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70results about How to "Improve resonance characteristics" patented technology

Wireless power system comprising power transmitter and power receiver and method for receiving and transmitting power of the apparatuses

Provided is a transmitter in a wireless power transmission system, the transmitter including a Transmission (Tx) power converter for converting a Direct Current (DC) voltage into a first Alternating Current (AC) voltage, and converting the converted first AC voltage into a second AC voltage by amplifying the converted first AC voltage, a Tx matching circuit for matching an impedance thereof with that of a receiver for receiving the second AC voltage to transmit the second AC voltage, a Tx resonator for resonating the second AC voltage into resonant waves to transmit the second AC voltage to the receiver, and a Tx controller for determining an amplification rate of the first AC voltage and controlling the Tx power converter to convert the first AC voltage into the second AC voltage according to the determined amplification rate.
Owner:SAMSUNG ELECTRONICS CO LTD

Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator

A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.
Owner:MURATA MFG CO LTD

Film bulk acoustic resonator having supports and manufacturing method therefore

A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and / or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and / or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
Owner:SAMSUNG ELECTRONICS CO LTD

Piezoelectric thin film resonant element and circuit component using the same

A piezoelectric thin film resonant element includes a resonant portion having a laminate structure made up of a lower electrode, an upper electrode and a piezoelectric film arranged between these two electrodes. The lower electrode has an ellipsoidal plan-view shape and an outer circumference formed with an inclined portion inclined at an angle (about 30° for example) lying within a range of 25° through 55°. The upper electrode has an ellipsoidal plan-view shape. An additional film is provided on the upper electrode at a portion corresponding to the inclined portion of the lower electrode.
Owner:TAIYO YUDEN KK

Elastic wave device

ActiveUS20140203893A1Increase elastic energyImprove featuresImpedence networksMedia layerHigh velocity
An elastic wave device includes a medium layer, a piezoelectric body, and an IDT electrode that are disposed on a supporting substrate. The medium layer is made of a medium containing a low-velocity medium in which a propagation velocity of a same bulk wave as that which is a main vibration component of an elastic wave propagating in the piezoelectric body and being used is lower than a propagation velocity of the elastic wave, and a high-velocity medium in which the propagation velocity of the same bulk wave as that which is a main vibration component of the elastic wave is higher than the propagation velocity of the elastic wave.
Owner:MURATA MFG CO LTD

Acoustic Drum With Resonators Disposed Therein

An acoustic drum includes: a shell having first and second, spaced apart ends, and an interior surface defining an interior volume; a drumhead stretched over the first end of the shell; and at least one resonator coupled at one edge in lever fashion to the interior surface of the shell, the at least one resonator being sized and shaped to resonate at a frequency proximate to a peak resonant frequency of the drum.
Owner:PEAVEY ELECTRONICS

Elastic wave device and filter device

An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ν. The oblique angle ν is about 0.4° or more and about 10° or less.
Owner:MURATA MFG CO LTD

Surface acoustic wave device and manufacturing method thereof

InactiveUS20050127794A1Improved temperature characteristicExcellent resonance characteristicImpedence networksPiezoelectric/electrostriction/magnetostriction machinesResonatorInsertion loss
A piezoelectric substrate and interdigital electrode portions are covered with an insulating layer with an insulating thin film interposed therebetween. The piezoelectric substrate is made of LiTaO3 and the insulating thin film and the insulating layer are made of silicon oxide. By intentionally making the upper surface of the insulating layer flat, the deterioration of propagation efficiency of surface acoustic waves can be suppressed, so that it is possible to reduce increase in insertion loss of a resonator. Since the upper surface of the insulating layer is flat, it is also possible to reduce variation in resonant frequency and anti-resonant frequency due to the temperature change of the surface acoustic wave device.
Owner:ALPS ALPINE CO LTD

