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Back-passivation efficient PERL battery technology

A process and battery technology, applied in the field of high-efficiency PERL battery technology with back passivation, can solve the problems of unstable process, difficult removal of borosilicate glass phase, cross-doping, etc., and achieve the goal of simplifying the process flow, reducing production costs and reducing dosage Effect

Inactive Publication Date: 2015-06-17
SHANGHAI SHENZHOU NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent is about the preparation process of double-sided batteries. In the patent, when using NH4F etching solution for single-sided etching, special protection is required for the other side. If the process is unstable, it will have a great impact on the subsequent diffusion of POCL3, and cross-doping is easy to occur Phenomenon
Moreover, the reaction speed between NH4F solution and silicon wafer etching is very slow, and the borosilicate glass phase (BSG) formed by BBR3 high-temperature diffusion is also very difficult to remove, so the feasibility of its patent needs to be verified

Method used

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Examples

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Embodiment 1

[0030] A back passivation high-efficiency PERL battery process, the process is as follows figure 1 As shown, the following steps are taken:

[0031] Step 1: Clean the original silicon wafer in HF / HNO3 mixed solution to remove surface damage layer, cutting line marks, etc.;

[0032] Step 2: Polishing the silicon wafer on both sides in NaOH solution;

[0033] Step 3: Deposit SiOx on one side of the polished silicon wafer. High-temperature thermal oxidation, PECVD or APCVD can be used to deposit SiOx film on one side, and anneal at 400°C to densify it;

[0034] Step 4: prepare a 1-2um high pyramid suede surface on one side of the above silicon wafer in TMAH;

[0035] Step 5: Deposit and diffuse POCL3 on one side of the above-mentioned silicon wafer in a high-temperature furnace;

[0036] Step 6: Using wet etching equipment to remove the surface phosphosilicate glass (PSG);

[0037] Step 7: Deposit SiNx with a thickness of about 80nm on the front side in a tube or plate PECVD ...

Embodiment 2

[0045] A back passivation high-efficiency PERL battery process, the process is the same as in embodiment 1, the difference is that step (3) deposits a SiNx dielectric layer on one side of the polished silicon wafer. Step (8) Depositing a SiOx dielectric layer on the back of the polished surface of the silicon wafer.

Embodiment 3

[0047] A back passivation high-efficiency PERL battery process, the process is the same as in embodiment 1, the difference is that step (3) deposits an a-Si dielectric layer on one side of the polished silicon wafer. Step (8) Depositing an a-Si dielectric layer on the back of the polished surface of the silicon wafer.

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Abstract

The invention relates to a back-passivation efficient PERL battery technology. The back-passivation efficient PERL battery technology comprises the steps that a silicon wafer is cleaned in a HF / HNO3 mixed solution, a surface damaged layer is removed, double-side polishing is carried out, a SiOx film layer is deposited on a single-side, a suede face is made, POCl3 single-side deposition and diffusion are carried out in a high-temperature furnace, surface phosphorosilicate glass is removed, SiNx with a thickness of 80 nm is deposited on the front side of the silicon wafer, SiOx with a thickness ranging from 10 nm to 20 nm is deposited on the back side of a polished surface of the silicon wafer, an SiNx layer with a thickness ranging from 100 nm to 200 nm is deposited in a pipe-type or a plate-type PECVD equipment, slots and holes are formed in a back-passivation layer, and silk-screen printing and sintering are carried out on back aluminium paste, a back electrode and a positive electrode. Compared with the prior art, the technology is simplified, and therefore the large-scale mass production is facilitated.

Description

technical field [0001] The invention relates to the research on industrialized high-efficiency back passivation PERL battery, in particular to a technology of back passivation high-efficiency PERL battery. Background technique [0002] In response to several guidelines issued by the State Council on the photovoltaic industry's new production capacity monocrystalline cell efficiency greater than 20%, and polycrystalline cell efficiency greater than 18%, it is most practical to choose a solution that is easy to be compatible with existing scale production lines and easy to control production costs technical route. [0003] Back-passivated high-efficiency crystalline silicon cells are currently the most potential to achieve 20% cell efficiency. Its technical route is based on the passivated cell emitter junction and rear partial contact (PERL) cell structure, and the cell cost controllable high-efficiency crystalline silicon cell technology route. However, the high-efficiency ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02363Y02P70/50
Inventor 汪建强周利荣
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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