The invention discloses a 4H-SiC
Schottky barrier source / drain
MOSFET device with field plate terminal protection and a manufacturing method thereof. The manufacturing method includes the steps of performing a standard cleaning process, depositing field area
silicon dioxide through a
field oxide LPCVD method, performing photoetching on an active area, performing HF bleaching, depositing
polycrystalline silicon through a standard LPCVD
polycrystalline silicon deposition process,
doping the
polycrystalline silicon, injecting
phosphorus ions,
etching the polycrystalline
silicon,
etching plasmas, sacrificing an oxidized sample 1, performing
ion injection annealing, performing 1050 DEG C N2
atmosphere annealing, corroding and sacrificing an oxidation layer sample 1, performing HF bleaching, performing the standard cleaning process to form
gate oxide and a side wall, performing annealing to 1050 DEG after oxidization, performing N2
atmosphere annealing, performing photoetching on a source / drain contact area, performing HF bleaching, performing photoetching on a
metal lead to form 150nm
metal electrode evaporation Ti, performing peeling, performing
alloy annealing, and performing 700 DEG C N2
atmosphere annealing, wherein the device comprises a substrate and an epitaxial layer. According to the 4H-SiC
Schottky barrier source / drain
MOSFET device with field plate terminal protection and the manufacturing method of the 4H-SiC
Schottky barrier source / drain
MOSFET device with field plate terminal protection, the problem that
transconductance and conductance resistance output characteristics of the device become poor due to the fact that 4H-SiC MOSFET is too low in inversion layer mobility ratio is better solved.