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Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof

A charge storage and charge storage layer technology, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as increasing charge/discharge time, reducing device breakdown voltage, and increasing gate capacitance.

Active Publication Date: 2018-07-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, there are still obvious defects in the implementation of the above means: the implementation of the method (1) will increase the gate-emitter capacitance and the gate-collector capacitance, and the switching process of the IGBT is essentially charging / discharging the gate capacitance Therefore, the increase of gate capacitance will increase the charging / discharging time, which in turn will cause the switching speed to decrease
However, the size of the MOS capacitance in the device is inversely proportional to the thickness of the gate oxide layer, which will lead to a significant increase in the gate capacitance in the traditional CSTBT device. In addition, the electric field concentration effect at the bottom of the trench will also reduce the breakdown voltage of the device, resulting in The reliability of the device is poor

Method used

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  • Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof
  • Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof
  • Trench gate charge storage type IGBT (Insulated Gate Bipolar Translator) and manufacturing method thereof

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Embodiment 1

[0100] The present invention provides a trench gate charge storage type IGBT, one quarter of the cell is as Figure 4 As shown, the section along AB line and A'B' line is as follows Image 6 with Figure 7 As shown, a three-dimensional coordinate system is established with any inflection point of the quarter cell as the origin, and the bottom surface of the quarter cell intersects with the two sides of the inflection point as the x-axis and z-axis respectively, passing through the inflection point and A straight line perpendicular to the bottom surface is used as the y-axis, and the directions of the x, y, and z-axes refer to Figure 4 ;

[0101]The quarter cell includes a collector metal 14, a P-type collector region 13, an N-type drift region 9 and an emitter metal 1 stacked sequentially from bottom to top; the top layer of the N-type drift region 9 has N-type charge storage layer 6, P-type base region 5, P+ emission region 4 and N+ emission region 3; the P-type base regi...

Embodiment 2

[0105] The present invention provides a trench gate charge storage type IGBT, one quarter of the cell is as Figure 8 As shown, the section along AB line and A'B' line is as follows Figure 10 with Figure 11 As shown, a three-dimensional coordinate system is established with any inflection point of the quarter cell as the origin, and the bottom surface of the quarter cell intersects with the two sides of the inflection point as the x-axis and z-axis respectively, passing through the inflection point and A straight line perpendicular to the bottom surface is used as the y-axis, and the directions of the x, y, and z-axes refer to Figure 8 ;

[0106] Compared with Embodiment 1, the difference of this implementation is that: the first P-type layer 10 is introduced at the bottom of the shielding trench structure, and the first P-type layer 10 is connected to the shielding electrode 71 through the shielding electrode dielectric layer 72. In addition Other structures are the sam...

Embodiment 3

[0109] The present invention provides a trench gate charge storage type IGBT, one quarter of the cell is as Figure 12 As shown, the section along AB line and A'B' line is as follows Figure 14 with Figure 15 As shown, a three-dimensional coordinate system is established with any inflection point of the quarter cell as the origin, and the bottom surface of the quarter cell intersects with the two sides of the inflection point as the x-axis and z-axis respectively, passing through the inflection point and A straight line perpendicular to the bottom surface is used as the y-axis, and the directions of the x, y, and z-axes refer to Figure 12 ;

[0110] Compared with Embodiment 2, the difference of this implementation is that the shielding electrode 71 extends from one end of the device to the other along the x-axis, and the gate electrode 81 extends from one end of the device to the shielding trench dielectric layer on the side of the shielding electrode 71 along the z-axis ...

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Abstract

The invention relates to a trench gate charge storage type IGBT (Insulated Gate Bipolar Translator), and belongs to the technical field of semiconductor power devices. According to the invention, a shielding trench structure which is equipotential with emitter metal is introduced on the basis of the traditional CSTBT device structure, and the trench depth of the shielding trench structure is enabled to be greater than that of a charge storage layer so as to shield an electric field of the charge storage layer. The introduction of the shielding trench structure plays an effective charge compensation effect for the charge storage layer, thus improves restrictions imposed on withstand voltage of the device by the doping concentration and thickness of the charge storage layer, and improves thebreakdown voltage of the device, thereby being conducive to improving the compromise between forward turn-on voltage drop Vceon and turn-off loss Eoff of the device, obtaining a wider short-circuit safe working area, being conducive to reducing the saturation current density of the device at the same time, and further improving the short-circuit safe working area of the device. In addition, the trench gate charge storage type IGBT significantly reduces the grid capacitance of the device and especially reduces the grid-collector capacitance, so that the switching speed of the device is improved, and the switching loss of the device and requirements for the ability of a gate driving circuit are reduced.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, in particular to a trench gate charge storage type insulated gate bipolar transistor (CSTBT). Background technique [0002] Insulated gate bipolar transistor (IGBT), as one of the core electronic components in modern power electronic circuits, is widely used in various fields such as transportation, communication, household appliances, and aerospace. Insulated gate bipolar transistor (IGBT) is a new type of power electronic device composed of an insulated field effect transistor (MOSFET) and a bipolar junction transistor (BJT), which can be equivalent to a MOSFET driven by a bipolar junction transistor. . The IGBT combines the MOSFET structure and the working mechanism of the bipolar junction transistor. It not only has the advantages of easy driving, low input impedance, and fast switching speed of the MOSFET, but also has the advantages of large on-state current density, lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/40H01L29/423H01L21/331
CPCH01L29/40H01L29/423H01L29/66348H01L29/7397
Inventor 张金平赵倩罗君轶刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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