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53results about "Capacitor with temperature varied dielectric" patented technology

Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates

Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
Owner:UNIV OF DAYTON THE

Embedded capacitor

An embedded capacitor method and system is provided for printed circuit boards. The capacitor structure is embedded within an insulator substrate, minimizes real-estate usage, provides a high capacitance, enhances capacitance density, and yet forms an advantageous planar surface topography. A cavity is defined within and contained by an insulator substrate layer, and a dielectric material at least partially fills the cavity. The dielectric material is connected to an electrical conductor, and vias are used for interconnections and traces. In an aspect, a plurality of stacked insulator substrate layers define a plurality of cavities filled with the dielectric material, providing even greater capacitance. In another aspect, an array of cavities is formed in the insulator substrate layer. The embedded capacitor can be employed within numerous systems that utilize capacitors including automotive electronics such as a pressure sensor, an engine control module, a transmission controller, and radio systems including satellite radio devices.
Owner:DELPHI TECH INC

Tunable capacitor

The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (∈r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.
Owner:NXP BV
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