Reverse-conducting double-insulated-gate bipolar transistor

Abstract

The invention provides a semiconductor capable of improving the current rebounding phenomenon of a reverse-conducting double-insulated-gate bipolar transistor, improving the turn-off speed and improving voltage resistance. The semiconductor is structurally characterized in that a buried oxide is arranged on a P-type substrate and provided with a drift region, the drift region comprises a first N-type drift region, a first P-type drift region, a second N-type drift region and a second P-type drift region, the first N-type drift region and the first P-type drift region are arranged in an opposite-angle mode, and the second N-type drift region and the second P-type drift region are arranged in an opposite-angle mode; a P-type region is arranged in the first N-type drift region and the second P-type drift region, an N-type emitter region, a P-type collector region and cathode metal connecting the N-type emitter region with the P-type collector region are arranged in the P-type region, and a cathode gate oxide and a cathode polycrystalline silicon layer are arranged on the upper surface of the P-type region; an N-type region is arranged in the first P-type drift region and the second N-type drift region, an N-type collector region, a P-type emitter region and anode metal connecting the N-type collector region with the P-type emitter region are arranged in the N-type region, and an anode gate oxide and an anode polycrystalline silicon layer are arranged on the upper surface of the N-type region.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, in particular to a reverse-conducting double-gate insulated gate bipolar transistor, which is especially suitable for high-power integrated circuits such as variable frequency speed regulation, electric traction, variable frequency household appliances, and half-bridge drive circuits and automobile production. Background technique [0002] Insulated gate bipolar transistor IGBT is a composite power device evolved from the combination of MOS gate device structure and bipolar transistor structure. It also has the characteristics of MOS tube and bipolar transistor, and has good on-state current and switching. [0003] trade-off between losses. Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-Lateral Insulated Gate Bipolar Transistor, SOI-LIGBT) is a typical SOI-based device with easy integration, high withstand voltage, strong drive current capability, ...

AI Technical Summary

Problems solved by technology

But it also has a very serious current rebound phenomenon

When multiple LIGBT devices are connected in parallel, if there is a phenomenon of current bounce in the device, it will cause the current density of a single device to be too high and burn out, which is not conducive to the practical application of LIGBT devices

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