Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of insufficient increase of dummy trenches, increase of constant loss of on-voltage, etc., to improve short-circuit tolerance and reduce effective gate. Width, the effect of realizing miniaturization

Active Publication Date: 2015-04-08
MITSUBISHI ELECTRIC CORP
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Problems solved by technology

[0012] In the above-mentioned conventional example, in order to suppress oscillation when a short circuit occurs in a high withstand voltage semiconductor device such as a trench gate IGBT, if the number of dummy trenches (hereinafter also referred to as stabilizing plates or trenches for stabilizing plates) is gradually increased, ratio, the conduction voltage (Vce(sat)) and constant loss will increase, so there is a problem that the dummy trench cannot be increased sufficiently

Method used

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  • Semiconductor device
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Embodiment approach 1

[0049] First, use Figure 1 to Figure 6 The structure of the semiconductor device of this embodiment will be described.

[0050] First, refer to figure 1 , in a plan view of the semiconductor chip 100 , the IGBT formation region 40 is formed in the center of the semiconductor chip 100 , and an edge termination region 41 is arranged around the IGBT formation region 40 . A plurality of emitter electrodes 11 are formed in the IGBT formation region 40 .

[0051] main reference figure 2 and image 3 , the semiconductor device is a trench gate IGBT formed on a semiconductor substrate 1 having a thickness of, for example, 40 μm to 700 μm. The semiconductor substrate 1 has a first main surface (upper surface) 1A and a second main surface (lower surface) 1B facing each other. The silicon substrate as the semiconductor substrate 1 has, for example, an impurity concentration of approximately 1×10 12 ~1×10 16 cm -3 the n - area (n - Drift region) 1c (1st region).

[0052] in t...

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Abstract

A stabilizing plate portion is formed in a region of a first main surface lying between first and second insulated gate field effect transistor portions. The stabilizing plate portion includes a first stabilizing plate arranged closest to the first insulated gate field effect transistor portion and a second stabilizing plate arranged closest to the second insulated gate field effect transistor portion. An emitter electrode is electrically connected to an emitter region of each of the first and second insulated gate field effect transistor portions, electrically connected to each of the first and second stabilizing plates, and arranged on the entire first main surface lying between the first and second stabilizing plates, with an insulating layer being interposed.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular, to a semiconductor device including at least two insulated gate field effect transistor portions for passing a main current between opposing main surfaces of a semiconductor substrate. Background technique [0002] In the field of high-voltage semiconductor devices that control voltages exceeding several hundred V, since the currents to be handled are also large, element characteristics that can suppress heat generation or loss are required. In addition, as a gate drive method for controlling these voltages and currents, a voltage drive element with a small drive circuit scale and a correspondingly small loss is desired. [0003] For the above reasons, currently in this field, an IGBT (Insulated Gate Bipolar Transistor), which is an insulated gate bipolar transistor, is the mainstream as an element that can be driven by a voltage and has a small loss. The IGBT has a structure ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/423
CPCH01L29/7397H01L29/0696H01L29/4236H01L29/0619H01L2224/0603H01L29/404H01L29/66325
Inventor 大宅大介中村胜光
Owner MITSUBISHI ELECTRIC CORP
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