182 results about "Displacement current" patented technology

In a non-volatile memory, the displacement current generated in non-selected word lines that results when the voltage levels on an array's bit lines are changed can result in disturbs. Techniques for reducing these currents are presented. In a first aspect, the number of cells being simultaneously programmed on a word line is reduced. In a non-volatile memory where an array of memory cells is composed of a number of units, and the units are combined into planes that share common word lines, the simultaneous programming of units within the same plane is avoided. Multiple units may be programmed in parallel, but these are arranged to be in separate planes. This is done by selecting the number of units to be programmed in parallel and their order such that all the units programmed together are from distinct planes, by comparing the units to be programmed to see if any are from the same plane, or a combination of these. In a second, complementary aspect, the rate at which the voltage levels on the bit lines are changed is adjustable. By monitoring the frequency of disturbs, or based upon the device's application, the rate at which the bit line drivers change the bit line voltage can be adjusted. This can be implemented by setting the rate externally, or by the controller based upon device performance and the amount of data error being generated.

In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Methods and systems are described for efficiently detecting an object. The system includes at least one electrode for measuring a displacement current. The at least one electrode is coupled to a floating ground configuration provided by an op-amp, where the inverting node of the op-amp is coupled to electrode and the non-inverting node is coupled to a signal generator. The system may include a single capacitance sensor for detecting an object. Systems may include a plurality of capacitance sensors in an array configuration for detecting an object.

A local coil unit for a magnetic resonance apparatus, which radiates a radio-frequency field into an examination subject, has a housing and at least a part of the housing is formed of an insulating dielectric material that passively compensates for an inhomogeneity in the high-frequency field in the subject. The material has a relative dielectric value εr of greater than 50, preferably greater than 100, and a dielectric loss factor tan δ of less than 2.5×10−2, preferably less than 1×10−3. In the dielectric material displacement currents are generated which create an additional magnetic field that compensates for the minima in the B1 field as a result of the eddy currents arising in the patient due to the radio-frequency radiation.

The invention provides a critical displacement forecasting and early warning method based on a slope deformation failure mechanism. On the basis of the deformation relationship between the push type slope stable deformation mechanism, critical block division and rock and earth mass mechanical properties and a sliding surface and on the basis of analysis of evolutionary characteristics of different points of the sliding surface, a sliding surface displacement deciding method based on calculation of a displacement current situation stability coefficient and based on side slope surface displacement is put forward, and therefore forecasting and early warning are achieved. The critical displacement forecasting and early warning method has the advantages that deformation values of different points on the sliding surface, the slope and the slope surface can be determined when the slope is damaged; process description of slope gradual failure deformation and force can be achieved; through combination with a current slope monitoring value, stability of the slope under different deformation conditions can be analyzed, and the stability coefficient of the slope can be calculated; through combination with the deformation history, durability evaluation can be implemented for the slope protection measures.