The invention relates to an integrated temperature thin film pressure sensor, which consists of a suction pressure connecting pipe with threads and a seal ring, a sensitive component, an external circuit board, a shell and a socket connector. A sensitive elastomer is provided with a transition layer, an insulating layer, resistive layers (including a strain resistive layer and a temperature sensitive resistive layer), a welding layer and a passivation protective layer, wherein the resistive layers are connected with the external circuit board through conducting wires. The insulating layer of the sensor is formed by superimposing SiO2 and Ta2O5 or superimposing the SiO2 and Al2O3, the strain resistive layer is formed by photoetching a NiCr alloy layer, the temperature sensitive layer is formed by photoetching Ni metal, and the temperature sensitive layer not only can solve the problem of actual temperature measurement, but also can compensate the temperature sensitivity more precisely so that the pressure measurement is more accurate. The integrated temperature thin film pressure sensor adopts an ion beam sputtering process, thus the long-term stability of the sensor is good, the temperature zero drift is minimum and the comprehensive precision is high.