298 results about "Concentration effect" patented technology

A magnetic sensing assembly for measuring magnetic field produced by a time varying electric current generated in geological formations is disclosed. The assembly comprises a soft magnetic core, a sensing coil wound on the core, and at least one miniature low noise magnetic field sensor disposed near an edge of the magnetic core. Due to strong magnetic flux concentration effect of the magnetic core the sensor facilitates very low noise magnetic measurements at a low rate of change of the magnetic field, while the sensing coil offers high sensitivity and low noise measurement at higher rates. The magnetic sensing assembly preferably comprises an earth field cancellation element. The assembly also includes an acquisition means synchronized with an electromagnetic transmitter to receive and process signals from sensing coil and from magnetic field sensor.

The invention relates to UV (Ultra Violet) offset printing carrier oil, connection UV offset printing gloss oil and preparation methods thereof. The offset printing ink comprises UV offset printing carrier oil and connection UV offset printing gloss oil, wherein the UV offset printing carrier oil is prepared from a polyester acrylate oligomer, filling, a reactive diluent, a high-viscosity additive, and the like by firstly adding a dispersant and resin, grinding the filling to a qualified degree of fineness and then adding the active diluent, a photoinitiator and the high-viscosity additive to stir and disperse together at a high speed, the connection UV offset printing gloss oil is prepared from a high-functional urethane acrylate oligomer, a dual-functional urethane acrylate oligomer, a photoinitiator, a leveling agent, and the like by stirring at a high speed, filtering, and the like. The offset printing ink and the method enable a printed product to generate the special concentration effect so as to obtain various special surface printing effects.

A slot fed microstrip antenna (100) provides improved efficiency through enhanced coupling of electromagnetic energy between the feed line (117) and the slot (106). The dielectric layer (105) between the feed line (117) and the slot (106) includes magnetic particles (114), the magnetic particles (114) preferably included in the dielectric junction region (113) between the microstrip feed line (117) and the slot (106). A high dielectric region is preferably also provided in the junction constant to further enhance the field concentration effect. The slot antenna (100) can be embodied as a microstrip patch antenna (200).

The present invention is directed to the use of honey in medical dressings. Preferred embodiments modify honey with a viscosity increasing agent, resulting in a range of possible compositions including ointments and salves, self-adhesive gels such as for use on mouth ulcers and pustules, and pliable or flexible sheets which can be used as a wound covering. Preferred viscosity increasing agents include both particulate and continuous gels, respective examples of each including agars and alginates. Selected honeys preferably, but not necessarily, exhibit antibacterial properties other than what is merely conferred by osmolarity and sugar concentration effects.

The invention provides a Schottky diode and a manufacturing method of the Schottky diode. The Schottky diode has the advantages that due to the fact that a groove structure with the wide upper portion and the narrow lower portion is mainly formed in a semiconductor layer, the concentration of two-dimensional electron gas below the Schottky metal inclined groove face can be effectively modulated, the Schottky barrier width and the Schottky barrier height can be increased, and therefore reverse electric leakage can be reduced; meanwhile, the concentration effect of an electric field at the edge of a groove can be further effectively improved, and the breakdown voltage of a device can be increased.

The invention discloses a vibrio qinghaiensis Q67 based long-term microplate toxicity analyzing method of environmental pollutants. The long-term microplate toxicity analyzing method is established by using the vibrio qinghaiensis Q67 as a tested organism and introducing time factors into the toxicity concentration-effect relationship of the traditional compound on the basis of a microplate toxicity analyzing method. The vibrio qinghaiensis Q67 based long-term microplate toxicity analyzing method of the environmental pollutants is characterized by adopting a specific microplate design and sampling scheme and a microplate culture medium suitable for the growth of the vibrio qinghaiensis Q67, measuring the long-term toxicity effect of the environmental pollutants on the vibrio qinghaiensis Q67 and repeatedly measures the toxicity of the same pollutant through multiple plates to ensure the statistical significance of an experimental result. By measuring the long-term toxicity of a part of the environmental pollutants on the vibrio qinghaiensis Q67, compared with short-term toxicity, the long-term toxicity of the tested environmental pollutants is discovered to be obviously higher than the short-term toxicity of the tested environmental pollutants, wherein the difference of the long-term toxicity and the short-term toxicity of antibiotics is most significant. The invention can actually reflect the toxicity of a site compound having specific action on compounds and more reasonably evaluate the toxicity of the pollutants.

An apparatus for printing a biomolecular droplet onto a substrate using an electric charge concentration effect includes; an electric field forming electrode including an accommodating area in which the biomolecular droplet including micro magnetic beads is accommodated and a nozzle formed on an end of the accommodating area through which the biomolecular droplet is discharged, a substrate disposed below the electric field forming electrode, including a grounded target surface onto which the biomolecular droplet discharged from the nozzle of the electric field forming electrode is deposited, a magnet disposed below the substrate which applies a magnetic force on the micro magnetic beads, and an open circuit type voltage applying unit electrically connected to the electric field forming electrode which applies a charge to the electric field forming electrode which generates an electrical force which causes the biomolecular droplet to be ejected onto the target surface of the substrate.

A robustness watermarking method plays a significant role in the field of copyright certification. A main problem to be considered in the design of the robustness watermarking method is how to improve the robustness as high as possible on the basis of ensuring excellent invisibility of a watermark. The invention designs a high-robustness dual transform domain image zero watermarking method by using an energy concentration effect of low-frequency sub-bands of a wavelet transformed image and the singular value stability of singular value decomposition. The method comprises the following steps: firstly, subjecting an original image to discrete wavelet transform; secondly, selecting a low-frequency subband for block singular value decomposition; and finally, generating a robustness watermark by judging the parity of a number in the top digit of a maximum singular value of each subblock. The method avoids any change in the original image, thereby having excellent invisibility. Compared with other overwhelming majority of robustness watermarking methods, the method has stronger anti-attack robustness. The method can realize blind copyright certification.

The invention relates to a sludge dehydration treatment technology which includes the steps as follows: residual active sludge is treated for concentration sequentially in a continuous gravity concentration tank and an intermittent sludge concentration tank, then put in a chemical conditioning tank and guided into a tumbling centrifugal concentrator for further concentration after being chemically conditioned, and finally put into a belt filter press to be dehydrated to become sludge cake. The sludge dehydration treatment technology of the invention aims at the residual active sludge property characteristics to strengthen the concentration effect before mechanical dehydration and has the advantages of little addition dosage in dehydration, sludge cake chickening, low moisture content in sludge cake, easy washing of filtration fabric not stuck by sludge, low solid content in separation medium, and high solid recovery rate.

The invention relates to a SiC junction barrier Schottky diode and a manufacturing method of the SiC junction barrier Schottky diode. The SiC junction barrier Schottky diode comprises a substrate of a first conductive type, an epitaxial layer of the first conductive type, a Schottky metal contact, a heavily doped region of a second conductive type, a light doped region of the second conductive type, a light doped trap of the second conductive type and an ohmic contact, wherein the epitaxial layer of the first conductive type is formed on the substrate, the Schottky metal contact is formed on the epitaxial layer, the heavily doped region of the second conductive type is formed below the Schottky metal contact, the light doped region of the second conductive type is formed below the heavily doped region, the light doped trap of the second conductive type is formed below the light doped region, the width of the light doped trap is smaller than that of each light doped region, and the ohmic contact is formed on the reverse side of the substrate. The SiC junction barrier Schottky diode can obviously reduce the electric field concentration effect in the corner of a PN junction, and further improves the reverse breakdown voltage of a device and a quality factor (BFOM) value of Baliga.

The invention discloses a transistor with high electronic mobility. The transistor with the high electronic mobility comprises a substrate, a channel layer, a barrier layer, a source electrode, a drain electrode, a schottky grid electrode and at least one semiconductor field limiting ring, wherein the channel layer is located on the substrate, the barrier layer is located on the channel layer, the source electrode and the drain electrode are located on the barrier layer, the schottky grid electrode is located between the source electrode and the drain electrode, and the semiconductor field limiting rings are located at the position, between the schottky grid electrode and the drain electrode, on the barrier layer. According to the transistor with the high electronic mobility, the concentration of two-dimensional electron gas on the interface between the barrier layer and the channel layer can be adjusted, the concentration effect of an electric field on a grid electrode edge can be improved effectively, and the breakdown voltage of the transistor with the high electronic mobility is increased.

The invention discloses a trench gate charge storage-type IGBT and a manufacturing method thereof, which belong to the technical field of power semiconductor devices. Through reasonably introducing asplit trench gate structure and an air floating P-type region, in a condition of not influencing the threshold voltage of the IGBT and conduction, Miller capacitance is reduced, and bad influences brought by Miller effects are improved; the overall gate capacitance is reduced, the device switching speed is improved, the switching losses of the device are reduced, and the compromise between forwardconduction voltage drop and turn-off losses of the traditional CSTBT structure is improved; current and voltage oscillations and EMI problems in the device dynamic starting process are avoided, and the device reliability is improved; electric field concentration effects at the bottom part of the trench are improved, and the breakdown voltage of the device is improved; carrier enhancement effectsat an emitter end of the device are improved, the carrier concentration distribution in a drift region is improved, and the compromise between forward condition voltage drop and turn-off losses is further improved; and besides, the manufacturing method disclosed in the invention has the advantages of low realization difficulty, high product rate and low cost.

The invention provides an amphipathic polymer, a preparation method thereof, a composite nano medicine carrier and a preparation method thereof. The composite nano medicine carrier comprises a chemical modification rare-earth up-conversion nanoparticle and an amphipathic polymer which covers the chemical modification rare-earth up-conversion nanoparticle, wherein the chemical modification is modification by mesoporous silica and alkyl chain. When the composite nano medicine carrier is radiated by near infrared ray, the near infrared ray is converted by the rare-earth up-conversion nano-particle to be high-frequency ultraviolet light, the amphipathic polymer is converted by the ultraviolet light to a hydrophilic polymer, so that the amphipathic polymer is separated from the surface of the hydrophobic chemical modification rare-earth up-conversion nano-particle, and the medicine in the mesoporous silico pores can be released; folic acid targeted groups are modified on side chains of the amphipathic polymer, so that the composite nano medicine carrier has a good concentration effect on the tumor cells with high expression to folic acid receptors, and the targeted treatment on the cancer can be realized.

The invention discloses a trench-gate charge storage type IGBT and a manufacturing method therefor, and belongs to the technical field of semiconductor power devices. A trench-gate emitter structure connected with a P-type volume region is introduced to an N-type drift region at one side of a trench gate in a conventional CSTBT device, thereby enabling the gate-collector capacitance into gate-emitter capacitance, and improving the adverse effect of Miller capacitance. A thick dielectric layer of the trench-gate emitter structure avoids an electric field concentration effect at the bottom of atrench, and improves the breakdown voltage of a device. The depth of a gate electrode is enabled to be less than the junction depth of an N-type charge storage layer, thereby reducing the overall gatecapacitance under the condition that the connection of an IGBT is not affected, improving the switching speed of the device, reducing the switching loss of the device, and improving the compromise characteristics between a positive conduction voltage and the switching-off loss. According to the invention, the existing of the P-type volume region can reduce the extraction area of a hole, and improves the carrier concentration distribution of the whole N-type drift region. Moreover, the noise impact is reduced, and the EMI effect is avoided.

The invention discloses a coffee active ingredient extracting device. The device comprises a reaction kettle body, wherein the reaction kettle body is provided with a feeding hopper, the lower end ofthe reaction kettle body is in a tapered shape, the outer wall of the lower end of the reaction kettle body is provided with a hollow heating chamber, a motor is arranged above the feeding hopper, a first stirring rod is connected to the lower end of the motor, the first agitating rod extends away from the end of the motor toward the reaction vessel body, and one end extended from the first agitating rod is sleeved with a mounting plate. The coffee active ingredient extracting device is internally provided with an agitating structure, which can stir the material, avoids material deposition onthe bottom of the device, and enhances the concentration effect, the agitating structure can drive the blade to rotate when rotating, the rotating blade can scrape off the material on the inner wall to prevent the material from sticking to the inner wall and improve the effect of the concentrated material, a crushing plate is used for crushing, so that the coffee beans can fully react, and the efficiency is improved.

The invention belongs to the technical field of a semiconductor and specifically relates to an HEMT device with a junction type semiconductor layer. The device is mainly constructed in such a way that the junction type semiconductor layer is grown on the upper surface of a barrier layer between a grid and a drain and the junction type semiconductor layer and the barrier layer form two-dimensional cavity gas (2DHG). On one hand, grid metal and the junction type semiconductor layer form a rectification structure so that leakage currents of grid-2DHG-2DEG caused when the grid is positively pressurized are avoided, and at the same time, a separating layer is employed between a drain electrode and the junction type semiconductor layer for blocking the 2DHG; and on the other hand, the 2DHG between the grid and the drain and the 2DEG form polarized super junctions, in case of a blocking state, a drift region is exhausted under assistance, the electric field concentration effect of the end, nearby the drain, of the grid of the device is effectively improved, at the same time, a new electric field peak is introduced to the contact portion between a P-type doping area and an N-type doping area, electric field distribution on the surface of the device is enabled to be more uniform, and breakdown voltage of the device at a switching-off state is improved. The HEMT device with the junction type semiconductor layer is especially suitable for an HEMT device.

A device and method for printing biomolecules on a substrate uses an electric charge concentration effect. The device overcomes limitations of the material and surface characteristics of a substrate, enables accurate dropping of a biomolecular droplet onto a target surface of the substrate, prevents electric discharge, and thus allows the manufacturing of a high density biochip by depositing numerous biomolecular droplets, which are small in size and volume, onto a substrate. The device includes: a needle-shaped electric field forming electrode; a substrate which is grounded and disposed below the electric field forming electrode, the substrate including a target surface; and an open circuit type voltage applying unit which supplies first electric charges to the electric field forming electrode to drop the biomolecular droplet onto the target surface of the substrate.

The invention discloses a concentration method of sugar solution in ethanol fermentation of cellulose. Firstly the sugar solution which is removed of suspended particles is obtained via membrane filtration, then membrane distillation technology is adopted, i.e. the sugar solution of temperature of 40 to 70 DEG C is introduced from one side of a hydrophobic membrane module, then the water in the sugar solution penetrates through the wall of microporous membrane on the hydrophobic membrane module in the vapor status, diffuses into the other side and condensates, thereby realizing the concentration of the sugar solution. Adopting the method of the invention to concentrate the sugar solution in the ethanol fermentation of cellulose has the advantages of the good concentration effect and the low energy consumption.

The invention belongs to the technical field of a semiconductor, and relates to an RESURF HEMT device with an N type floating buried layer. According to a technical scheme, a P type buffer layer and the N type floating buried layer are introduced; a RESURF effect is formed by 2DEG at the P type buffer layer and a channel so as to modulate a transverse electric field of a device; a PN junction is formed by the N type floating buried layer and the P type buffer layer; in a blocking state, internal electric field distribution in the N type floating buried layer is modulated, and an electric field concentration effect at an drain electrode end is effectively improved, without introducing an additional parasitic capacitor; and meanwhile, a new electric field peak is introduced at the left side tail end of the N type floating buried layer, so that the electric field distribution on the surface of the device can be more uniform, and the breakdown voltage of the device is improved consequently. The preparation process of the device disclosed by the invention is compatible with a conventional process.

Provided is a method for performing a Fourier transformation for generating a computer-generated holographic (CGH) image. The method includes generating first intermediate data by performing a first FFT calculation that relates to coordinates of a pupil of a user with respect to input image data; generating second intermediate data by calculating a light concentration effect correction term for correcting a light concentration effect occurring at the pupil of the user and multiplying the first intermediate data by the light concentration effect correction term; and performing a second FFT calculation that relates to the coordinates of the pupil of the user with respect to the second intermediate data.

The invention discloses a high-speed disc type dehydrator, and belongs to the field of preparation equipment. The high-speed disc type dehydrator comprises a motor, a drum cover shell, a transmission device and a drum component, wherein the drum component is positioned in the drum cover shell, and comprises a main shaft, a working disc component and a drum; the main shaft is vertically inserted in the vertical center position of the drum, and is sealed and fixedly connected with the lower end of the drum; the upper end of the drum is an opening; the working disc component is mounted in the drum; and the motor is connected with the main shaft through the transmission device. Pulp with a concentration of 5-7% can be concentrated and dehydrated by the equipment to change the concentration about 40%. In particular, after fine particles about -10 microns are treated by the equipment, overflow solid contents thereof are lower than 0.5%, so that such advantages as obvious concentration effect, high production efficiency and small floor area are achieved; and polished fine tailings can be concentrated before a floatation section, so that the tailing transport cost is reduced, and the water recycling rate is improved.

The invention discloses a silicon carbide groove MOS junction barrier Schottky diode and a manufacturing method of the silicon carbide groove MOS junction barrier Schottky diode. The problems of too low breakdown voltages, too low reliability and the like caused by the serious electric field concentration effect on the edge of a device and too high leakage currents are mainly solved. The silicon carbide groove MOS junction barrier Schottky diode and the manufacturing method are characterized in that a groove MOS structure is introduced on the basis of a traditional JBS device structure, and therefore the functions of relieving electric field concentration on a P-junction edge and lowering the leakage currents are achieved.

The invention discloses a CSTBT device and a manufacturing method thereof, which belong to the field of semiconductor power devices. A groove gate structure is together formed through introducing a groove split electrode below a gate electrode, a P-type layer is introduced below the groove split electrode, a series diode structure is arranged above the groove split electrode, and the problem of acontradictory relationship existing between the forward conduction performance of the device and the voltage-withstanding performance caused through improving the doping concentration of an N-type charge storage layer in the traditional CSTBT device is solved. The saturation current density is reduced and the short circuit safety working area of the device is improved. The gate capacitance of thedevice is reduced, the switching speed is improved, the switching loss is reduced, and the switching performance of the device is improved. The electric field concentration effects at the bottom of the groove are improved to further improve the breakdown voltage of the device. The carrier enhancement effects at the emitter end of the device are improved, the carrier concentration distribution in the whole N-drift region is improved, and the compromise characteristics between forward conduction voltage drop and turning-off losses are further optimized. Besides, the device manufacturing method is compatible with the manufacturing process of the existing CSTBT device.

The invention provides a comprehensive treatment, filtration and recovery device for mud sewage. The comprehensive treatment, filtration and recovery device comprises a sewage comprehensive filtration and sedimentation device tank body, a spiral feeding conveyer and a double spiral impeller conveying and feeding machine; the tank body comprises a water inlet, a filter cartridge, a back pressure chamber for flushing, a sealing cover, a clear water discharging hole, an access hole and a steel structure system; at the bottom of the tank body, mud is conveyed to the spiral feeding conveyor or a mud conveying pipeline at the lower side through the double spiral impeller conveying and feeding machine and is recovered. In the traditional mud conveying, a sedimentation tank is generally adopted for sedimentation, and the mud is discharged by grabbing with a crane; or the mud in a sedimentation pool is pressurized and conveyed to other users through a pipeline, a mud pump and a pipeline. Such an operating manner is complicated in process, large in occupied space, resulted in secondary pollution, high in investment and energy consumption, poor in filtrate quality, poor in mud concentration effect and difficult in treatment. According to the comprehensive treatment, filtration and recovery device provided by the invention, after all the mud is subjected to suspension, refined filtrating, dehydration and concentration, filtered clear water can be reused as reclaimed water or recycled to realize zero emission.

The invention provides a fluorine-containing sulfuric acid separation concentration method, which comprises the following steps of: providing a raw material liquid which contains sulfuric acid and hydrofluoric acid; and heating the raw material liquid at the pressure of minus 50Pa to minus 100Pa to the temperature of 110-130 DEG C to obtain concentrated sulfuric acid and mixed gases. The invention also provides a fluorine-containing sulfuric acid separation concentration device. According to the invention, when the raw material liquid containing sulfuric acid and hydrofluoric acid are heated at the pressure of minus 50Pa to minus 100Pa to the temperature of 110-130 DEG C, hydrofluoric acid and water in the raw material liquid are separated from sulfuric acid through the form of gaseous hydrogen fluoride and stream, and impurity separation and concentration of sulfuric acid can be simultaneously realized to obtain the mixed gases containing gaseous hydrogen fluoride and concentrated sulfuric acid. The separation concentration method provided by the invention can be used to separate hydrofluoric acid as an impurity from sulfuric acid and simultaneously condense dilute sulfuric acid into concentrated sulfuric acid. The method provided by the invention is simple and has a good separation concentration effect.

The invention provides a multi-step silicon carbide groove junction termination extension structure which comprises a silicon carbide substrate layer, a first semiconductor layer, a multi-step groove structure, a passivation layer, a junction termination extension structure body and an active area, wherein the first semiconductor layer is formed on the substrate layer, the multi-step groove structure is arranged on the surface of the first semiconductor layer, the passivation layer covers the upper portion of the multi-step groove structure, the junction termination extension structure body is arranged in the first semiconductor layer and positioned below the multi-step groove structure and encloses the multi-step groove structure, and the active area is arranged in the first semiconductor layer and abutted with the junction termination extension structure body. According to the extension structure, a multi-step structure is added based on a traditional plane junction termination extension structure, a P-N junction shape in the junction termination extension structure is changed, junction edge curvature is improved, a multi-peak electric field is introduced in the middle of a termination, peak electric fields at two corners of the traditional plane junction termination extension structure are relieved, electric field concentration effect of junction edges is relieved, so that reliability of the termination extension structure in reverse withstand voltage is improved.

The invention discloses a visible light catalytic sewage treatment equipment, which mainly includes a tank body and a spiral coil installed in the tank body, the spiral coil tube is fixed in the tank body by a spiral coil tube support screw, and the spiral coil tube is vertically arranged The spiral coil tube is made of transparent glass material. When the outdoor sunlight is sufficient, the present invention uses a condenser to realize the reflective gathering effect, reflects ultraviolet light and irradiates it on the spiral coil tube, thereby utilizing sunlight to realize photocatalysis In this way, the energy consumption of the ultraviolet lamp can be effectively saved, and the ultraviolet lamp can be used when the light is insufficient, and the whole can realize uninterrupted processing, and the energy consumption has been effectively reduced.