Long-line wind farm grid-connected resonance information extraction method

InactiveCN105676022AGood resonance characteristicsAccurately determine the resonance frequencyElectrical testingNODALAlgorithm
The invention relates to a method for extracting resonance information of a long-line wind farm grid connection, comprising the following steps: 1) establishing an equivalent model of a wind farm grid connection; 2) obtaining the wind farm grid connection system according to the wind farm grid connection equivalent model Nodal admittance matrix; 3) decompose said nodal admittance matrix into expressions about eigenvalues: Y f = LΛT; 4) According to step 3), the resonance participation factor of each node and the resonance sensitivity value of each electrical component are obtained when the long-line wind farm grid-connected resonance phenomenon occurs. Compared with the prior art, the present invention is based on the equivalent model of wind farm grid connection, and uses modal analysis method to analyze the resonance participation factors of each node of the system and the modal sensitivity of components, thereby giving detailed wind power grid connection resonance information, providing wind power It provides theoretical guidance for field construction planning, and has the advantages of accurate and reliable information extraction results.
Owner:SHANGHAI MUNICIPAL ELECTRIC POWER CO +1

Electronic component package and method of manufacturing same

An electronic component package according to the present invention includes a case (1) having a cavity portion containing an electronic component therein, and a lid member (8) fusion-welded to the case (1) via a fusion-welding layer (20) to close the cavity portion hermetically. The case (1) has a first metal layer (5) laminated on the case (1) in a manner to be exposed on the cavity open side. The lid member (8) has a core portion (9), and a second metal layer (10) laminated on a side of the core portion (9) facing the case (1). The fusion-welding layer (20) has a soldering material layer (12A) formed of a soldering material, and first and second intermetallic compound layers (5A) and (10A), respectively, formed on opposite sides of the soldering material layer (12A) as a result of diffusion of a major component of the soldering material into the first metal layer (5) and the second metal layer (10). The ratio of the area of the first and second intermetallic compound layers (5A) and (10A) in a longitudinal section of the fusion-welding layer (20) to the area of the longitudinal section of the fusion-welding layer (20) is in a range of from 25 to 98%. This package maintains superior airtightness even when exposed to a high-temperature atmosphere, which is higher than the melting point of the soldering material.
Owner:SUMITOMO SPECIAL METAL CO LTD +1

Design method of miniaturization label buckling antenna of tire embedded radio frequency identification device (RFID)

The invention discloses a design method of a miniaturization label buckling antenna of a tire embedded radio frequency identification device (RFID). The design method comprises the following steps of determining geometric dimension of bending units and input impedance of a label chip; determining quantity of the bending units in the horizontal direction; determining quantity of the bending units in the vertical direction; adjusting width of a meander line to enable antenna gain to be maximum; and increasing feed ends and adjusting loop inductance to enable the antenna impedance to be in conjugate match with the chip impedance. The design method is simple, effective and convenient to design, has good impedance matching characters, and enables the miniaturization label buckling antenna to be maximum in radiation gain and low in cost. Simultaneously, the design method can be applied to RFID application fields of communication, industrial control, equipment manufacturing, intelligent agriculture, food safety and the like.
Owner:GUIZHOU NORMAL UNIVERSITY

Acoustic wave element

An acoustic wave element includes an IDT electrode in contact with a piezoelectric material and including a plurality of electrode fingers, which include first and second electrode fingers that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger facing the first electrode finger via a gap located on an outer side in an electrode finger length direction of the first electrode finger. At an area near the gap, first protrusions are provided in at least one of the first electrode finger and the first dummy electrode finger, the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the at least one of the first electrode finger and the first dummy electrode finger. The acoustic wave element has greatly improved resonance characteristics of a resonance frequency and prevents short-circuit failure between electrode fingers and degradation in insulation properties.
Owner:MURATA MFG CO LTD

Internal and external double microring resonator structure

The invention discloses an internal and external double microring resonator structure comprising an N-Sub type substrate. A SiO2 buried layer is arranged on the top part of the N-Sub type substrate. An upper side straight waveguide and a lower side straight waveguide are respectively arranged at the two sides of the top part of the SiO2 buried layer. An external ring waveguide and an internal ring waveguide are arranged in the middle of the top part of the SiO2 buried layer. The internal and external double microring resonator structure has the advantages of flat harmonic peak and large free spectrum range so that the resonance characteristic of the microring resonator can be improved without increasing the chip area or the technology cost, and development of the microring resonator structure to the direction of high speed and low power consumption is facilitated.
Owner:XI'AN POLYTECHNIC UNIVERSITY

