Semiconductor device
A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient increase of dummy trenches, increase of constant loss of on-voltage, etc., to improve short-circuit tolerance and reduce effective gate. Width, the effect of realizing miniaturization
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[0049] First, use Figure 1 to Figure 6 The structure of the semiconductor device of this embodiment will be described.
[0050] First, refer to figure 1 , in a plan view of the semiconductor chip 100 , the IGBT formation region 40 is formed in the center of the semiconductor chip 100 , and an edge termination region 41 is arranged around the IGBT formation region 40 . A plurality of emitter electrodes 11 are formed in the IGBT formation region 40 .
[0051] main reference figure 2 and image 3 , the semiconductor device is a trench gate IGBT formed on a semiconductor substrate 1 having a thickness of, for example, 40 μm to 700 μm. The semiconductor substrate 1 has a first main surface (upper surface) 1A and a second main surface (lower surface) 1B facing each other. The silicon substrate as the semiconductor substrate 1 has, for example, an impurity concentration of approximately 1×10 12 ~1×10 16 cm -3 the n - area (n - Drift region) 1c (1st region).
[0052] in t...
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