4646 results about "Insertion loss" patented technology

A high frequency coaxial cable having a foil (7a) between the cable insulator (5) and cable braid (7b), is terminated to a coaxial connector (40) in a manner that allows fast and easy cable preparation and results in a termination with minimal axial electric field lines that cause a high insertion loss and a high VSWR (voltage standing wave ratio). A bore (46) at the rear portion of the connector outer conductor, receives the cable insulator with foil around the cable insulator. The bore has a front part (54) that forms an interference fit around the foil, to avoid an axially-extending gap which might contain axially-extending field lines. The front of cable insulator and foil are flush and both abut the insulation (25) of the connector.

Disclosed is a chromatic dispersion compensating optical fiber comprising a central core, an intermediate cladding having a width (r2−r1) of 2.0 microns or greater, and a depressed inner cladding having a refractive index difference Dn3 with the external optical cladding of −3.0×10−3 or lower. At a wavelength of 1550 nm, the optical fiber exhibits a positive chromatic dispersion of 21 ps / (nm·km) or higher and a ratio of mode radius to intermediate cladding radius of (W02 / r2) of 0.7 or less. The present optical fiber has a good figure of merit value and limited bending and microbending losses. The optical fiber can be rolled up in a housing of reduced size in a chromatic dispersion compensating optical module having limited insertion losses and reduced polarization mode dispersion.

A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

A component that functions with bulk acoustic waves, particularly a bandpass filter, has an increased number of degrees of design freedom in order to improve the transmission characteristics of the component. The component has BAW resonators coupled acoustically in the vertical and / or lateral direction through common electrodes, coupling layer systems and through the excitation of lateral acoustic modes. Through the acoustic coupling of the resonators, it is possible to create additional pole points in the transfer function so that in this manner, the rejection band characteristics of a bandpass filter can be improved. Through acoustic paths which are added in addition to the electrical connection, the insertion loss can be reduced. Through an acoustic coupling instead of an electrical connection, decoupling between input and output loops of a circuit can be achieved.

Techniques for improving electrical performance of a connector. The techniques are compatible with the form factor of a standardized connector, such as an SFP connector or stacked SFP. The resulting connector has reduced insertion loss for high speed signals. Such techniques, which can be used separately or together, include shaping of conductive elements within the connector while still retaining the same mating contact arrangement. Changes may be made at the contact tail portions or in the intermediate portions where engagement to a connector housing occurs. The techniques also include the incorporation of lossy bridging members between conductive elements designated to be ground conductors. For connectors according to the stacked SFP configuration, multiple bridging members may be incorporated at multiple locations within the connector.

A multi-layered LC composite component achieves greatly increased attenuation in the proximity of a central frequency without increasing insertion loss. In the arrangement of the multi-layered LC composite component, an end of each of inductor patterns is connected to a connecting pattern to be short-circuited. These inductor patterns define inductors. Frequency-adjusting capacitor patterns are opposed to open-circuited ends of the inductor patterns to define capacitors. As a result, the capacitors and the inductors define LC resonators. The connecting pattern is opposed to shield patterns via insulating sheets to define a common capacitor.