Self-adaptive SOI LIGBT device
An adaptive and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing device design cost and control difficulty
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[0019] like figure 1 Shown in this example is an SOI LIGBT device integrated with a Zener diode and a collector NMOS structure.
[0020] This example works as follows:
[0021] When the new device is forward-conducting, there are channels on both sides of the control groove gate and the side of the blocking groove gate close to the emitter, which can increase the channel density of the device, and the blocking groove gate has a physical blocking effect, which can prevent storage in the drift region. The holes in the first P-well region 41 at the emitter end are quickly drawn away by the first P+ body contact region 51 and the second P+ body contact region 52, which is conducive to improving the carrier concentration and current capacity in the drift region to obtain low conduction pressure drop lead. While the collector voltage is relatively low (usually only a few volts) in the conduction state, due to the conductance modulation effect (low resistance effect), the voltage d...
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