Passivation contact IBC battery and preparation method thereof, assembly and system
A battery and solar cell technology, applied in the field of solar cells, can solve the problems affecting the hidden open circuit voltage of the cell, the internal quantum efficiency of the dark saturation current density, and the back surface passivation effect is not good, and achieve good surface passivation effect, high Effects of Open Circuit Voltage and Conversion Efficiency
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[0041] The present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings. It should be noted that the described embodiments are only intended to facilitate the understanding of the present invention, rather than limiting it in any way.
[0042] A kind of preparation method of the IBC cell of passivation contact of the present embodiment, comprises the following steps:
[0043] (1), select the N-type crystalline silicon substrate 10 of 156mm*156mm, and do texture processing to the front surface of the N-type crystalline silicon substrate 10; The resistivity of the N-type crystalline silicon substrate 10 is 0.5~15Ω·cm, preferably 1 ~5Ω·cm; the thickness of the N-type crystalline silicon substrate 10 is 50-300 μm, preferably 80-200 μm; the battery structure after this step is as follows figure 1 shown.
[0044] (2), the back surface oxide layer 20 is grown on the back surface of the N-type crystalline silicon substrate 10, ...
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