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Three-level inverter and power supply equipment

A technology for three-level inverters and power supply equipment, applied to electrical components, converting irreversible DC power input to AC power output, and converting AC power input to DC power output, etc., which can solve the problem of low inverter conversion efficiency , IGBT total loss and other issues

Inactive Publication Date: 2013-02-27
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the total IGBT loss of this three-level inverter is large, and the conversion efficiency of the inverter is low

Method used

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  • Three-level inverter and power supply equipment
  • Three-level inverter and power supply equipment
  • Three-level inverter and power supply equipment

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] The switching speed of the power semiconductor device mainly has the following two influences on the electrical performance of the inverter: on the one hand, the faster the switching speed, the lower the switching loss and the higher the conversion efficiency of the inverter; on the other hand, the faster the switching speed Faster, the greater the voltage stress when the switch is turned off, the less reliable the switch will be. Therefore, inc...

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Abstract

The invention provides a three-level inverter and a piece of power supply equipment. The three-level inverter comprises a first IGBT (insulated gate bipolar transistor), a second IGBT, a third IGBT, a fourth IGBT, a first clamping diode and a second clamping diode, wherein the collector electrode of the first IGBT is connected to a positive direct current bus, the emitting electrode of the first IGBT is connected to a first connection point, and a first fly-wheel diode is bridged between the collector electrode and the emitting electrode; the collector electrode of the second IGBT is connected to the first connection point, the emitting diode of the second IGBT is connected to a second connection point, and a second fly-wheel diode is bridged between the collector electrode and the emitting electrode of the second IGBT; the collector electrode of the third IGBT is connected to the second connection point, the emitting electrode of the third IGBT is connected to a third connection point, and a third fly-wheel diode is bridged between the collector electrode and the emitting electrode; the collector electrode of the fourth IGBT is connected to the third connection point, the emitting electrode of the fourth IGBT is connected to a negative direct current bus, and a fourth fly-wheel diode is bridged between the collector electrode and the emitting electrode; and the turning-on / off speeds of the first IGBT and the fourth IGBT are higher than the turning-on / off speeds of the second IGBT and the third IGBT, so that the conversion efficiency of the inverter is improved.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a three-level inverter and power supply equipment. Background technique [0002] The inverter refers to a conversion device that converts the DC power of the DC voltage source into AC power by controlling the on and off of the switch tube. It is one of the Uninterruptible Power System, solar technology and wind power generation technology. important parts. At present, power semiconductor devices such as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) are usually used as switch tubes. [0003] There are many topologies of inverters, among which the diode mid-point clamped three-level inverter (hereinafter referred to as three-level inverter) is widely used because of its simple circuit topology, easy control and low cost. In a three-level inverter, each bridge arm has four switch...

Claims

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Application Information

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IPC IPC(8): H02M7/48H02M7/537
CPCH02M7/487
Inventor 陈构宜崔兆雪章陶
Owner HUAWEI TECH CO LTD
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