The invention discloses a universal memory device simulator. The universal memory device simulator is characterized by comprising a voltage-control floating ground impedance conversion module and a current integration module; the voltage-control floating ground impedance conversion module is used for implementing linear voltage-control resistance, voltage-control capacitance and voltage-control inductance, the current integration module is used for implementing current integration operation, the voltage-control floating ground impedance conversion module comprises a first current feedback operational amplifier, a second current feedback operational amplifier, a third current feedback operational amplifier, a fourth current feedback operational amplifier, a field-effect transistor, a first resistor, a second resistor, a first impedance component and a second impedance component, and the current integration module comprises a fifth current feedback operational amplifier, a capacitor and a direct-current voltage source. The universal memory device simulator has the advantages that the impedance components with different properties can access the universal memory device simulator under the conditions that circuit topological structures are unchanged, accordingly, memristor, memcapacitor and meminductor can be respectively implemented, and the integral universal memory device simulator can be implemented by the aid of only few devices and is simple in structure, low in production cost and wide in application range.