403results about How to "Improve electric field distribution" patented technology

Structures, devices and methods are provided for creating enhanced back barriers that improve the off-state breakdown and blocking characteristics in aluminum gallium nitride AlGaN / GaN high electron mobility transistors (HEMTs). In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures. By creating higher energy barriers at the back of the two-dimensional electron gas channel in the unintentionally doped GaN buffer, higher off-state breakdown voltage is advantageously provided and blocking capability is enhanced, while allowing for convenient and cost-effective post-epitaxial growth fabrication. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.

An MOS device includes a semiconductor layer comprising a substrate of a first conductivity type and a second layer of a second conductivity type formed on at least a portion of the substrate. First and second source / drain regions of the second conductivity type are formed in the second layer proximate an upper surface of the second layer, the second layer being spaced laterally from the first source / drain region. A gate is formed above the second layer proximate the upper surface of the second layer and at least partially between the first and second source / drain regions. The MOS device further includes at least one electrically conductive trench formed in the second layer between the gate and the second source / drain region, the trench being formed proximate the upper surface of the semiconductor layer and extending substantially vertically through the second layer to the substrate. The MOS device exhibits reduced HCI effects and / or improved high-frequency performance.

The invention belongs to the technical field of electrical insulating materials and particularly relates to a high-dielectric-constant silicon rubber and a preparation method thereof. The high-dielectric-constant silicon rubber is prepared from the following raw materials in part by weight: 17 to 50 parts of raw silicon rubber, 15 to 83 parts of a giant-dielectric-constant ceramic powder, 0 to 25 parts of conductive or semi-conductive powder, 0 to 15 parts of reinforcing filler, and 1 to 3 parts of ingredient. When used in a high-voltage environment, the high-dielectric-constant silicon rubber provided by the invention can optimize electric-field distribution, relieve electric field intensity concentration in a high-voltage part and reduce operation faults.

The invention relates to continuous high efficiency nano spinning solution (15), a nanofiber nonwovens manufacturing method and a manufacturing device which not only has high manufacturing efficiency but form better thickness of the nanofiber nonwovens. The manufacturing device comprises a solution supply system, a solution feeding pipe (8), a connecting mechanism and a metal roller (6); a metal strainer (10) and a fiber receiving web (11) which have the same shaft with the metal roller are sequentially arranged on the outside of the metal roller (6), an unreel roller (12) and a winding roller (13) are arranged on the fiber receiving web (11), and pores (7) are cut on the hollow metal roller (6). The manufacturing method includes the steps: (1), polymer spinning solution (15) is prepared; (2), an electric field is arranged between the metal roller (6) and metal strainer (10); (3), the metal roller (6) is revolved at a certain speed; (4) a measuring pump (4) is led to the metal roller (6) for even internal inputting; (5), the nanofiber is received. The invention is good for the scale manufacturing of static spinning.

The invention discloses a wing-borne low-scattering ultra-wideband conformal phased array based on a strong coupling effect. The whole antenna structure of the array is subjected to conformal processing, and + / -45 degree scanning in the arraying direction is realized within a broadband of 0.5-2GHz. Compared with the traditional planar ultra-wideband phased array, the phased array disclosed by theinvention has significant low-scattering characteristics inside and outside the working band of the antenna. The whole antenna structure mainly includes a coaxial feeding structure of an antenna radiation unit, a gradient line balun used for connecting an antenna radiation patch and the feeding structure, a metal ground plate which is conformal with a flight carrier, a parasitic metal block located on the metal ground plate, a conformal dielectric substrate used for supporting the radiation structure of the whole phased array, connected long-slot conformal radiation patches based on the strongcoupling effect, a conformal dielectric substrate used for supporting a resistive electromagnetic metamaterial, a circular resistive electromagnetic metamaterial with an ultra-wideband electromagnetic wave absorbing effect and parasitic slots on both sides of the antenna radiation unit.

An MOS device includes a semiconductor layer comprising a substrate of a first conductivity type and a second layer of a second conductivity type formed on at least a portion of the substrate. First and second source / drain regions of the second conductivity type are formed in the second layer proximate an upper surface of the second layer, the second layer being spaced laterally from the first source / drain region. A gate is formed above the second layer proximate the upper surface of the second layer and at least partially between the first and second source / drain regions. The MOS device further includes at least one electrically conductive trench formed in the second layer between the gate and the second source / drain region, the trench being formed proximate the upper surface of the semiconductor layer and extending substantially vertically through the second layer to the substrate. The MOS device exhibits reduced HCI effects and / or improved high-frequency performance.

