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Electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic

A technology of transient temperature and simulation methods, which is applied in electrical digital data processing, special data processing applications, instruments, etc., and can solve problems such as low simulation accuracy, complicated experimental process, and many temperature-related parameters

Active Publication Date: 2012-03-07
NAVAL UNIV OF ENG PLA
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Problems solved by technology

[0015] The technical problem to be solved by the present invention is the deficiencies in the electrothermal simulation method for the FS type IGBT transient temperature characteristics, and solves the following problems: the existing method or the extraction of temperature-related parameters by experimental methods: there are many temperature-related parameters to be extracted, and the experiment The process is complicated, or the empirical formula is used to calculate, and the simulation accuracy is low

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  • Electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic
  • Electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic
  • Electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic

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Embodiment Construction

[0065] In this embodiment, the FS type IGBT is taken as an example, and the electrothermal simulation method of the transient temperature characteristics of the FS type IGBT is considered. It should be noted that, since the general switching transient model is first established in the electrothermal model establishment method, and this process is similar to the modeling method in the prior art, although the FS type IGBT is taken as an example in this embodiment, the present The method described in the invention can be applied to the establishment of other types of IGBT electrothermal models.

[0066] (A) The switching transient model of FS-type IGBT is established by using semiconductor physics method, and the voltage and current relationship equations of the three ports of FS-type IGBT cathode, anode and gate are obtained;

[0067] for the establishment figure 1 The simulation model of the FS-type IGBT shown, first establish figure 2 The analytical coordinate system shown....

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Abstract

The invention provides an electro-thermal simulation method for FS (Field Stop) type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristic. An FS type IGBT switching transient working process is actually tested and is analyzed by being combined with an IGBT working principle and a semiconductor physical principle to determine that the IGBT transient temperature characteristic is mainly influenced by life of internal excess carrier, so that the electro-thermal simulation method is established. The method comprises the following steps of: actually testing carrier life values extracted at different temperatures to acquire a relational expression of the carrier life and temperature; calculating through an empirical value formula to acquire a relational expression amongthreshold voltage, transconductance, emitter saturation and current as well as the temperature; and adding temperature related parameters into an FS type IGBT current tailing stage current analyticalexpression and a switching transient model equation set and calculating to acquire transient working waveform of the FS type IGBT at different temperatures. The electro-thermal model simulation method provided by the invention simultaneously has the advantages of simple parameter calculation and high accuracy.

Description

technical field [0001] The invention relates to an electrothermal model simulation method, in particular to an electrothermal simulation method suitable for FS type IGBT (Insulated Gate Bipolar Transistor) transient temperature characteristics. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a composite device that combines power field effect transistor (MOSFET) and bipolar power transistor (Bipolar Junction Transistor-BJT) structure. It has both simple driving and low loss , can withstand high voltage and high current, good thermal stability and other advantages, it has been widely used in various medium and high-power power electronic devices, and is currently the most widely used full-control power electronic device. [0003] Since the emergence of IGBT, the simulation model is an important tool to guide its structure optimization and engineering application. Generally speaking, the accuracy of the IGBT simulation model includes two aspects. One...

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Application Information

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IPC IPC(8): G06F17/50
Inventor 唐勇孙驰胡安陈明汪波肖飞刘宾礼揭桂生
Owner NAVAL UNIV OF ENG PLA
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