The invention provides a groove-type Schotty power device structure and a method for manufacturing the groove-type Schotty power device structure. The groove-type Schotty power device structure comprises an N-type heavily doped substrate, an N-type slightly doped silicone epitaxial layer, at least two grooves, conductive material layers, a metal silicide layer and a positive electrode layer, wherein the N-type slightly doped silicone epitaxial layer is arranged on the surface of the N-type heavily doped substrate in a combining mode, the grooves are formed in the silicone epitaxial layer, oxide layers are formed on the surfaces of the grooves, the conductive material layers are filled into the grooves, the metal silicide layer is formed on the surface of the silicone epitaxial layer and the positive electrode layer is formed on the surface of the metal silicide layer. The positive electrode layer is composed of a TiN layer, an AlSiCu layer, a Ti layer, a TiN layer, a Ti layer, an Ni layer and an Ag layer sequentially from bottom to top in an overlapped mode, or composed of a TiN layer, an AlSi layer, a Ti layer, a TiN layer, a Ti layer, an Ni layer and an Ag layer sequentially from bottom to top in an overlapped mode, or composed of a TiN layer, an Al layer, a Ti layer, a TiN layer, a Ti layer, an Ni layer and an Ag layer sequentially from bottom to top in an overlapped mode. According to the groove-type Schotty power device structure, a Schotty junction is formed by metal silicide and slightly doped N-type silicone, the groove MOS structure is adopted to be used as a leakage protection ring of a unit Schotty structure, and the low-leakage Schotty power diode device is formed; improvement to the positive electrode structure greatly lowers the forward conductive pressure drop, and the tolerance, to wave impact, of the device and the anti-static capacity of the device are improved.