299results about How to "Resistance" patented technology

The present invention provides-a photoluminescent phosphor coated with a coating of oxide, the phosphor comprising (1) an inorganic phosphor chosen from (a) a metal thiogallate phosphor and (b) a metal sulfide phosphor and (2) a coating that comprises at least one layer having at least one oxides. The coated photoluminescent phosphor of the present invention is more resistant to water-induced degradation than when it is uncoated.

A power semiconductor device including a non-doped GaN channel layer, an n-type Al0.2Ga0.8N barrier layer formed on the channel layer, a p-type Al0.1Ga0.9N semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.

An object is to increase the conductivity of an electrode including active material particles and the like, which is used for a battery. Two-dimensional carbon including 1 to 10 graphenes is used as a conduction auxiliary agent, instead of a conventionally used conduction auxiliary agent extending only one-dimensionally at most, such as graphite particles, acetylene black, or carbon fibers. A conduction auxiliary agent extending two-dimensionally has higher probability of being in contact with active material particles or other conduction auxiliary agents, so that the conductivity can be improved.

An inkjet receiving medium including a substrate and having a topmost layer coated thereon at solid content of from 0.1 to 25 g / m2, wherein the topmost layer comprises from 30-70 wt % of one or more aqueous soluble salts of multivalent metal cations and at least 0.05 g / m2 of a cross-linked hydrophilic polymer binder. Improved optical density, reduced mottle and improved wet abrasion resistance are provided when the receiver is printed with an aqueous pigment-based ink. In further embodiments, the topmost layer may further comprise a latex dispersion for improved image durability.

A power semiconductor device including a non-doped GaN channel layer, an n-type Al0.2Ga0.8N barrier layer formed on the channel layer, a p-type Al0.1Ga0.9N semiconductor layer selectively formed on the barrier layer, a drain electrode positioned at one of both sides of the semiconductor layer and formed on the barrier layer, an insulating film formed on the barrier layer adjacent to the semiconductor layer between at least semiconductor layer and drain electrode, and a field plate electrode formed on the insulating film.

The present application provides a nonaqueous electrolyte secondary battery which includes a cathode having a cathode active material layer, an anode, and a nonaqueous electrolyte, wherein the cathode active material layer includes secondary particles of a lithium phosphate compound having olivine structure, an average particle diameter A of primary particles constituting the secondary particles is 50 nm or more and 500 nm or less, and a ratio B / A of a pore diameter B of the secondary particles to the average particle diameter A of the primary particles is 0.10 or more and 0.90 or less.

Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.

Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

A biosensor which comprises a substrate (101) having a buried electronic sensing element and a substrate surface (124) above the buried electronic sensing element; a structured top layer (125) covering the substrate surface (124), having a top surface above the substrate surface (124), and comprising at least one stimulation and / or sensing electrode (116) and a channel (121) for holding the biomolecule by means of suction through said channel (121) arranged between the top surface (125) and the substrate surface (124), the sensing electrode (116) being electrically coupled to the electronic sensing element; wherein the top surface (125) is provided for placing a biomolecule present in a sample solution thereupon, the sensing electrode (116) is provided for sensing electrical variations in and presence of the biomolecule.

An electrical pressure sensor is provided with a method for measuring pressure applied to a sensor surface. The method provides an electrical pressure sensor including a sealed chamber with a top surface, first electrode, second electrode, an elastic polymer medium, and metallic nanoparticles distributed in the elastic polymer medium. When the top surface of the sensor is deformed in response to an applied pressure, the elastic polymer medium is compressed. In response to decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance between metallic nanoparticles, the electrical resistance is decreased between the first and second electrodes through the elastic polymer medium.

A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.

A touch panel is constructed of a top sheet member having a resistive membrane on its inner surface and a base sheet member having a resistive membrane on its inner surface, the top and base sheet members facing each other with dot spacers being located in between. The top sheet member is formed by laminating a PET film, a polarizing film, a ¼lambd retardation film, and a light isotropic film in this order from its outer surface. The PET film has a thermal expansion coefficient lower than the other films underneath, such as the polarizing film. Accordingly, the PET film serves to keep the other films of the top sheet member from bulging outward when the temperature rises.

