohol, complexing agent glacial acetic acid is added then; the mixture is heated, dissolved and cooled to obtain solution A; zirconium butoxide and titanium butoxide are poured into the n-Butyl alcohol in sequence to obtain the binary mixed solution of zirconium and titanium, and then acetyl acetone is added into the binary mixed solution and solution B is obtained after backflowing; the solution A and the solution B are mixed and the lead zirconate-titante precursor solution is obtained after backflowing. The preparation of lead zirconate-titante precursor sol is: the lead zirconate-titante precursor solution is steamed, concentrated and stirred, rod winding is carried out and the lead zirconate-titante precursor sol is obtained after concentration; lead zirconate-titante gel fiber is obtained through fiber drawing; after aging, the lead zirconate-titante gel fiber is dried and carried out by heat treatment.
Owner:XIAMEN UNIV
Method for manufacturing a ferroelectric capacitor having improved polarization characteristics and a method for manufacturing a ferroelectric memory device incorporating such capacitor
InactiveUS6472229B1Good polarization inversion characteristicAvoid changeTransistorSolid-state devicesIridiumLead zirconate titanate
The purpose of this invention is to provide a method for manufacturing capacitors free of polarization fatigue even when the treatment is performed at a low temperature.Amorphous layer 32 made of lead zirconate titanate and containing excess lead is formed on lower electrode 13 made of iridium. The amorphous layer is crystallized by a heat treatment to form PZT film 14. Structural transition layer 33 containing excess Pb formed on the surface of PZT film 14 during the aforementioned crystallization is removed by means of dry etching. In this way, a PZT capacitor is obtained.
Owner:TEXAS INSTR INC
Ferroelectric dielectric for integrated circuit applications at microwave frequencies
InactiveUS6146905AReduce decreaseAvoids and reduces problemSemiconductor/solid-state device manufacturingCapacitor with voltage varied dielectricLead zirconate titanateWater vapor
A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.
Owner:NORTEL NETWORKS LTD
Self-generating wireless positioning and tracking shoes
InactiveCN101874659AStable output voltageSimple structureBatteries circuit arrangementsPiezoelectric/electrostriction/magnetostriction machinesLead zirconate titanateElectricity
The invention discloses self-generating wireless positioning and tracking shoes. The self-generating wireless positioning and tracking shoes comprise a piezoelectric generating device (1) with multi-layer lead zirconate titanate (PZT) plate structure, a piezoelectric generating device (2) with interdigital structure, an electromagnetic coil generating device (3) and a GPS and GSM wireless positioning and tracking system, wherein the piezoelectric generating device (1) with multi-layer PZT plate structure is arranged on the bottom of an insole; the piezoelectric generating device (2) with interdigital structure is arranged at a bottom layer of a shoe heel; the electromagnetic coil generating device (3) is arranged at the middle part of the shoe heel, namely an air cushion part of the shoe; the GPS and GSM wireless positioning and tracking system is arranged on the side face of the upper; and alternating current produced by the piezoelectric generating device (1) with multi-layer PZT plate structure is collected by using a transformer, the alternating current produced by the piezoelectric generating device (2) with multi-layer PZT plate structure and the electromagnetic coil generating device (3) is collected by using a voltage doubling circuit, and the alternating current is rectified, boosted and stabilized by a voltage doubling, rectifying and boosting circuit to be supplied to a GPS and GSM module.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Dielectric nonlinear capacitor ceramic material and its making technique
InactiveCN1688004AHigh energy storage densityIncrease the number of cyclesFixed capacitor dielectricCeramicsLead zirconate titanateStrontium
This invention discloses an anti-ferroelectric ceramic capacitor material and its preparation technology, which applies Sn of positive four valency to replace Zr of positive 4 valency, applies the positive 3 valency La to replace 2 valency Pb in the compound of Pb(Zr, Ti) O3 to form a multi-component solid solution with Pb vacancy. The balanced formula of the charge and the valency is: (Pb1-3 2 / 2Laz)[(Zri-ysny)1-Tix]O3, in which, x varies between 0.06`0.20, y: 0.2010.40, z varies between 0.02-0.08, or positive 2 valency Sr or Ba is added to replace 2 valency Pb in Pb(zr, Ti) O3, the formula is [(Pb1-wBw)1-3z / 2Laz][Zr1-ySny]1-xTix ]O3, B expresses Sr or Ba of 2 valency, w varies between 0.02-0.12. A conventional electronic ceramic preparation method is applied in the method.
