A Superjunction MOSFET with Improved Reverse Recovery Characteristics

A reverse recovery and characteristic technology, applied in the direction of diodes, semiconductor devices, electrical components, etc., can solve problems such as adverse effects of application systems and increased losses

Active Publication Date: 2021-06-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reverse recovery charge of the body diode of the super-junction MOSFET is much larger than that of the ordinary MOSFET, which not only increases its own loss, but also brings electromagnetic interference noise, which adversely affects the application system.

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  • A Superjunction MOSFET with Improved Reverse Recovery Characteristics
  • A Superjunction MOSFET with Improved Reverse Recovery Characteristics
  • A Superjunction MOSFET with Improved Reverse Recovery Characteristics

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Embodiment Construction

[0016] The present invention is described in detail below in conjunction with accompanying drawing

[0017] Such as figure 1 As shown, it is the super junction MOSFET with improved reverse recovery characteristics of the present invention, and the equivalent circuit diagram is as follows figure 2 shown. The source metal 15 and the first P-type well region 7 form a P-type Schottky diode, and the third insulating medium 16, the second conductive material 17, the second N+ source region 11, the second N+ drain region 10 and the P+ body contact The region 12 forms a planar MOSFET, wherein the second N+ drain region 10 is the drain, the second N+ source region 11 and the second P+ body contact region 12 are the source, and the second conductive material 17 is the gate. The gate terminal of the planar MOSFET is the gate of the device, and its second N+ drain region 10 is connected to the first floating metal through the second floating metal 18 . Compared with the conventional s...

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Abstract

The invention relates to power semiconductor technology, and relates to a super junction MOSFET with improved reverse recovery characteristics. Compared with the traditional MOSFET, the present invention introduces an insulating medium between the P-type drift region and the N-type drift region, and at the same time separates the P-type well region into the first P-type well region located on the N-type drift region and the first P-type well region located on the P-type drift region. Two parts on the second P-type well region. The first P-type well region forms a Schottky contact with the source metal. A planar N-type MOSFET is introduced in the second P-type well region, and the N+ source region of the device is connected to the drain of the planar N-type MOSFET through a floating metal. The source of the N-type MOSFET is used as the source of the device of the present invention, and its gate is connected with the gate of the device of the present invention. When the device conducts in reverse, since the Schottky diode is in a reverse bias state, the body diode on the side of the N-type drift region connected to it does not conduct, and only the body diode on the side of the P-type drift region conducts, so when the reverse conduction The charge stored in the drift region is reduced. The invention improves the reverse recovery characteristic of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, in particular to a super junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET for short) with improved reverse recovery characteristics. Background technique [0002] The trade-off relationship between breakdown voltage and specific on-resistance of super junction MOSFET is much better than that of ordinary MOSFET, so it is in a dominant position in the field of 500V-650V power switch. However, the reverse recovery charge of the body diode of the super-junction MOSFET is much larger than that of the ordinary MOSFET, which not only increases its own loss, but also brings electromagnetic interference noise, which adversely affects the application system. Contents of the invention [0003] The object of the present invention is to provide a super junction MOSFET with improved reverse recovery characteristics to solve the above problems. [0004] The technical so...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78
CPCH01L29/7806H01L29/7813
Inventor 郑崇芝吴毅夏云孙瑞泽刘超陈万军张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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