A semiconductor power device having shielded gate structure in an active area and having ESD clamp diode with two poly-silicon layer process is disclosed, wherein: the shielded gate structure comprises a first poly-silicon layer to serve as a shielded electrode and a second poly-silicon layer to serve as a gate electrode, and the ESD clamp diode formed between two protruding electrodes is also formed by the first poly-silicon layer. A mask specially used to define the ESD clamp diode portion is saved.

The invention discloses an electronic control liquid crystal adjustable terahertz wave absorber based on synchronous drive of graphene / metamaterial and a preparing method of the electronic control liquid crystal adjustable terahertz wave absorber, and belongs to the technical field of terahertz optoelectronics. The absorber comprises a quartz substrate a, a liquid crystal layer and a quartz substrate b, the quartz substrate a and the quartz substrate b are combined through a glue frame to constitute a liquid crystal box, and the liquid crystal layer is arranged at the junction of the quartz substrate a and the quartz substrate b; the inner side of the quartz substrate a comprises a periodic sub-wavelength metal unit array, a porous graphene layer and a light orientation layer a from insideto outside in sequence; the inner side of the quartz substrate b comprises a metal reflection mirror and a light orientation layer b from inside to outside in sequence, and a terahertz wavelength large-double-refraction-rate liquid crystal material is injected into the liquid crystal layer. The preparing method is simple and efficient, a sub-wavelength modular construction array can be designed randomly, the prepared electronic control liquid crystal adjustable terahertz wave absorber has a high electric field distribution and liquid crystal control capability, and meanwhile, the absorber hasthe advantages that the modulating frequency band is wide, and the modulating speed is high.

The invention discloses a groove gate VDMOS device integrated with a Schottky diode and belongs to the technical field of semiconductor devices. According to the groove gate VDMOS device integrated with the Schottky diode, an additional structure composed of a piece of Schottky junction metal and a body electrode conductive material is additionally arranged on each of drift regions on the two sides of a groove gate structure of a conventional groove gate VDMOS device, the upper portion of each piece of Schottky junction metal is in contact with source electrode metal, the lower portion of each piece of Schottky junction metal is in contact with a corresponding body electrode conductive material, and the lower surface and the lateral sides of the each piece Schottky junction metal are in contact with a corresponding drift region to form a Schottky junction; dielectric layers are arranged between the lateral sides of each body electrode conductive material and a corresponding drift region and between the bottom surface of each body electrode conductive material and the corresponding drift region. Compared with a traditional groove gate VDMOS device with the same size, the groove gate VDMOS device integrated with the Schottky diode has the advantages that due to the fact that higher drift region dosage concentration is adopted under the condition of same puncture voltage, turn-on resistance is reduced obviously, and the reverse recovery property of the diode is improved obviously.

The invention belongs to the technical field of power semiconductor devices and provides a bidirectional IGBT device and manufacturing method thereof. The cellular structure of the bidirectional IGBT device comprises two MOS structures symmetrically arranged on the front face and the back face of a substrate drift region, N-shaped buried layers are arranged between P-shaped body areas of the MOS structures and the substrate drift region, and P-shaped buried layers are arranged between the bottom of grid structures of MOS structures and the substrate drift region. The bidirectional IGBT device can be formed by respectively manufacturing two silicon wafers and bonding the silicon wafers, and also can be formed by processing the double faces of a single wafer. According to the bidirectional IGBT device and manufacturing method of the bidirectional IGBT device, an IGBT has good symmetrical positive and reverse characteristics and has a thinner drift region thickness, better carrier concentration distribution and electric field distribution under the same device withstand voltage, so that the device obtains the trade-off of a better positive conductive characteristic, a positive conductive characteristic and a turn-off loss characteristic.