Owner:XI AN JIAOTONG UNIV
Ferro-voltage ceramic component with low sintering temperature character, production and uses thereof
InactiveCN101429022ALower sintering temperatureReduce volatilityPiezoelectric/electrostrictive/magnetostrictive devicesLead zirconate titanateElectricity
The invention relates to a ferroelectric piezoelectric ceramic with the characteristic of low sintering temperature. The compositions are (1-x-y)PbZrO3-xPbTiO3-yBi(Zn1 / 2Ti1 / 2)O3 and z weight percent of MnO2, wherein x is equal to between 0.30 and 0.50, y is equal to between 0.05 and 0.25, and z is equal to between 0.0 and 0.5. Oxide materials and the prior solid-state reaction electronic ceramic process are adopted to achieve the aim of sintering a compact piezoelectric ceramic chip at a low temperature between 900 and 1,000 DEG C. The PbZrO3-PbTiO3-Bi(Zn1 / 2Ti1 / 2)O3 ferroelectric piezoelectric ceramic is a single phase perovskite structure and has a 'hard' piezoelectric property. Presintering powder of the PbZrO3-PbTiO3-Bi(Zn1 / 2Ti1 / 2)O3 ferroelectric ceramic powder as a sintering auxiliary, and an electronic ceramic process of solid phase reaction are adopted so as to achieve the low temperature sintering of the strontium-doped lead zirconate titanate at a temperature of 1,050 DEG C as well as the modification of the piezoelectric property. The ferroelectric piezoelectric ceramic is particularly applicable to the manufactures of functional devices such as emission piezoelectric ceramic devices, low-temperature cofiring multi-layer ceramic piezoelectric drives, transformers, and transducers.
Owner:TONGJI UNIV
Intravascular ultrasound probing device
InactiveUS20060173337A1Avoid problemsBlood flow measurement devicesCatheterLead zirconate titanateSonification
The present invention provides an intravascular ultrasound probing device using Doppler effect. The intravascular ultrasound probing device comprises a first tube, a first ultrasound probe head positioned in the first tube, a second ultrasound probe head positioned in the first tube and an separating member positioned between the first ultrasound probe head and the second ultrasound probe head. Preferably, the first ultrasound probe head and the second ultrasound probe head are made of lead zirconate titanate (PZT), and can generate an ultrasound with a frequency between 1 MHz and 100 MHz. The first ultrasound probe head can measure the flow of the blood in a vessel, and the second ultrasound probe head can capture the image of the wall of the vessel. The separating member is preferably made of polymer for absorbing undesired reflection wave.
Owner:IND TECH RES INST
Potassium niobate deposited body and method for manufacturing the same, piezoelectric thin film resonator, frequency filter, oscillator, electronic circuit, and electronic apparatus
InactiveUS20060222872A1Polycrystalline material growthPiezoelectric/electrostrictive device manufacture/assemblyLead zirconate titanatePotassium
A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer, an electrode layer formed above the potassium niobate layer or the potassium niobate solid solution layer, and another substrate formed above the electrode layer.
Owner:SEIKO EPSON CORP
Method of preparing functional ceramic material
ActiveCN101125757AImprove uniformityGuaranteed uniformityLead zirconate titanateBarium strontium titanate
The invention discloses a preparation method of functional ceramics material and comprises the steps: (1) suspending liquid containing organic monomer, cross linker, evocating agent, dispersant and ceramics powder lot is prepared; (2) catalyst is added, slurry is injected into a ring mental die to be solidified in situ and wet rough-body of large size ceramics is obtained; (3) after being demoulded, the rough-body is put into a net clamp, the clamp is put into a climatic chamber to be dried and then put into an oven to be dried after a plurality of days; (4) the dried rough-body is batched out under certain temperature rising system and sintered into ceramics under high temperature. The invention prepares large size high performance lead zinc niobate-lead zirconate titanate piezoceramics, barium strontium titanate pyroelectric ceramics, lead manganese niobate-lead manganese stibate-lead zirconate titanate pyroelectric ceramics.
Owner:HUAZHONG UNIV OF SCI & TECH
Integrated optical crossbar switch
InactiveUS20030231821A1Multiplex system selection arrangementsCoupling light guidesLead zirconate titanateHemt circuits
Integrated optical crossbar switching method and apparatus preferably includes structure and / or function whereby switching and addressing circuitry is disposed on a substrate. An insulating layer is disposed on the substrate and on the switching and addressing circuitry. A polycrystalline ferroelectric layer is disposed on the insulating layer. The polycrystalline ferroelectric layer includes a first plurality of optical signal carriers and a second plurality of optical signal carriers, each disposed to receive an optical signal from at least one of the first plurality of optical signal carriers. A plurality of optical switching elements is disposed to (i) receive control and addressing signals from said switching and addressing circuitry, and (ii) to switch an optical signal from one of said first plurality of optical signal carriers to at least one of said second plurality of optical signal carriers. Preferably, PLZT (lead lanthanum zirconate titanate) materials are used in the core and cladding of the optical switching elements.
Owner:SOLID STATE PHOTONIX
High-efficiency cement-based piezoelectric material and synthesizing method thereof
The invention relates to a high-efficiency cement-based piezoelectric material and a synthesizing method thereof. The high-efficiency cement-based piezoelectric material is characterized by comprising the following steps of: performing ball-milling on 45 to 70 volume percent of plumbum zirconate titanate (PZT) and the balance of cement and reinforcing phase, wherein the cement accounts for 65 to 95 weight percent, and the reinforcing phase accounts for 5 to 35 weight percent, mixing uniformly, adding water and a superplasticizer, stirring uniformly, pressing for forming, maintaining, and polarizing to obtain the high-efficiency cement-based piezoelectric material. After the high-efficiency cement-based piezoelectric material is placed for 30 days, a piezoelectric strain constant d33 is between 70 and 100 pC / N. The high-efficiency cement-based piezoelectric material is high in piezoelectric performance, a preparation process is easy and convenient, is small in required polarization voltage, low in cost and convenient to apply and popularize.
Owner:WUHAN UNIV OF TECH
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