The invention relates to a back-
passivation efficient
PERL battery technology. The back-
passivation efficient
PERL battery technology comprises the steps that a
silicon wafer is cleaned in a HF / HNO3
mixed solution, a surface damaged layer is removed, double-side
polishing is carried out, a SiOx film layer is deposited on a single-side, a suede face is made, POCl3 single-side deposition and
diffusion are carried out in a high-temperature furnace, surface phosphorosilicate glass is removed, SiNx with a thickness of 80 nm is deposited on the front side of the
silicon wafer, SiOx with a thickness
ranging from 10 nm to 20 nm is deposited on the back side of a polished surface of the
silicon wafer, an SiNx layer with a thickness
ranging from 100 nm to 200 nm is deposited in a
pipe-type or a plate-type PECVD equipment, slots and holes are formed in a back-
passivation layer, and silk-
screen printing and
sintering are carried out on back
aluminium paste, a back
electrode and a positive
electrode. Compared with the prior art, the technology is simplified, and therefore the large-scale
mass production is facilitated.