The invention discloses a bandwidth adjustable liquid crystal terahertz wave plate based on a porous graphene transparent electrode. Sub-wavelength metal wire gratings are arranged on the inner side of a substrate of an incidence surface, porous graphene is arranged on the inner side of a substrate on an exit surface, and the two substrates made of fused quartz are sealed and combined to form a liquid crystal box. Two light-control orientation layers are sandwiched between the metal wire gratings and the porous graphene in the liquid crystal box, liquid crystal materials are sandwiched between the two light-control orientation layers, and the liquid crystal materials are terahertz electronic control large birefringence liquid crystal materials. Parallel orientation of liquid crystals is achieved in the liquid crystal box through the mode of light-control orientation, and a 45-degree included angle is formed between the orientation direction and the direction of the metal wire gratings. According to the bandwidth adjustable liquid crystal terahertz wave plate based on the porous graphene transparent electrode, the electronic control birefringence characteristic of the liquid crystals is used, phase delay of ordinary light and extraordinary light is regulated through voltage to correspond to specific wave plates with different frequencies, and the bandwidth adjustable liquid crystal terahertz wave plate has the advantages of being superwide in frequency band, capable of achieving automatic polarization, high in transmittance, large in modulation amount, rapid in response and the like and can be widely applied in the booming terahertz field.

The invention provides a method for improving the pollution flicker-resisting capability of a DC voltage transformer. The method is characterized in that: the internal structure of a hollow insulator of the DC voltage transformer is designed into two coaxial chambers so as to form the heating elements of the DC voltage transformer, namely the resistance elements of a resistance capacitance divider are all arranged in one coaxial chamber, so that the heat generated by the heating elements rises to the top together with an insulating medium, flows downwards from the top of the other coaxial chamber, and forms a fluid-insulating medium circulation loop finally according to a principle that hot air rises. In the method for improving the pollution flicker-resisting capability of the DC voltage transformer, the internal structure of the hollow insulator is designed into the two coaxial chambers, and air pressure difference is generated in the upper and lower parts of each chamber, so that the insulating medium circulates up and down, the temperature gradient of the upper end and the lower end in the insulator is reduced, and the aim of balancing the internal temperature is fulfilled; therefore, the aim of improving the pollution flicker-resisting capability of the DC voltage transformer is fulfilled.

The invention discloses a source-field-plate heterojunction field-effect transistor and a manufacturing method, and mainly solves the problems of low breakdown voltage and low power gain in the conventional field-plate technology. The source-field-plate heterojunction field-effect transistor comprises a substrate (1), a transition layer (2), a potential barrier layer (3), a source electrode (4), a drain electrode (5), a passivating layer (6), a Gamma-shaped grid (8) and a protective layer (11), wherein the passivating layer (6) is provided with a groove (7); a part of the Gamma-shaped grid (8) is positioned in the groove (7), and the other part of the Gamma-shaped grid (8) is positioned at the upper part of the passivating layer (6); the passivating layer (6) between the Gamma-shaped grid (8) and the drain electrode (5) is provided with a source field plate (9) and n floating metal field plates (10); the source field plate (9) is connected with the source electrode (4); the floating metal field plates are same in length, and the distances among the field plates are same; and the Gamma-shaped grid (8), the source field plate (9) and the n floating metal field plates (10) are manufactured by using a same metal deposition process so as to form the source-field-plate heterojunction field-effect transistor. The source-field-plate heterojunction field-effect transistor and the method have the advantages of high breakdown voltage, little grid-drain feedback capacitance, high power grain and simpleness for process, and is applicable to high-frequency and large-power III-V compound microwave power devices.

The invention discloses a special insulating material for electrical equipment and a preparation method for the special insulating material. The special insulating material for the electrical equipment comprises the following components in parts by weight: 90-100 parts of epoxy resin, 15-25 parts of methyl vinyl silicone rubber, 20-25 parts of fluorosilicon resin, 15-20 parts of polytetrafluoroethylene, 10-15 parts of glass fiber, 15-20 parts of nano inorganic powders, 0.2-1 part of butyl titanate, 20-40 parts of distilled water, 1-6 parts of a compatilizer, 1-5 parts of a flame retardant, 0.3-1.2 parts of an antioxidant and 1-10 parts of a crosslinking agent. The special insulating material for the electrical equipment prepared by the invention can inhibit the space charge accumulation in the cable insulating material, improve the anti-aging property, the anti-flashover property and the anti-acidic and alkaline water-resistent property of the material, has good mechanical properties, electrical property and thermal property, and is excellent in comprehensive properties.

