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Method for achieving passivation of tunneling oxide layer of N-type double-sided battery

A technology for tunneling oxide layers and double-sided cells is applied in the field of solar cells, which can solve the problems of lack of mass production data and successful cases of mass production, and achieve the effects of good surface passivation, reduced concentration, and efficient transmission.

Inactive Publication Date: 2017-03-08
SHANGHAI SHENZHOU NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, this patent realizes the mass production of N-type double-sided cells prepared by tunneling the oxide layer method described in the patent, while the patent CN102263157A only theoretically expounds the structure of solar cells, without mass production data and mass production success cases

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  • Method for achieving passivation of tunneling oxide layer of N-type double-sided battery
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  • Method for achieving passivation of tunneling oxide layer of N-type double-sided battery

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Embodiment 1

[0036] A method for realizing the passivation of the tunnel oxide layer of an N-type double-sided cell, using the following steps:

[0037] (1) Texture treatment: Alkali texturing process is adopted, the texturing liquid is ethylene glycol solution of KOH, the alkali concentration is 1wt%, the texturing temperature is 70°C, and the texturing time is 30min;

[0038] (2) Fabrication of the front PN junction: The boron diffusion process is used to prepare the PN junction, and the obtained square resistance is 30Ω / □;

[0039] (3) Tunneling oxide layer: Tubular diffusion furnace is used to prepare tunneling oxide layer, and an oxide film with a thickness of 4nm is obtained on the front surface of N-type silicon wafers. Send it into the diffusion furnace, raise the temperature to 750°C, and then pass in N 2 , N 2 -BBR 3 and O 2 mixed gas, N 2 -BBR 3 and O 2 The volume ratio is 1:500, O 2 and N 2 The volume ratio of the silicon wafer is 1:1. After 10 minutes of treatment, th...

Embodiment 2

[0044] A method for realizing the passivation of the tunnel oxide layer of an N-type double-sided cell, using the following steps:

[0045] (1) Texture treatment: using alkali texturing process, the texturing liquid is ethylene glycol solution of KOH, the alkali concentration is 2wt%, the texturing temperature is 80°C, and the texturing time is 20min;

[0046] (2) Fabrication of the front PN junction: the PN junction is prepared by the boron diffusion process, and the square resistance obtained by the treatment is 50Ω / □;

[0047] (3) Tunneling oxide layer: Tubular diffusion furnace is used to prepare the tunneling oxide layer, and an oxide film with a thickness of 3nm is obtained on the front surface of the N-type silicon wafer. Send it into the diffusion furnace, raise the temperature to 800°C, and then pass in N 2 , N 2 -BBR 3 and O 2 mixed gas, N2 -BBR 3 and O 2 The volume ratio is 2:500, O 2 and N 2 The volume ratio is 1:3. After 20 minutes of treatment, the silico...

Embodiment 3

[0052] A method for realizing the passivation of the tunnel oxide layer of an N-type double-sided cell, using the following steps:

[0053] (1) Texture treatment: adopt alkali texturing process, the texturing liquid is the isopropanol solution of NaOH, the concentration of lye is 1wt%, the texturing temperature is 85°C, and the texturing time is 15min;

[0054] (2) Fabrication of the front PN junction: the PN junction is prepared by the boron diffusion process, and the square resistance obtained by the treatment is 65Ω / □;

[0055] (3) Tunneling oxide layer: Tubular diffusion furnace is used to prepare tunneling oxide layer, and an oxide film with a thickness of 2nm is obtained on the surface of N-type silicon wafers. Specifically, silicon wafers with PN junctions prepared on the front side are sent back to back into the diffusion furnace, raise the temperature to 850°C, and then pass N 2 , N 2 -BBR 3 and O 2 mixed gas, N 2 -BBR 3 and O 2 The volume ratio is 3:500, O 2 ...

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Abstract

The invention relates to a method for achieving passivation of a tunneling oxide layer of an N-type double-sided battery. The method comprises six steps of texturing treatment, front PN junction manufacturing, tunneling oxide layer preparation, back phosphorus doping, passivation layer manufacturing and electrode printing. Compared with the prior art, the method has the advantages that a boron-doped ultrathin oxide layer is prepared on the surface of a silicon wafer through a diffusion method by adopting a tunneling oxide layer passivation contact technology, and the oxide layer forms a passivation contact structure on the surface of the silicon wafer, so that the production efficiency of the N-type double-sided battery is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for realizing the passivation of tunnel oxide layers of N-type double-sided cells. Background technique [0002] In the research of crystalline silicon solar cells, since N-type silicon wafers are more stable than P-type silicon wafers and have a longer minority carrier lifetime, they have become a research direction in the photovoltaic industry, and double-sided cells prepared from N-type silicon wafers have The ability of double-sided power generation, higher cell efficiency, and greater market potential has become a research hotspot in the photovoltaic industry. [0003] In the preparation process of crystalline silicon solar cells, surface passivation has always been the top priority of design and optimization. Currently commonly used passivation media are silicon oxide, aluminum oxide, silicon nitride, etc. The passivation medium suitable for the p-type doped surface is...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1868Y02P70/50
Inventor 巩翠翠郑飞马贤芳陶智华张忠卫阮忠立石磊
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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