A coating composition for pre-treating a substrate prior to inkjet printing thereon, and an inkjet receiving medium comprising a substrate and having a topmost layer coated thereon, where the coating composition and topmost layer comprise one or more aqueous-soluble salts of multivalent metal cations, a cationic polyelectrolyte comprising amidine moieties, and one or more second polymer which is distinct from the cationic polyelectrolyte and which is selected from the group consisting of a polyamide-epichlorohydrin, a polyamine solution polymer, and a waterborne or water-dispersible polyurethane. The topmost layer is advantageously at a solid content of from 0.1 to 5 g / m2, and comprises from 30-90 wt % of the one or more aqueous soluble salts of multivalent metal cations, at least 0.01 g / m2 of the cationic polyelectrolyte comprising amidine moieties, and at least 0.005 g / m2 of the second polymer which is distinct from the cationic polyelectrolyte comprising amidine moieties.

A non-aqueous solvent secondary battery with a high initial charge / discharge capacity and excellent charge / discharge characteristics at high temperature, having a positive electrode containing a positive electrode active material capable of reversibly occluding and releasing lithium, a negative electrode containing a negative electrode active material capable of reversibly occluding and releasing lithium and a non-aqueous solvent electrolyte containing (1) acrylic acid anhydride, and (2) an aromatic compound having at least one electron donating group, wherein the electron donating group comprises at least one member selected from any of the alkyl group, alkoxy group, alkylamino group and amine, provided that each of the alkyl group, alkoxy group and alkylamino group includes a halogen substituted group and a cycloaliphatic group.

A magnetic latch system including a latch assembly and a keeper assembly. The keeper assembly includes a magnetically attractable keeper pin. The latch assembly includes a magnet and a movable internal lever which is arranged to engage the keeper pin to move it away from the permanent magnet. The system may also include a lock to hold the internal lever in a fixed position so that it cannot be moved to move the keeper pin away from the magnet.

The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on / off state of a transistor of a Tx switch coupled between a Tx port and an I / O port is controlled by a Tx control bias. The on / off state of the transistors of the Rx switch coupled between the I / O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.

A trench MOSFET with short channel length and super pinch-off regions is disclosed, wherein the super pinch-off regions are implemented by forming at least two type pinch-off regions for punch-through prevention: a first type pinch-off region with a wide mesa width generated between lower portion of two adjacent trenched gates and below an anti-punch through region surrounding bottom of a trenched source-body contact filled with metal plug; a second type pinch-off region with a narrow mesa width generated below a body region and between upper portion of one trenched gate and the anti-punch-through region along sidewall of the trenched source-body contact.

A genetically modified bacteriophage is disclosed which comprises:(i) an exogenous polynucleotide which encodes an agent which reduces the toxicity of a bacterium; and(ii) an exogenous polynucleotide which encodes a selectable marker.Uses thereof and kits comprising same are also disclosed.

A semiconductor device having high electric characteristics and in which a capacitor is efficiently formed even if the semiconductor device has a miniaturized structure. In a top-gate (also referred to as staggered) transistor using an oxide semiconductor film as its active layer, a source electrode and a drain electrode has a two-layer structure (a first electrode film and a second electrode film). Then, a capacitor is formed using a film formed using a material and a step similar to those of the first electrode film, a gate insulating film, and a gate electrode. Accordingly, the transistor and the capacitor can be formed through the same process efficiently. Further, the second electrode is connected onto the oxide semiconductor film between a first electrode and a channel formation region of the transistor. Accordingly, resistance between source and drain electrodes can be reduced; therefore, electric characteristics of the semiconductor device can be improved.

An electrical pressure sensor is provided with a method for measuring pressure applied to a sensor surface. The method provides an electrical pressure sensor including a sealed chamber with a top surface, first electrode, second electrode, an elastic polymer medium, and metallic nanoparticles distributed in the elastic polymer medium. When the top surface of the sensor is deformed in response to an applied pressure, the elastic polymer medium is compressed. In response to decreasing the metallic nanoparticle-to-metallic nanoparticle mean distance between metallic nanoparticles, the electrical resistance is decreased between the first and second electrodes through the elastic polymer medium.

A coated article and method therefor comprises a metal substrate comprising a layered coating composition on at least one surface thereof, the coating composition comprising a layer of epoxy on one or more of the surfaces of the substrate. The coating composition further comprises an overcoat layer comprising a combination of polyolefin and epoxy resins, the overcoat layer optionally being free of added epoxy curative. The article can be a pipe, vessel, conduit, rod, profile-shaped article, or tube. A preferred overcoat layer comprises a semi- or full-epoxy / polyolefin interpenetrating polymer network (IPN). In another embodiment, the coated article comprises a polyolefin / epoxy layer that is directly coated on at least one surface of a metal substrate, the polyolefin / epoxy coating being overcoated with a thermoplastic top coating, the coated article being free of added adhesive. The metal article preferably is a pipe, vessel, conduit, rod, profile shaped article or tube.