The invention belongs to the technical field of electrical equipment and particularly relates to an extra-high-voltage heat-resistant insulating material and a preparation method thereof. The extra-high-voltage heat-resistant insulating material comprises components in parts by weight as follows: 80-100 parts of epoxy resin, 15-30 parts of polytetrafluoroethylene, 2-6 parts of nano-silica, 0.1-1 part of butyl titanate, 10-50 parts of distilled water, 2-10 parts of a mixture of nano silicon carbide, nano boron nitride and nano titanium dioxide, 5-15 parts of a diluent, 2-5 parts of a compatilizer, 0.2-2 parts of an antioxidant and 2-8 parts of a cross-linking agent. The prepared extra-high-voltage heat-resistant insulating material can effectively inhibit space charge accumulation in cable insulation materials and has good mechanical properties, electrical properties, thermal properties and physical properties and excellent comprehensive properties.

The invention discloses a preparation method of polyimide / CCTO@Ag nanoparticle composite material with high dielectric and low loss. According to the method, polyimide is used as matrix, the prepared CCTO@Ag nanoparticles are ultrasonically dispersed in absolute ethyl alcohol, then is blended with polyimide monomer in solvent, then in situ polymerization reaction is carried out on the monomer at room temperature to simultaneously realize copolymerization of polyimide and intercalation recombination with the CCTO@Ag nanoparticles, obtained stock solution is subjected to gradient annealing according to a coating method to finally obtain the polyimide / CCTO@Ag nanoparticle composite film. Compared with pure polyimide, the polyimide / CCTO@Ag nanoparticle composite material prepared according to the preparation method has the dielectric constant (103) increased by 30 times, also has low dielectric loss (0.006) and can be widely applied in fields of high energy storage capacitors, artificial organs, high speed integrated circuits, and the like.

The invention discloses a reflection type electronic control adjustable terahertz liquid crystal wave plate based on a subwavelength metal wire grating. The wave plate comprises two pieces of melting quartz baseplates, wherein the subwavelength metal wire grating is arranged on the inner side of one piece of melting quartz baseplates, a metal reflection mirror is arranged on the inner side of the other piece of melting quartz baseplates, and a liquid crystal box is formed by the two pieces of melting quartz baseplates which are combined through frame glue; two-layer light control aligning layers are arranged on the subwavelength metal wire grating and the metal reflection mirror in the liquid crystal box respectively, liquid materials are arranged in the middle of the two-layer light control aligning layers, and the liquid materials are terahertz electronic control large double refractive index liquid crystal materials; parallel orientation of liquid crystals is achieved by the liquid crystal box through a light control orientation mode, and a 90-degree angle is formed between the orientation direction and the metal wire grating direction. The invention further discloses a preparing method of the reflection type electronic control adjustable terahertz liquid crystal wave plate based on the subwavelength metal wire grating; the reflection type electronic control adjustable terahertz liquid crystal wave plate has the advantages of super-wide frequency band, large modulated quantity and quick response, and can be applied to THz wave polarization transition, THz wavefront regulation and THz vector light beams.

The invention discloses a broadband-adjustable terahertz wave plate component which comprises two quartz substrates, metal wire gratings are arranged inside the quartz substrates, the metal wire gratings on two sides are parallel to each other, and the two quartz substrates form a liquid crystal box through frame glue. The liquid crystal box comprises an optical control orientation layer and a liquid crystal material. Liquid crystal is an electric control large birefringence liquid material. The optical control orientation layer and the liquid crystal material of the liquid crystal box achieve parallel orientation of the liquid crystal through an optical control orientation method, the orientation direction of the optical control orientation layer and the direction of the metal wire gratings form a 45-degree angle, and the liquid crystal box can achieve an adjustable one quarter or a half wave plate in a terahertz frequency range. The broadband-adjustable terahertz wave plate has the advantages of being wide in frequency range, self-polarization, high in transmittance, large in modulation quantity, fast in response and the like. In addition, the manufacture cost is low, efficiency is high, the broadband-adjustable terahertz wave plate can be produced in massive mode, and the application prospects are wide.

A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A Schottky barrier electrode is connected to the tops of the mesas and the tops of the polysilicon fillers. Further oxide spacers may be formed in the length of the polysilicon fillers.

The invention relates to a directly-operated three-station disconnecting switch and a gas-insulated switchgear. The directly-operated three-station disconnecting switch comprises a working contact seat, a static contact seat, a ground contact seat and a moving contact. An insulating sleeve is arranged between the static contact seat and the ground contact seat to realize integrated connection, so that coaxiality between the ground contact seat and the static contact seat is high. The moving contact can rotate smoothly between the ground contact seat and the static contact seat, thereby guaranteeing normal usage of the switch. The static contact seat and a conductor are connected by hoop type conductive clamps; and the contact resistance of the contact part is low and the flow capacity is high. High-voltage insulating shielding covers are arranged on the working contact seat and the static contact seat, so that the electric field distribution between fractures is optimized and the insulation performance between fractures is improved. The distance between the fractures is shortened and thus the whole size of the switchgear is reduced, so that the materials are saved. A technical problem that the moving contact can not be opened or closed normally under the extreme conditions due to poor coaxiality between the moving contact and the ground contact seat and the static contact seat during turning on and off of the three-station switch in the prior art can be solved.