Circularly polarized microstrip antenna

The invention discloses a circularly polarized microstrip antenna, and mainly solves the problems that an existing satellite high speed communication antenna is narrow in frequency band, low in gain, and large in size. The circularly polarized microstrip antenna comprises a radiating unit (1), a dielectric lens (2), a support pillar (3), a parasitic patch layer (4), a patch layer (5), a floor layer (6) and a feed network layer (7). The radiating unit (1) is formed by the parasitic patch layer (4) and the patch layer (5), the floor layer (6) and the feed network layer (7) are adhered on the lower portion of the patch layer (5) in sequence, an orthometric double-fed feed unit is arranged at the back face of the feed network layer (7), and the feed unit extends to the right edge of the feed network layer (7)through feeder lines, and is welded with a sub-miniature-A (SMA) coaxial interface to carry out feed. The dielectric lens (2) is fixed above the parasitic patch layer (4) through the support pillar (3). The circularly polarized microstrip antenna has the advantages of being high in gain, wide in frequency band, small in structure, and capable of being used in various mobile communication base stations.
Owner:XIDIAN UNIV

Potassium sodium niobate based leadless piezoelectricity ceramic with high Qm and intermediate frequency resonator thereof

The invention discloses a leadless piezo-electric ceramics and middle-frequency resonator with high-m niobate K-Na group, which is characterized by the following: the component is displayed at (NaxK1-x+delta)Nb1+zO3+wmolCuO(0<=x<=1,0<=delta<=0.1, 0<=z<=0.2,0<=w<=0.1); the central frequency is 455kHz, which is consistent with leadless piezo-electric ceramic middle-frequency resonator; the band breadth Bw is between 10kHz and 25kHz with resonant impedance Zi less than 300 omega.
Owner:SICHUAN UNIV

Film bulk acoustic resonator

An object is to provide a film bulk acoustic resonator capable of improving resonant characteristics by reducing the generation of a standing wave to be caused by a transverse-mode acoustic wave to a minimum. In a film bulk acoustic resonator including a resonant portion A having a piezoelectric material layer 3 sandwiched between a first electrode 2 and a second electrode 4, the resonant portion A is configured to have a planar shape that is an ellipse having a part thereof cut off along a straight line L. The straight line L intersects at least one of a minor axis and a major axis of the ellipse, and preferably intersects both the minor axis and the major axis, and passes through the center of the ellipse.
Owner:SONY CORP

Loop coupling broadband miniaturized conical helical antenna

The invention discloses a loop coupling broadband miniaturized conical helical antenna which comprises a two-arm conical helical radiator, a medium supporting frustum, a feed balun, a feed connector, a cable joint, a coupling ring and a medium plate, wherein the two-arm conical helical radiator is attached to the surface of the medium supporting frustum, the feed balun is embedded into a center shaft in the medium supporting frustum, the two-arm conical helical radiator is connected with the upper end of the feed balun through the feed connector, the cable joint is connected with the lower end of the feed balun, the coupling ring is placed below the two-arm conical helical radiator and keeps a certain distance from the two-arm conical helical radiator, and the medium plate is arranged below the medium supporting frustum and plays a role in supporting the whole antenna. Miniaturization, wide broadband and high efficiency of the helical antenna can be achieved.
Owner:XIDIAN UNIV +1

Method of producing surface acoustic wave device and the surface acoustic wave device

A method of producing a surface acoustic wave device includes a sacrificial-layer forming step of forming a sacrificial layer on a piezoelectric substrate so as to cover comb electrodes and reflectors, a space-forming-member forming step of forming a space-forming member while openings are formed near the reflectors along a surface of the sacrificial layer, a sacrificial-layer removing step of removing the sacrificial layer from the openings of the space-forming member, and a resin sealing step of sealing a surface acoustic wave element with sealing resin, the surface acoustic wave element having an excitation protection space formed between the reflectors and the comb electrodes by the space-forming member.
Owner:QORVO US INC

