Fast recovery metal oxide semiconductor diode with low power consumption
An oxide semiconductor, low-power technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as limited application scope and easy breakdown, and achieve lower turn-off loss, good compromise, and lower conduction loss. Effect
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[0020]Adopting a low power consumption fast recovery metal oxide semiconductor diode of the present invention can realize low conduction voltage drop, high reverse breakdown voltage, good reverse recovery characteristics, and better forward conduction voltage drop and the trade-off between turn-off losses. With the development of semiconductor technology, more fast and low-power consumption devices can be produced by adopting the invention.
[0021] A low-power fast-recovery metal-oxide-semiconductor diode, such as figure 1 shown, including metallized cathode 1, N + Substrate area 2, N - Epitaxial layer 3 and metallized anode 10; said metallized cathode 1 is located at N + backside of substrate region 2, the N - The epitaxial layer 3 is located at N + Substrate region 2 front side. The low power consumption fast recovery metal oxide semiconductor diode also includes a junction field effect transistor region 4 and an electron accumulation layer structure 12; the junction ...
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