The invention provides a method for manufacturing a photoconductive switch high in withstand voltage and low in on resistance, comprising the steps of: providing a semi-insulating substrate, and forming a transparent electrode layer on the semi-insulating substrate; applying a photoresist layer on the transparent electrode layer through spin coating, patterning the transparent electrode layer and forming transparent electrodes at the left and right two ends of the semi-insulating substrate, respectively; applying second photoresist layers on the semi-insulating substrate and the transparent electrode through spin coating, patterning the second photoresist layer and exposing the region for forming a metal electrode; forming the metal electrode which is in contact with the transparent electrodes, respectively, and isolated from the semi-insulating substrate; and removing the second photoresist layers. Accordingly, the invention also provides a photoconductive switch high in withstand voltage and low in on resistance. The method provided by the invention is capable of improving the current density capacity of the switch and reducing the field intensity concentration while guaranteeing a certain electrode spacing, so that the photoconductive switch has low on resistance and high withstand voltage property at the same time.

An arc extinguishing chamber of a 40.5kV SF6 circuit breaker includes an upper connection terminal and a lower connection terminal closely installed on the up and down ends of a porcelain set, a static contactor device connected with the upper connection terminal and a dynamic contactor device connected with the lower terminal in the set, in which, a static arc contactor in the static contactor device and a dynamic arc contactor in the dynamic device are matched radially in gaps characterizing that the inner diameter of the static arc contactor is matched with the outer diameter of the dynamic arc contactor in gaps, the outer diameter of the static arc contactor is 35-41mm, the arc chamfer radius of the end of the static arc contactor is 2.75mm so as to improve distribution of electric fields.

The invention discloses a manufacturing method of a semiconductor device. The method comprises the steps of sequentially forming a semiconductor layer, a silicon additional layer and a photolithographic mask layer on a substrate; etching the partial area of the silicon additional layer, thus forming an oblique section along a crystal plane of silicon (111) and forming a trapezoid groove together with a crystal plane of silicon (100), which is not etched, till the semiconductor layer is exposed; and finally, depositing metal in the groove, thus forming an electrode. The semiconductor device manufactured by the method disclosed by the invention has the advantages that the structure and the shape of the electrode are controlled and optimized by virtue of the characteristic of anisotropism of the silicon additional layer in the etching process and the electric field distribution of the semiconductor layer can be improved, so that the breakdown voltage of the device is increased; in the meantime, the electrode size of the device can be effectively reduced, and the frequency characteristic and the like of the device can be further improved.

The invention provides an SOI-LIGBT device capable of suppressing a Snapback phenomenon and a manufacturing method thereof. The cellular structure of the SOI-LIGBT device comprises a substrate, a buried oxygen layer, a thick dielectric layer, a thick silicon layer drift region, a P well region, a P-type heavily doped emitter region, a first N-type heavily doped region, a N-type buffer region, a P-type heavily doped collector region, a second N-type heavily doped region, a collector dielectric barrier layer, a collector contact electrode, a ultrathin top layer silicon drift region, a P emitter contact electrode, a gate oxide layer, a polysilicon gate, P strips, and N strips. The N strips and the P strips are alternately arranged in the thick silicon layer drift region in the Z direction. The ultrathin top layer silicon drift region enhances the buried layer electric field to improve the longitudinal breakdown voltage of the SOI device. The thick silicon layer drift region reduces the specific on-resistance of the device. Lateral linear variable doping is performed on the ultrathin top layer silicon drift region and the thick silicon layer drift region to adjust the surface electric field distribution so that the specific on-resistance is greatly reduced while the high breakdown voltage of the device is maintained.