A coating composition for pre-treating a substrate prior to inkjet printing thereon, and an inkjet receiving medium comprising a substrate and having a topmost layer coated thereon, where the coating composition has a solids content which comprises at least 30 wt % of one or more aqueous soluble salts of multivalent metal cations, and particles comprised primarily of polymer having a Rockwell Hardness of less than R90 and having a mode equivalent spherical diameter of at least about 2 micrometers. When coated, the composition provides at least 0.01 g / m2 of particles comprised primarily of polymer having a Rockwell Hardness of less than R90 and which have an equivalent spherical diameter of i) at least about 2 micrometers and ii) at least 0.1 micrometer greater than the minimum coated thickness of the topmost layer.

Provided are: an antistatic agent which is capable of imparting excellent antistatic effect in a small amount and has sufficient persistence and wiping resistance; an antistatic agent composition; an antistatic resin composition; and a molded article. The antistatic agent comprises a polymer compound (E) having a structure in which a block polymer (C) and an epoxy compound (D) are bound via an ester bond formed by a carboxyl group of the block polymer (C) and an epoxy group of the epoxy compound (D), the block polymer (C) having a structure comprising carboxyl groups at both ends, in which structure a block constituted by a polyester (A) having carboxyl groups at both ends and a block constituted by a compound (B) having hydroxyl groups at both ends are repeatedly and alternately bound via ester bonds formed by the carboxyl groups and the hydroxyl groups, and the epoxy compound (D) comprising two or more epoxy groups.

A coating composition for pre-treating a substrate prior to inkjet printing thereon, and an inkjet receiving medium including a substrate and having a topmost layer coated thereon, where the coating composition has a solids content which includes at least 30 wt % of one or more aqueous soluble salts of multivalent metal cations, and particles had primarily of polymer having a Rockwell Hardness of less than R90 and having a mode equivalent spherical diameter of at least about 2 micrometers. When coated, the composition provides at least 0.01 g / m2 of particles included primarily of polymer having a Rockwell Hardness of less than R90 and which have an equivalent spherical diameter of i) at least about 2 micrometers and ii) at least 0.1 micrometer greater than the minimum coated thickness of the topmost layer.

A sealed prismatic battery has a battery case made of a plurality of prismatic cell cases coupled together via partition walls. Electrode plate groups are accommodated together with liquid electrolyte in each of the cell cases. Each electrode plate group consists of alternately stacked-up positive and negative electrode plates with separators interposed therebetween, lead portions of positive and negative electrode plates being protruded on opposite sides. Collectors are bonded to these lead portions. Between the collectors and end walls (and / or partition walls) of the battery case are provided conductive plates that are connected to the collectors one or more than one location in their middle part so as to decrease the resistance between connection terminals and the electrode plate groups.

A field-effect transistor provided with a channel layer, a carrier supply layer forming a heterojunction with the channel layer, a recessed portion recessed from a surface of the carrier supply layer, a first insulating layer formed at least along the recessed portion, a first gate electrode formed on the first insulating layer, a source electrode formed on one side of the recessed portion in a channel lengthwise direction, and a drain electrode formed on an opposite side of the recessed portion in the channel lengthwise direction. The recessed portion snakes in a direction intersecting the channel lengthwise direction, in the range of a channel length between the source electrode and the drain electrode.

A method for joining sections of coated pipe comprises providing two sections of metal pipe, each section of metal pipe having at least a first polymeric coating on its outer surface. The first polymeric coating comprises a first polymer coating selected from the group consisting of a first epoxy / olefin interpenetrating polymer network (IPN) layer, a thermoplastic layer, and a thermosetting layer. The sections of metal pipe are aligned end-to-end and bonded together to form a desired closure. A second polymeric coating comprising a layer of epoxy / olefin semi- or full-IPN is applied to the closure and to any desired additional area of coated pipe to form a seam and to secure the joint. A method for patching a damaged coated pipe using a patch comprising a polyolefin / epoxy semi-or full IPN is also disclosed. A kit comprises a semi-IPN and / or full-IPN repair stick, sheet-like patch, melt, or powder, which is useful to repair damage to a polymer coated metal pipe or to girth weld together ends of two sections of a polymer coated metal pipe.

A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar transistor, an oxide semiconductor layer, a source and drain electrode layers including a stack of a first conductive layer and a second conductive layer, a gate insulating layer, and a gate electrode layer are sequentially stacked in this order. The gate electrode layer is overlapped with the first conductive layer with the gate insulating layer provided therebetween, and is not overlapped with the second conductive layer with the gate insulating layer provided therebetween.

The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors.