237results about How to "Reduced turn-off loss" patented technology

The invention provides a SiC MOSFET short-circuit protection circuit and method based on short-circuit current suppression. The short-circuit protection circuit comprises a logic unit, a driving unit,a short-circuit protection unit, a VDS detection unit and a VG detection unit, and short-circuit current is suppressed by adopting a method of reducing gate voltage VG, so that impact of a short-circuit fault on a device is reduced, short-circuit loss is reduced, and short-circuit tolerance time is prolonged. When a type of short circuit occurs in the SiC MOSFET, the drain voltage VDS does not drop to the conduction voltage drop, and the gate driving voltage in the switching-on transient state is selected by judging whether the drain voltage VDS drops to the conduction voltage drop or not, sothat the gate voltage VG is clamped at a relatively low driving voltage level; when the SiC MOSFETs are subjected to a second-class short circuit, the gate voltage VG will change suddenly, and then avoltage spike is formed. According to the invention, the gate driving voltage in the conduction state is selected by judging whether the gate voltage VG in the conduction state has the voltage spikeor not, so that the gate voltage VG can be clamped at a lower driving voltage level during short circuit; and, in addition, the circuit provided by the invention does not influence the normal switching-on process, and ensures the rapidity of the switching-on transient state of the SiC MOSFET.