Method of manufacturing a piezoelectric resonator

A piezoelectric resonator is manufactured by providing a first mother substrate in which first strip electrodes are formed such that they extend in a second direction that is substantially perpendicular to a first direction, wherein a direction of a line extending between an excitation electrode and a lead electrode is a first direction. A second mother substrate is produced by cutting the first mother substrate at a cutting position such that the length of the first strip electrodes as measured in the first direction achieves an accurate and ideal electrode overlapping length for a target resonance frequency. The second strip electrodes are formed on the resultant second mother substrate using a mask and then the second mother substrate is cut thereafter.
Owner:MURATA MFG CO LTD

Laminate with an electrically conductive layer formed as an antenna structure

A laminate is formed from a carrier layer and an electrically conductive layer. In one section, the conductive layer is formed into an antenna structure. The antenna structure can be produced in a joint operation with the electrically conductive layer. The antenna structure is connected to a microchip, so that data can be written in or read out without contact in a wireless transponder system.
Owner:INFINEON TECH AG

Micro-strip antenna facing optical and microwave coaxial detection application

The invention relates to and discloses a micro-strip antenna facing an optical and microwave coaxial detection application. The micro-strip antenna solves the problem that an existing micro-strip antenna can not achieve optical detection while emitting and receiving an electromagnetic wave. The micro-strip antenna comprises a transparent medium plate, a rasterization earth plate, a rasterization micro-strip patch, a rasterization micro-strip feeder line and a wave guide port, wherein the rasterization earth plate is fully spread on the lower surface of the transparent medium plate, the rasterization micro-strip patch is spread on the upper surface of the transparent medium plate, the center of the transparent medium plate and the center of the rasterization micro-strip patch coincide, the wave guide port is fixed on the side face of the transparent medium plate and is located at the middle position of the long edge of the transparent medium plate, the rasterization micro-strip feeder line is spread on the upper surface of the transparent medium plate and located between the wave guide port and the rasterization micro-strip patch, feed electricity is transmitted to the rasterization micro-strip feeder line and the rasterization earth plate through the wave guide port, and the rasterization micro-strip feeder line transmits the received feed electricity to the rasterization micro-strip patch. The micro-strip antenna is used for the coaxial optical detection of the optical and microwave detection.
Owner:HARBIN INST OF TECH

Piezoelectric thin film resonant element and circuit component using the same

A piezoelectric thin film resonant element includes a resonant portion having a laminate structure made up of a lower electrode, an upper electrode and a piezoelectric film arranged between these two electrodes. The lower electrode has an ellipsoidal plan-view shape and an outer circumference formed with an inclined portion inclined at an angle (about 30° for example) lying within a range of 25° through 55°. The upper electrode has an ellipsoidal plan-view shape. An additional film is provided on the upper electrode at a portion corresponding to the inclined portion of the lower electrode.
Owner:TAIYO YUDEN KK

Surface acoustic wave device suitable for use in GHz band

IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by λ, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H / λ of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaO3 substrate whose rotational cut angle θ from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.
Owner:ALPS ALPINE CO LTD

Short pitch alternation mixed trenching radiation type leak coaxial cable

The invention relates to a short pitch mixing tank radial type leaky coaxial cable which is mutually crisscross and has non-uniform spacing. The structure of the cable is formed by enveloping and sheathing an inner conductor of the leaky coaxial cable, an insulated foam material layer, an outer conductor of the leaky coaxial cable and an insulated outer sheath from inside to outside in sequence; the leaky coaxial cable is characterized in that periodical radiation notches are manufactured on the outer conductor of the leaky coaxial cable, the notch has a 'U' shape and an 'L' shape, and every repeated cycle includes two groups; six radiation notches are available, the shapes of the two 'U' shaped radiation notches in each group are the same as each other, but reverse alternately, and the shapes of the 'L' shaped radiation notches between the groups are the same as each other, but reverse alternately; central axes of the radiation notches in each group are mutually staggered at a certain distance. In the same group, the center to center spacing of the 'U' shaped radiation notches in same group is that A is equal to 40mm; the center to center spacing of the 'L' shaped radiation notches between different group is that B is equal to 120mm; the staggered distance among the central axes is that C is equal to 3mm.
Owner:ZHONGTIAN RADIO FREQUENCY CABLE CO LTD +1

Wide-passband 3D frequency selection surface

PendingCN110034408AAvoid deterioration of transmission characteristicsImproved Angular StabilityAntennasPhysicsDielectric plate
The invention discloses a wide-passband 3D frequency selection surface, and aims to improve the angle stability of the wide-passband 3D frequency selection surface. The wide-passband 3D frequency selection surface comprises mXn passive resonance units; each resonance unit comprises five layers of dielectric plates and four metal layers; each metal layer comprises four trapezoidal annular structures on the upper surface of the upper layer of the dielectric plate and the lower surface of the lower layer of the dielectric plate; the upper surface and the lower surface of the intermediate layer ofthe dielectric plate surround a square metal ring structure formed by the four edges of the dielectric plate, and two groups of 2X2 square ring structures in a square metal ring; the centers of the first group of the square ring structures are located at the four opposite corners of the dielectric plate; the centers of the second group of the ring structures are located on the center points of the center connecting lines of the adjacent first group of the ring structures; and the trapezoidal annular structures on the upper surface of the upper layer of the dielectric plate and the lower surface of the lower layer of the dielectric plate are correspondingly connected through lead wires. According to the structure, the angle stability is improved while edge steep drop and wide passband arerealized, so that the wide-passband 3D frequency selection surface can be applied to the situation of large incident angles and can be applied to the aspects of communication and radars.
Owner:XIDIAN UNIV

Ladder filter

ActiveUS20170093372A1Improve resonance characteristicsImprove out-of-band attenuation characteristicImpedence networksPhysicsResonator
A ladder filter includes a series arm resonator and parallel arm resonators including a first parallel arm resonator defining a pass band together with the series arm resonator, and a second parallel arm resonator. Each of dimensions, in an overlap width direction, of gap regions between the overlap width region and first and second busbars in the second parallel arm resonator is larger than a dimension, in the overlap width direction, of a gap region in the first parallel arm resonator. A resonant frequency of the second parallel arm resonator is in a frequency range of not lower than a resonant frequency of the series arm resonator.
Owner:MURATA MFG CO LTD

Subminiature internal antenna

Disclosed herein is a subminiature internal antenna, which exhibits a multi-band characteristic. The internal antenna includes a radiator electrically coupled at one end thereof to a feed element of a communication device and formed in a spiral shape as a whole. The radiator is disposed in such a manner as to extend at the other end thereof outwardly from the spiral shape. According to the present invention, the electromagnetic coupling is achieved in the radiator of the internal antenna and the other end of the radiator is disposed outwardly from the spiral shape so that the radiation interference is reduced to thereby obtain the multi-band characteristic.
Owner:EMW CO LTD

High-power and low-noise planar Gunn diode and preparation method thereof

The invention relates to a high-power and low-noise planar Gunn diode and a preparation method thereof. The high-power and low-noise planar Gunn diode comprises an insulation substrate, a channel layer, and a coplanar waveguide arranged above the channel layer, the length of a resonant cavity of the coplanar waveguide is integer multiples of one half of the resonance wavelength, and the characteristic impedance of the coplanar waveguide and the impedance (usually 50 ohm) of a load are the same with the resonant frequency. The planar Gunn diode is arranged in the resonant cavity of the coplanar waveguide so that the planar Gunn device can operate in a resonance mode, the emission power, the conversion efficiency and the frequency stability of the planar Gunn device are greatly improved, and the phase noise is reduced.
Owner:SHANDONG UNIV
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