The invention relates to the field of power semiconductors, provides an IGBT device with a carrier storage layer using
diode clamping, and solves the problems that the
saturation voltage of an existing groove gate IGBT with the carrier storage layer (CSL) is high, a
short circuit safe working area is smaller, and the CSL concentration is limited. The IGBT device with the carrier storage layer using
diode clamping has the advantages that the IGBT directly integrates one or more series diodes on the surface of a
silicon wafer through a groove gate IGBT process for clamping
electric potential ofan
electric field shielding layer of a P region, on the basis of the groove gate IGBT process, the limitation of the CSL concentration is broken through, the injection efficiency of an IGBT emitting
electrode is greatly improved, thereby greatly improving the tradeoff relationship between conduction
voltage drop and turn-off loss of the IGBT; due to the clamping action of a
diode, a drain
electrode near an nMOS channel of the IGBT is clamped at a lower
voltage under the
high voltage and large current, so that
saturation current of the novel IGBT is reduced to a great extent, thereby enlargingthe
short circuit safe working area of the IGBT.