The invention relates to high-pressure large-current dry compressed air insulated metal closed switch equipment, solving the problems of environment pollution and poor heat dissipation property when SF6 gas is used as an insulation medium. The switch equipment is characterized in that an upper seal plate, a left seal plate, a right seal plate and a back seal plate of a gas tank are provided with radiating fins; a three-station switch is connected with a solid sealed pole post through a copper connecting piece; a copper connecting radiating fin is installed outside the copper connecting piece; a radiating through hole is processed on the outlet end of the moving contact of the solid sealed pole post; the front part of the epoxy resin insulation shell of the solid sealed pole post is provided with a convection notch; an anti-cracking gap is reserved between the epoxy resin shell and the static contact end outlet seat of the solid sealed pole post; and a U-shaped radiating bus is mounted at the tail end of the solid sealed pole post. The equipment disclosed by the invention has the beneficial effects of improving the distribution of electric fields while realizing radiation, meeting the requirement of dry compressed air insulated metal closed equipment which takes clean and dry compressed air as an insulation medium and has the voltage of 40.5kV and current of more than 2000A and realizing energy conservation and environment protection.

The invention discloses an apparatus for growing a ceramic coating by electrolyte injection and discharge. The apparatus contains an electrolytic tank used for storing a PEO electrolyte, a nozzle used to spray the electrolyte on a sample to be treated after the electrolyte stored in the electrolytic tank is pumped in through a circulating pump, a workpiece carrying bench which is positioned below the nozzle, used to carry the sample to be treated and provided with through holes for drainage of the injected electrolyte, and an electrolyte collection tank which is used to collect the electrolyte flowed out from the through holes. The electrolyte is directed into the electrolytic tank through a drain pipe. The invention also discloses a method for growing the ceramic coating by electrolyte injection and discharge. The invention brings forward a novel PEO film forming method which is suitable for workpiece local respiring or large-area workpiece surface continuous treatment. Simultaneously, a PEO processing apparatus with a plating mode is designed. Therefore, the technology for workpiece local respiring or large-area workpiece surface continuous treatment is simple and easy to operate, and the film forming efficiency is raised.

The invention provides a power semiconductor device and a manufacturing method. A RESURF oxide layer with the thickness gradually reduced in a step mode from bottom to top is manufactured on the side wall of a groove, the distance between gate oxides is enlarged, and therefore under the premise of the same cell pitch width and the same trench width, the epitaxy concentration is doubled, the conduction resistance is effectively reduced, and the epitaxy thickness is effectively exhausted during breakdown. The structure conforms to a reasonable design rule, and the optimization of the conduction resistance is achieved simply with the simple resurf structure.

The invention discloses a super junction collector region SiGe heterojunction bipolar transistor. According to the transistor, a super junction collector region structure where n-type semiconductor columns and p-type semiconductor columns are alternately arrayed is adopted; a transverse electric field is introduced, collector region electric field distribution is improved, and then the breakdown voltage of the device is improved. According to a base region Ge component, the staircase distribution structure where gradual increase occurs from the side of an emitter junction to the side of a collector junction is adopted; a minority carrier acceleration electric field is introduced, the base region transit time is effectively shortened, and then the characteristic frequency of the device is improved. The current gain of the device and the temperature sensitivity of the characteristic frequency are improved, drift of a static working point of the device is effectively avoided, and stable work of the device is facilitated. Compared with a conventional power heterojunction bipolar transistor, the super junction collector region SiGe heterojunction bipolar transistor has the advantages that the transistor has the high breakdown voltage characteristic and the excellent frequency characteristic, the static working point of the device can not easily deviate during working and can not easily drift along with the change of the working temperature, and stable work of the device in the field of sub-terahertz power application can be achieved.

The invention discloses a high voltage pulse electric field sterilization common-field treatment chamber with adjustable electrode distance. The treatment chamber consists of two metallic hollow tubular electrodes and an insulator isolation tube, wherein the insulator isolation tube is positioned in a treatment cavity formed between the two metallic hollow tubular electrodes. The metallic hollow tubular grounding electrodes are in threaded fit with the insulator isolation tube, so that the adjustability of the electrode distance in the common-field treatment chamber is realized. The inner ports of the metallic hollow tubular electrodes in the treatment chamber are rounded, so that the strength of a peak electric field nearby the electrodes is reduced, the 'discharge' problem caused by over high local electric field in the treatment chamber is solved, and the electric field in the flowing direction of a material is distributed relatively uniformly. The treatment chamber is simple in structure, low in cost, convenient to process and convenient to disassemble and assemble; the adjustability of the electrode distance in the common-field treatment chamber is realized; and the electrode distance in the treatment chamber can be adjusted according to different application requirements, so that the electric field strength and the electric field distribution in the treatment chamber are improved.