31results about How to "Improved piezoelectric response" patented technology

A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

An electrically-conductive composition essentially has (a) an electrically-conductive material consisting essentially of silver nanoparticles that have a d50 of less than or equal to 60 μm and a d90 of less than or equal to 500 μm; (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, which (b) particles have a d50 of 500 nm to 300 μm and a polydispersity coefficient of less than or equal to 3; (c) a binder material that is non-electrically-conductive; and (d) a solvent medium in an amount of less than or equal to 90 weight %, based on the total composition weight, which solvent medium is at least 50 weight % water. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 7:1.

An inertial piezoelectric device has: A) piezoelectric capacitor having a substrate; 2) a dry piezoelectric layer comprising a piezoelectric material; 3) a first electrode arranged contiguously with one opposing surface of the dry PL; and 4) a second electrode arranged contiguously with a second opposing surface of the first dry PL. The first dry electrically-conductive layer consists essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; C) a means for converting all or a portion of an applied force to an inertial force that is transmitted to the first dry PL; and optionally D) a proof mass that is contiguous with at least one external surface of the piezoelectric capacitor.

An in-situ apparatus is provided for monitoring the state of stress / strain and cracking in a die surface. The apparatus may also be used to facilitate the prudent removal of the die from the surface so that it may be repaired before catastrophic failure occurs. Accordingly, the yield of a process used to generate die cast structures may be greatly increased.

The invention provides a method for preparing a C-axis preferred orientation aluminum nitride polycrystalline film by magnetron sputtering and the aluminum nitride polycrystalline film, and relates to the technical field of film material preparation. In the present invention, the semiconductor material substrate and the high-purity sputtering aluminum target are relatively vertically placed, which can greatly increase the energy of migrating and moving parallel to the surface of the substrate after the sputtered aluminum atomic group reaches the substrate, and is conducive to the growth of the C-axis preferred orientation of the aluminum nitride film. Improve the piezoelectric response and electromechanical coupling coefficient of the film; the invention arranges a hot wire near the semiconductor material substrate, and the high-temperature radiation generated by the hot wire performs rapid heat treatment on the aluminum nitride film, which can improve the crystallization degree of the film. Therefore, the method provided by the present invention can realize the growth of C-axis preferred orientation aluminum nitride film by using magnetron sputtering technology at a lower temperature, and the obtained aluminum nitride film has high crystallinity, high piezoelectric response coefficient and electromechanical coupling The coefficient can be used as a chip material in surface acoustic wave devices or bulk acoustic wave devices.

The invention relates to the technical field of piezoelectric catalytic hydrogen production materials, and provides a tin, cerium-strontium titanate solid solution piezoelectric hydrogen production catalyst and a preparation method and application thereof. According to the material prepared by the present invention, its general chemical formula is Sn x Ce y Sr (1‑x‑y) TiO 3 (0<x≤0.15, 0<y≤0.15). In the present invention, Sr source, Ce source, Sn source and Ti source are mixed with water and ethylene glycol, and a co-precipitation method is used to prepare a precursor of a tin, cerium-strontium titanate solid solution piezoelectric hydrogen production catalyst, and finally calcined at high temperature A solid solution piezoelectric hydrogen production catalyst is formed. The results of the examples show that the introduction of Sn and Ce makes SrTiO 3 The piezoelectric hydrogen production performance has been greatly improved. And, when x=0.1, y=0.1, it has the best hydrogen production efficiency, reaching 411 μmol / g, much higher than SrTiO 3 of 53.45 μmol / g.

The invention relates to a nanometer carbon black / nanometer lead zirconate titanate / cement piezoelectric composite material and a preparation method thereof. The piezoelectric composite material consists of the nanometer lead zirconate titanate, the nanometer carbon black and the cement. The preparation method of the composite materials comprises the following steps: evenly mixing nanometer lead zirconate titanate powder, nanometer carbon black powder, cement powder and water; pressing the mixture into a wafer shape; and hydrating and drying the mixture. The material can be used for preparinga civil engineering sensor after polarizing and aging. The piezoelectric composite material has excellent piezoelectric responsivity.

A piezoelectric capacitor includes A) a composite article that has 1) a dry piezoelectric layer (dry PL); 2) a first dry electrode comprising a dry electrically-conductive layer arranged contiguously with a first opposing surface of the dry PL; and 3) a second dry electrode arranged contiguously with a second opposing surface of the dry PL. The dry electrically-conductive layer has essentially (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The capacitor also has B) electrical communication means attached to both electrodes for electrical communication of the composite article with an external electrical circuit.

The invention relates to a carbon nano tube / lead zirconate titanate / cement piezoelectric composite material for a civil engineering sensor and a preparation method thereof. The piezoelectric composite material consists of the carbon nano tube, the lead zirconate titanate and cement. The preparation method comprises the following steps: evenly mixing the carbon nano tube, lead zirconate titanate powder and cement powder; shaping the mixture with water; and hydrating and drying the mixture. The material can be used for preparing the civil engineering sensor after polarizing and aging. The piezoelectric composite material has excellent piezoelectric responsivity.

A sensing system responsive to a wavefield of acoustic or seismic signals. In one embodiment, the system includes a frame having a surface of tubular shape about which a layer of piezoelectric material can be positioned to extend along a first direction. A piezoelectric element is positioned under tension to apply a force against the frame, which tension increases signal response of the element.

A composite article useful in various electronic devices has 1) a dry piezoelectric layer (first dry PL) comprising a piezoelectric material, and 2) one or more dry dielectric layers arranged contiguously with opposing surfaces of the first dry PL. The dry dielectric layer has essentially: (a′) a dielectric material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a′) dielectric material by at least 10%. The (b) particles have a d50 of at least 500 nm and up to and including 500 m and a polydispersity coefficient that is less than or equal to 3, provided that the weight ratio of the (b) particles to the (a′) dielectric material is at least 0.01:1 and up to and including 10:1.

A composite article is designed for use in various devices and to exhibit improved piezoelectric effects. The composite article has 1) a dry piezoelectric layer (first dry PL) comprising a piezoelectric material, and 2) a dry electrically-conductive layer arranged contiguously with an opposing surface of the first dry PL. The dry electrically-conductive layer essentially has (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, and which (b) particles have a d50 of at least 500 nm and up to and including 500 μm and a polydispersity coefficient that is less than or equal to 3. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 10:1.