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A bipolar power semiconductor device and a preparation method thereof

A technology of power devices and semiconductors, applied in the field of bipolar semiconductor power devices and their preparation, can solve the problems of raising the overall power consumption and increasing the use cost of the devices, etc.

Active Publication Date: 2018-12-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to turn off the thyristor normally in actual use, it is generally necessary to design a complex peripheral control circuit, which increases the cost of the device and also increases the overall power consumption.

Method used

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  • A bipolar power semiconductor device and a preparation method thereof
  • A bipolar power semiconductor device and a preparation method thereof
  • A bipolar power semiconductor device and a preparation method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0088] This embodiment provides a MOS control anode IGBT device, and its cell structure is as figure 2 As shown, a bipolar semiconductor power device with a MOS controlled anode includes an anode structure, a drift region structure, a cathode structure, and a control gate structure; the anode structure includes a P-type anode region 109 and a lower surface of the P-type anode region 109 The anode metal 110; the drift region structure includes an N + field stop layer 108 and an N-type drift region 107 located on the upper surface of the N + field stop layer 108, the N-type drift region 107 is located on the upper surface of the P-type anode region 109; The cathode structure includes a P-type body region 106, a P+ emitter region 105, an N+ emitter region 104, and a cathode metal 101. The P+ emitter region 105 and N+ emitter region 104 are located on the top layer of the P-type body region 106, and the upper surfaces of the two are connected to the cathode metal. 101 is in contact...

Embodiment 2

[0091] This embodiment provides a MOS control anode IGBT device, and its cell structure is as image 3 As shown, the difference from Embodiment 1 is that the thickness of the second anode trench gate dielectric layer 114 in the anode trench gate structure is greater than the thickness of the first anode trench gate dielectric layer 113, specifically, the second anode trench gate The thickness of the dielectric layer 114 is about The thickness of the first anode trench gate dielectric layer 113 is about The purpose of this design is to control the turn-on voltage of the anode trench gate while reducing the parasitic capacitance of the anode trench gate electrode, thereby reducing the adverse effect of the parasitic parameters of the anode MOS structure on the IGBT device parameters.

Embodiment 3

[0093] This embodiment provides a MOS control anode IGBT device, and its cell structure is as Figure 4 As shown, the difference from Embodiment 1 is that the N+ source region 112 in the anode MOS structure is removed and replaced with a P-type base region 111. Since the concentration of the P-type base region 111 is lower than that of the P-type anode region 109, the anode trench gate controls the side channel inversion when the device is working, thereby achieving the effect of bypassing the anode diode. At this time, the P-type anode region 109 forms an ohmic contact with the anode metal 110, and the P-type base region 111 forms a Schottky contact with the anode metal 110.

[0094] When the device is working, the Schottky junction formed by the anode metal 110 and the P-base region 111 is reverse biased. When the control gate structure forms a conductive channel, the carriers passing through the control gate structure channel are reversed in the Schottky junction. The partial ...

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Abstract

The invention relates to a bipolar power semiconductor device and a preparation method thereof, belonging to the technical field of semiconductor power devices. When the cathode structure of the conventional bipolar power semiconductor device is kept unchanged, by introducing an anode trench gate structure and a source region and / or a base region into the anode region of the device, the forward conduction voltage drop of the anode diode is bypassed by controlling the anode trench gate structure without affecting the normal operation and opening of the device, so that the effect of reducing theforward conduction voltage drop of the power semiconductor device is achieved. After the anode diode is bypassed, the minority carrier injection from the anode region to the drift region decreases, and the reverse recovery time of the device is shortened when the device is turned off, which improves the turn-off speed of the device and reduces the switching loss. The invention improves the carrier concentration distribution of the whole N-type drift region and the compromise between the positive conduction voltage drop and the switching loss. Moreover, the fabrication method of the device does not require additional process steps, and is compatible with the traditional device fabrication method.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductor devices and preparation, and specifically relates to a bipolar semiconductor power device with MOS control anode and a preparation method thereof. Background technique [0002] As a major category of electronic technology, power electronics technology (the other major category is information electronics technology) is a technology that can realize the transmission, processing, storage and control of electric energy, and is suitable for high-power power conversion and processing. This technology can change the voltage, current, frequency, and phase to meet the power requirements of the system, thereby ensuring that electrical energy is properly used. In addition, the electrical energy is processed and used through power electronic technology, which can be more economical, efficient and environmentally friendly. Power electronics technology was born in the 1950s. As a new technology, it supp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/739
CPCH01L29/0684H01L29/66325H01L29/7393
Inventor 张金平殷鹏飞罗君轶刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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