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Super junction power MOSFET with soft recovery diode

A body diode and soft recovery technology, applied in the direction of diodes, semiconductor devices, electrical components, etc., can solve the problems of rapid reverse recovery current change, oscillation, and affecting device reliability, etc., to improve reverse recovery characteristics and suppress electromagnetic interference The effect of safe and reliable operation of signals and devices

Active Publication Date: 2018-06-29
杰平方半导体(上海)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the parasitic body diode of the super-junction power MOSFET has two disadvantages: one is that the reverse recovery charge is large, causing high reverse recovery power consumption; will cause oscillations in the
On the one hand, the minority carrier lifetime control technology will increase the reverse leakage of the device, and on the other hand, it will affect the reliability of the device

Method used

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  • Super junction power MOSFET with soft recovery diode
  • Super junction power MOSFET with soft recovery diode
  • Super junction power MOSFET with soft recovery diode

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Embodiment Construction

[0041] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0042] As shown in the figure, the reference numerals are 01 drain electrode, 02 source electrode, 03 gate electrode, 10 source region, 11 first drift region, 12 substrate region, 13 field termination region, 14 buffer region, 15 auxiliary region, 20 source body region, 21 second drift region, 30 gate region, 40 insulating layer. The source region 10, the first drift region 11, the substrate region 12, the buffer region 14, the auxiliary region 15, the source body region 20, the second drift region 21 and the gate region 30 are all made of semiconductor materials, the drain electrode 01, the source electrode 02 and gate electrode 03 are made of metal material.

[0043] figure 1 It is a diagram of the existing semi-superjunction MOSFET cell structure, wherein the field stop region 13 is arranged on the substrate region 12, and its upper su...

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Abstract

The invention relates to super junction power MOSFET with a soft recovery diode, and belongs to the technical field of semiconductor power devices. A new pressure resisting layer is built in existingsuper junction power MOSFET, the structure of a substrate area is changed, or a buffer area and a supplementary area are added, the softness of the reverse recovery current of a parasitic diode is effectively enhanced, the reverse recovery characteristic is improved, and the specific on-resistance of a device is not increased. The enhancement of the softness of the reverse recovery current makes that the oscillation can not easily appear on the device during a switching process, electromagnetic interference signals are inhibited, and the device work is safer and more reliable. Therefore, the device with the super junction power MOSFET is more applicable to the inverter hard switching circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a super junction power MOSFET with a soft recovery body diode. Background technique [0002] Superjunction (Superjunction) power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), that is, metal-oxide-semiconductor field effect transistor, is to improve the breakdown voltage (BV) and specific on-resistance (R) of traditional power MOSFETs. ON,SP ), it puts forward the relationship between the breakdown voltage and the specific on-resistance by the R of the traditional power MOSFET ON,SP ∝BV 2.5 rewritten as R ON,SP ∝BV 1.3 , which greatly reduces the specific on-resistance of the power MOSFET and reduces the area of ​​the chip, so it is widely used in low- and medium-power power supply equipment. [0003] There is a parasitic body diode composed of source body region, drift region and substrate region in the super junction power MOSFET, which can be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7804H01L29/7813
Inventor 林智袁琦韩姝胡盛东周建林唐枋周喜川
Owner 杰平方半导体(上海)有限公司
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