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SOI LIGBT device integrated with Zener diode

A Zener diode, integrated Zener technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting device turn-on characteristics, etc.

Active Publication Date: 2020-10-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the floating P-well region structure at the emitter end can enhance the carrier storage effect of LIGBT, but during the turn-on process, the displacement current caused by the holes accumulated in the floating P-region charges the gate capacitance, which seriously affects the turn-on characteristics of the device.

Method used

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  • SOI LIGBT device integrated with Zener diode
  • SOI LIGBT device integrated with Zener diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Such as figure 1 As shown, compared with the traditional device structure, the groove-gate SOI LIGBT with integrated Zener diode in this example has a Zener diode integrated in the P well region 4 near the N-type drift region 3 .

[0019] This example works as follows:

[0020] In the forward conduction, the emitter end blocks the slot gate and the control slot gate acts as a physical barrier, which is beneficial to increase the carrier concentration in the drift region, and at the same time, there are channels on both sides of the control slot gate and the side of the blocking slot gate close to the emitter exists, the channel density of the device can be increased to reduce the resistance of the channel region, and under the combined effect of the device V on can be significantly reduced. As the anode voltage rises, the Zener diode breaks down, so that the potential at the P-well region 4 is clamped, thereby reducing the Miller capacitance; at the same time, the bre...

Embodiment 2

[0024] Such as figure 2 Shown, in this example and embodiment 1 figure 1 The difference is that, in this example, a P-type buried layer 15 is introduced into the upper surface of the N-type drift region 3 to be in contact with the side of the P-type well region 4 . The working mechanism of the device in this embodiment differs from that in Embodiment 1 in that: the introduced P-type buried layer 15 and the N-type drift region 3 are mutually depleted to form a structure similar to a super junction (SJ). In the forward blocking state, the P-type buried layer 15 introduced in this example can deplete each other with the depleted N-type drift region 3, thereby optimizing the withstand voltage of the device. At the same time, when the device is turned off, the P-type buried layer 15 and the N-type drift region 3 extract holes and electrons from each other, which can accelerate the depletion of the device, thereby further reducing the turn-off time and the turn-off loss.

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Abstract

The invention belongs to the technical field of power semiconductors, and particularly relates to an SOI LIGBT device integrated with a Zener diode. Compared with a traditional LIGBT, the Zener diodeis introduced into a P well region at an emitter end of a new device, the P-type region of the Zener diode is electrically connected with the emitter of the device, and the N-type region of the Zenerdiode is electrically connected with the P well region through floating ohmic metal. When the voltage of a collector electrode is continuously increased, the Zener diode is reversely broken down and conducted, so that the potential of the P well region is clamped, the gate capacitance of the device can be reduced, the saturation current can be reduced to improve the short-circuit capability of thedevice when the device is conducted, and a hole extraction path can be provided in the turn-off process to reduce the turn-off time and the turn-off loss. Compared with a traditional LIGBT structure,the novel LIGBT structure provided by the invention has the advantages that a better compromise relationship between conduction voltage drop and turn-off loss is obtained, and the short-circuit resistance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a slot-gate SOIL IGBT with internally integrated Zener diodes. Background technique [0002] SOI-based lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT) is a typical representative of bipolar devices. Due to its high input impedance, low conduction voltage drop, high withstand voltage characteristics, dielectric isolation and other characteristics, it is widely used in various power electronic systems and has become a key semiconductor device in the field of medium and high voltage switch applications. [0003] When the LIGBT device is conducting forward, conductance modulation effect occurs in the drift region and has a small turn-on voltage drop, but at the same time, it needs to extract a large number of carriers stored in the drift region when it is turned off, resulting in a large turn-off of the device. lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0623H01L29/7394
Inventor 魏杰马臻郗路凡罗小蓉张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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