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427results about "Capacitor with voltage varied dielectric" patented technology

MEMS-based variable capacitor

A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor. An integrated circuit can be incorporation onto the multi-level substrate structure to enable a electronic closed-loop controlled variable capacitor module. The integrated circuit is flip-chip bonded at the bottom of the substrate structure with appropriate electrical connections between the integrated circuit and the MEMS variable capacitor device. A variation of the present invention utilizes a zipper actuation method wherein the tuning ratio of the variable capacitor is increased to very high levels. Yet another variation of the present invention utilizes a differential gap between the top and bottom electrodes such that the actuation electrodes do not physically contact one another. Yet another implementation of the present invention uses an extra set of electrodes or mechanical mechanism so as to lock the value of the capacitor indefinitely. Yet another implementation uses shaped actuation electrodes so as to linearize the relationship between the applied actuation voltage and the resultant capacitance of the device.
Owner:FOR NAT RES INITIATIVES

Embedded LSI having a FeRAM section and a logic circuit section

An embedded LSI includes a FeRAM macro block and an associated logic circuit section. A hydrogen barrier layer covers the FeRAM macro block as a whole and exposes the logic circuit section. The edge of the hydrogen barrier layer overlies the peripheral circuit of the FeRAM macro block and the boundary separating the FeRAM macro block from the logic circuit section. The ferroelectric capacitor is protected by the hydrogen barrier layer against hydrogen during a hydrogen-annealing process.
Owner:RENESAS ELECTRONICS CORP

Method for fabricating ferroelectric memory

Method for fabricating a nonvolatile ferroelectric memory, including the steps of (1) forming an insulating layer, a semiconductor layer, an etch stop layer, a lower electrode, a ferroelectric layer, and an upper electrode on a substrate in succession, (2) forming an etch mask pattern of a required form on the upper electrode, (3) using the etch mask pattern as a mask in subjecting the upper electrode, the ferroelectric layer, the lower electrode, the etch stop layer, the semiconductor layer, and the insulating layer to en bloc etching, to expose the substrate, and (4) removing the etch mask pattern, and forming source / drain regions in the exposed substrate, whereby providing a simple fabrication process and permitting to minimize an alignment allowance.
Owner:LG ELECTRONICS INC

Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates

Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
Owner:UNIV OF DAYTON THE

Quantum energy storage or retrieval device

InactiveUS6501093B1Small leakageEliminate air pollutionSolid-state devicesPhotovoltaicsHigh energyBusbar
A solid state Quantum high Energy density Storage Or Retrieval device known as a quensor, and the trademark ENSOR(TM), having an energy density of about 1-15 kwhr / kg, comparable to gasoline, or more, is described. A fundamentally new principle is employed: A quensor film comprises oriented molecules with donor and acceptor groups and with metal layers on its surfaces. A dipole electric field may be established in the gap between a donor and an acceptor. Electric energy is stored in or retrieved from dipole electric fields throughout the volume of the quensor film. Electric energy is stored in the quensor film by charging the dipole electric fields from an electric energy source. Electric energy is retrieved from a quensor film by discharging the dipole electric fields and supplying the energy to a load. Electric breakdown in the film is avoided because positive and negative electric charges in the film are balanced everywhere. Busbars attached to the metal layers are connected to terminals for charging or discharging the device. The manufacture of a quensor film is described. A composite photovoltaic and quensor panel for the storage or retrieval of solar-electric energy day or night on demand is also described.
Owner:MARKS ALVIN M
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