Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method adopting PECVD for preparing back passivation film layer of solar back passivation battery

A technology of back passivation and solar energy, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing the cost of back passivation batteries, high safety level requirements, and potential safety hazards, so as to improve the surface passivation effect and enhance Long-wave response and less production process

Inactive Publication Date: 2015-04-29
JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
View PDF10 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For production enterprises or research and development institutions, the use of TMAL sources is a great security risk
[0004] On the other hand, the back passivation layer is AlO x +SiN x When the structure is formed, professional ALD or PECVD equipment is usually required to plate AlO x layer, these devices require high safety levels and are expensive, which increases the cost of back passivation battery production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method adopting PECVD for preparing back passivation film layer of solar back passivation battery
  • Method adopting PECVD for preparing back passivation film layer of solar back passivation battery
  • Method adopting PECVD for preparing back passivation film layer of solar back passivation battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A method for preparing a back passivation film layer of a solar back passivation battery using PECVD equipment provided in this embodiment comprises the following steps:

[0015] 1). Pretreatment of the original silicon wafer, the pretreatment includes the processes of texturing, diffusion and etching in the battery process;

[0016] 2). Use PECVD equipment to plate the back passivation film on the etching surface. The bottom layer is SiOx layer 1, the refractive index is 1.50, and the thickness of the film layer is 45nm; the upper layer is a single layer of SiN x Layer 2, the refractive index is 2.05, and the film thickness is 150nm;

[0017] 3). Use PECVD equipment to coat the diffusion surface, and use traditional battery printing technology to print the back electrode, aluminum back field, positive grid line and positive electrode after the back laser engraving, and sinter;

[0018] After testing, it is found that the photoelectric conversion efficiency of the back...

Embodiment 2

[0023] A method for preparing a back passivation film layer of a solar back passivation battery using PECVD equipment provided in this embodiment comprises the following steps:

[0024] 1). Pretreatment of the original silicon wafer, the pretreatment includes the processes of texturing, diffusion and etching in the battery process;

[0025] 2). Use PECVD equipment to plate the back passivation film on the etching surface. The bottom layer is SiOx layer 1, the refractive index is 1.60, and the film thickness is 90nm; the upper layer is double-layer SiN x Layer 2, the refractive index of SiN near the SiOx layer is 2.05, the film thickness is 50nm, the outermost layer SiNx has a refractive index of 2.0, and the film thickness is 50nm;

[0026] 3). Use PECVD equipment to coat the diffusion surface, and use traditional battery printing technology to print the back electrode, aluminum back field, positive grid line and positive electrode after the back laser engraving, and sinter; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method adopting PECVD for preparing a back passivation film layer of a solar back passivation battery. The back passivation film layer adopts a bottom layer of PECVD equipment as a SiOx layer, the refraction index of the SiOx layer is 1.48-1.8, and the thickness of the SiOx layer is 20-90 nm; a top layer of the back passivation film layer is a SiNx layer, the SiNx layer can be single-layer SiN and multi-layer SiN different in refractive index, the refractive index ranges from 1.9 to 2.25, and the thickness is 50-200 nm; the total film thickness of the back passivation film layer is 100-290 um, and the refraction index is 1.8-2.2. According to the method, the back interface state of a battery piece can be reduced, the passivation effect is improved, reflection of incident light can be improved, the light path is prolonged, the long wave response of a crystal silicon battery is improved, short-circuit currents are increased, and therefore the efficient back passivation battery is prepared.

Description

technical field [0001] The invention relates to the field of solar cell production, in particular to a method for preparing a back passivation film layer of a solar back passivation cell by PECVD. Background technique [0002] At present, with the environmental problems and energy problems getting more and more people's attention, the research and development of solar cells as a clean energy has entered a new stage. In order to reduce the cost of crystalline silicon and adapt to the highly competitive photovoltaic industry, the thickness of crystalline silicon cells is getting thinner and thinner, because crystalline silicon is a gap material with a small light absorption coefficient, and the loss caused by transmitted light will be reduced by the thickness of the silicon wafer Therefore, in today's increasingly thinner crystalline silicon, high-efficiency battery technology based on thinner crystalline silicon is the research focus of major companies and universities. At p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1868Y02E10/50Y02P70/50
Inventor 瞿辉徐春曹玉甲张一源
Owner JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com