Back-passivation efficient PERL battery technology

A process and battery technology, applied in the field of high-efficiency PERL battery technology with back passivation, can solve the problems of unstable process, difficult removal of borosilicate glass phase, cross-doping, etc., and achieve the goal of simplifying the process flow, reducing production costs and reducing dosage Effect

Inactive Publication Date: 2015-06-17
SHANGHAI SHENZHOU NEW ENERGY DEV
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This patent is about the preparation process of double-sided batteries. In the patent, when using NH4F etching solution for single-sided etching, special protection is required for the other side. If the process is unstable, it will have a great impact on the subsequent diffusion of POCL3, and cross-doping is easy to occur Phenomenon
Moreover, the reaction speed between NH4F solution and silicon wafer etching is very slow, and the borosilicate glass phase (BSG) formed by BBR3 high-temperature diffusion is also very difficult to remove, so the feasibility of its patent needs to be verified

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back-passivation efficient PERL battery technology
  • Back-passivation efficient PERL battery technology
  • Back-passivation efficient PERL battery technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A back passivation high-efficiency PERL battery process, the process is as follows figure 1 As shown, the following steps are taken:

[0031] Step 1: Clean the original silicon wafer in HF / HNO3 mixed solution to remove surface damage layer, cutting line marks, etc.;

[0032] Step 2: Polishing the silicon wafer on both sides in NaOH solution;

[0033] Step 3: Deposit SiOx on one side of the polished silicon wafer. High-temperature thermal oxidation, PECVD or APCVD can be used to deposit SiOx film on one side, and anneal at 400°C to densify it;

[0034] Step 4: prepare a 1-2um high pyramid suede surface on one side of the above silicon wafer in TMAH;

[0035] Step 5: Deposit and diffuse POCL3 on one side of the above-mentioned silicon wafer in a high-temperature furnace;

[0036] Step 6: Using wet etching equipment to remove the surface phosphosilicate glass (PSG);

[0037] Step 7: Deposit SiNx with a thickness of about 80nm on the front side in a tube or plate PECVD ...

Embodiment 2

[0045] A back passivation high-efficiency PERL battery process, the process is the same as in embodiment 1, the difference is that step (3) deposits a SiNx dielectric layer on one side of the polished silicon wafer. Step (8) Depositing a SiOx dielectric layer on the back of the polished surface of the silicon wafer.

Embodiment 3

[0047] A back passivation high-efficiency PERL battery process, the process is the same as in embodiment 1, the difference is that step (3) deposits an a-Si dielectric layer on one side of the polished silicon wafer. Step (8) Depositing an a-Si dielectric layer on the back of the polished surface of the silicon wafer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a back-passivation efficient PERL battery technology. The back-passivation efficient PERL battery technology comprises the steps that a silicon wafer is cleaned in a HF / HNO3 mixed solution, a surface damaged layer is removed, double-side polishing is carried out, a SiOx film layer is deposited on a single-side, a suede face is made, POCl3 single-side deposition and diffusion are carried out in a high-temperature furnace, surface phosphorosilicate glass is removed, SiNx with a thickness of 80 nm is deposited on the front side of the silicon wafer, SiOx with a thickness ranging from 10 nm to 20 nm is deposited on the back side of a polished surface of the silicon wafer, an SiNx layer with a thickness ranging from 100 nm to 200 nm is deposited in a pipe-type or a plate-type PECVD equipment, slots and holes are formed in a back-passivation layer, and silk-screen printing and sintering are carried out on back aluminium paste, a back electrode and a positive electrode. Compared with the prior art, the technology is simplified, and therefore the large-scale mass production is facilitated.

Description

technical field [0001] The invention relates to the research on industrialized high-efficiency back passivation PERL battery, in particular to a technology of back passivation high-efficiency PERL battery. Background technique [0002] In response to several guidelines issued by the State Council on the photovoltaic industry's new production capacity monocrystalline cell efficiency greater than 20%, and polycrystalline cell efficiency greater than 18%, it is most practical to choose a solution that is easy to be compatible with existing scale production lines and easy to control production costs technical route. [0003] Back-passivated high-efficiency crystalline silicon cells are currently the most potential to achieve 20% cell efficiency. Its technical route is based on the passivated cell emitter junction and rear partial contact (PERL) cell structure, and the cell cost controllable high-efficiency crystalline silicon cell technology route. However, the high-efficiency ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCH01L31/02363Y02P70/50
Inventor 汪建强周利荣
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap