Surface acoustic wave device having a high k<2>, and a frequency filter, oscillator,
electronic circuit and electronic device employing this
surface acoustic wave device is provided, wherein a first
oxide thin film layer comprising SrO or MgO and a second
oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (110)
Si substrate, or a first
oxide thin film layer comprising CeO2, ZrO2 or
yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (100)
Si substrate, a KNbO3 piezoelectric thin film being then formed on top of either of these second oxide thin film
layers, and then, a protective film comprising oxide or
nitride is formed on top of the KNbO3 piezoelectric thin film, finally, at least one
electrode is formed on top of this protective film, to form a
surface acoustic wave device, which
surface acoustic wave device is employed to form a frequency filter, oscillator,
electronic circuit, or electronic device.