Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Passivated contact N type crystal silicon cell, preparation method, assembly and system

A crystalline silicon battery and crystalline silicon technology, applied in the field of solar cells, can solve the problems of high price of aluminum-doped silver paste and high proportion of silver-containing paste, so as to reduce carrier recombination, reduce silver paste consumption, Effects of high open circuit voltage and short circuit current

Active Publication Date: 2016-08-03
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the p+ doped region on the front surface generally uses aluminum-doped silver paste to make electrodes, and the price of aluminum-doped silver paste is generally relatively expensive, which leads to a high proportion of silver-containing paste in battery manufacturing costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Passivated contact N type crystal silicon cell, preparation method, assembly and system
  • Passivated contact N type crystal silicon cell, preparation method, assembly and system
  • Passivated contact N type crystal silicon cell, preparation method, assembly and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] see Figure 1 to Figure 8 As shown, a method for preparing a passivated contact N-type crystalline silicon cell in this embodiment mainly includes the following steps:

[0050] (1), select the N-type crystalline silicon substrate 10 of 156mm * 156mm, and do texture processing to the front surface of the N-type crystalline silicon substrate 10; The resistivity of the N-type crystalline silicon substrate 10 is 0.5~15Ω.cm, preferably 1 ~5Ω.cm; the thickness of the N-type crystalline silicon substrate 10 is 50-300 μm, preferably 80-200 μm; the battery structure after completing this step is as follows figure 1 shown.

[0051] (2), put the N-type crystalline silicon substrate 10 processed in step (1) into an industrial diffusion furnace to carry out boron diffusion to the suede surface to form a front p+ doped region 12, the boron source adopts boron tribromide, and the diffusion The temperature is 900-1000° C., and the time is 60-180 minutes. The square resistance after ...

Embodiment 2

[0063] see Figure 1 to Figure 6 , Figure 9 , Figure 10 , Figure 14 to Figure 16 As shown, a method for preparing a passivated contact N-type crystalline silicon cell in this embodiment includes the following steps:

[0064] Steps (1)-(8) are the same as those in Embodiment 1, and will not be repeated here.

[0065] (9), complete the metallization of the front surface of the N-type crystalline silicon substrate 10, the process includes the following steps:

[0066] (a) if Figure 9 As shown, the segmented sub-gate 27 is printed on the front surface of the N-type crystalline silicon substrate 10 using an aluminum-doped silver paste that can form an ohmic contact with the p+ doped region 12 . The length of the segmented sub-grid 27 is less than or equal to the side length of the cell, which is 154 mm in this embodiment, and preferably the segmented sub-grids are parallel to each other. The segmented sub-gate 27 may be composed of discontinuous lines, and each line is 30...

Embodiment 3

[0070] see Figure 1 to Figure 6 , Figure 11 to Figure 16 As shown, a method for preparing a passivated contact N-type crystalline silicon cell in this embodiment includes the following steps:

[0071] Steps (1)-(8) are the same as those in Embodiment 1, and will not be repeated here.

[0072] (9), complete the metallization of the front surface of the N-type crystalline silicon substrate 10, the process includes the following steps:

[0073] (a) if Figure 11As shown, the segmented sub-gate 27 is printed and sintered on the front surface of the N-type crystalline silicon substrate 10 using an aluminum-doped silver paste that can form an ohmic contact with the p+ doped region 12 . The length of the segmented sub-grid 27 is less than or equal to the side length of the cell, which is 154 mm in this embodiment, and preferably the segmented sub-grids are parallel to each other. The segmented sub-gate 27 may be composed of discontinuous lines, and each line is 30-300 microns l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a passivated contact N type crystal silicon cell, a preparation method thereof, a passivated contact N type crystal silicon cell assembly and a passivated contact N type crystal silicon cell system. The preparation method of the passivated contact N type crystal silicon cell includes the following steps that: a p+ doped region is formed on the front surface of an N-type crystalline silicon base body; a tunnel oxide layer is prepared on the back surface of the N-type crystalline silicon base body, a phosphorus-containing polycrystalline silicon layer is prepared on the tunnel oxide layer, and annealing is carried out; a passive antireflective film and a passive film are prepared; and back-surface silver electrodes and a front-surface electrode comprising metal wires are prepared. According to the preparation method of the passivated contact N type crystal silicon cell, the tunnel oxide layer and an n+ doped polycrystalline silicon layer can realize excellent surface passivation and field passivation, the back-surface silver electrodes do not destroy a passivation layer at the surface of the silicon base body, and carriers can selectively pass through the tunnel oxide layer and are collected by the metal electrode, and therefore, the passivated contact N type crystal silicon cell has high open-circuit voltage, short-circuit current and conversion efficiency; and the metal wires are adopted to form the front-surface electrode, and therefore, the silver slurry consumption of the cell can be reduced, and the production cost of a cell sheet can be reduced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a passivated contact N-type crystalline silicon cell, a preparation method, an assembly, and a system. Background technique [0002] A solar cell is a semiconductor device that converts solar energy into electrical energy, and its key indicator is photoelectric conversion efficiency. A variety of factors will affect the photoelectric conversion efficiency, among which the passivation quality of the silicon substrate surface is a more critical factor. The quality of passivation is good, and the surface recombination rate of the silicon substrate is low, so that higher open circuit voltage and short circuit current can be obtained, so the surface passivation of solar cells has always been the top priority of design and optimization. The common passivation method in the industry is to grow a passivation film on the surface of the silicon substrate. The common passivation film i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/068H01L31/0224H01L31/0216
CPCH01L31/02167H01L31/022425H01L31/068H01L31/1804H01L31/1868Y02E10/546Y02P70/50
Inventor 林建伟孙玉海刘志锋季根华张育政
Owner TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com