50results about How to "Improved reverse recovery characteristics" patented technology

The invention discloses a super-junction device. At least one of an N type column and a P type column in each super-junction unit is of a vertical three-section structure having doping concentrations;the vertical three-section structure includes a bottom section, a middle section, and a top section along a vertical direction; the doping concentration of the middle section is lower than the dopingconcentration of the bottom section; the doping concentration of the middle section is lower than the doping concentration of the top section; after the column of the vertical three-section structureis depleted, impurity ions of the middle section, the bottom section, and the top section form an electric field trap in the middle section; and the electric field trap enhances the difficulty of being extracted of residual minority carries, and therefore, the softness factor of the reverse recovery of the device can be increased. The invention also discloses a manufacturing method of the super-junction device. With the manufacturing method of the invention adopted, the reverse recovery characteristic of the body diode of the device and the output capacitance characteristic of the device canbe significantly improved, the breakdown voltage of the device can be increased, and the output capacitance characteristic of the device can be adjusted.

A fast recovery metal oxide semiconductor diode with low power consumption belongs to the technical field of semiconductor devices. The diode is provided with a junction field effect transistor region (4) and an electron accumulation layer structure (12), wherein the junction field effect transistor region (4) comprises two deep P regions (5) and an N-epitaxial layer (3) between the two deep P regions; and the electron accumulation layer structure (12) comprises two N heavily doped regions (7), the N-epitaxial layer (3), a gate oxide layer (8) on the surface of the N-epitaxial layer (3) and agate electrode (9). By utilizing the following surface electric field effect of the metal oxide semiconductor structure: a plurality of sub-accumulation layers are formed in case of forward voltage while a plurality of sub-depletion layers are formed in case of backward voltage, the diode can obtain quite low turn-on voltage drop and can simultaneously bear high reverse breakdown voltage and leakless current, thus better realizing compromise between the forward turn-on voltage drop and the backward recovery time.

The invention relates to power semiconductor technology, and relates to a super junction MOSFET with improved reverse recovery characteristics. Compared with the traditional MOSFET, the present invention introduces an insulating medium between the P-type drift region and the N-type drift region, and at the same time separates the P-type well region into the first P-type well region located on the N-type drift region and the first P-type well region located on the P-type drift region. Two parts on the second P-type well region. The first P-type well region forms a Schottky contact with the source metal. A planar N-type MOSFET is introduced in the second P-type well region, and the N+ source region of the device is connected to the drain of the planar N-type MOSFET through a floating metal. The source of the N-type MOSFET is used as the source of the device of the present invention, and its gate is connected with the gate of the device of the present invention. When the device conducts in reverse, since the Schottky diode is in a reverse bias state, the body diode on the side of the N-type drift region connected to it does not conduct, and only the body diode on the side of the P-type drift region conducts, so when the reverse conduction The charge stored in the drift region is reduced. The invention improves the reverse recovery characteristic of the device.