168results about How to "Prevent characteristic deterioration" patented technology

A method for fabricating a magnetic tunnel junction device includes forming an insulation layer having a plurality of openings, forming a first electrode over the bottom and the sidewall of an opening of the plurality of openings, forming a magnetic tunnel junction layer over the first electrode, and forming a second electrode over the magnetic tunnel junction layer to fill the remaining openings.

Claw-shaped magnetic poles are alternately disposed along the rotation plane of a rotor of an electric rotating machine, and a permanent magnet is disposed between the claw-shaped magnetic poles. Surface of the permanent magnet is coated with a coating layer. The coating layer is composed of a anticorrosive material performing sacrificial anticorrosion (metal flake in a coating film rusts prior to a matrix resulting in protection of the matrix) such as inorganic material containing zinc and a film of the anticorrosive material is formed by spraying. Ionization tendency of zinc is larger than that of iron composing the permanent magnet, and the permanent magnet is difficult to be rusted owing to the sacrificial anticorrosion. Consequently, anticorrosion of the permanent magnet disposed between the claw-shaped magnetic poles is improved.

The invention belongs to the technical field of a power semiconductor device and specifically relates to a groove gate charge storage type IGBT (insulated gate bipolar transistor). The bottom and side surfaces of a gate electrode in a groove of the device are provided with a double-split electrode equipotential with an emitter and a dielectric layer between the double-split electrode and the gate electrode, so that under the condition of not influencing threshold voltage and turning on of the IGBT device, grid capacitance is reduced, switching speed of the device is improved, and switching loss of the device is reduced; and meanwhile, the side-surface split electrode and a floating p-type base region at one side of the side-surface split electrode improve short circuit safety operation area of the device and carrier concentration distribution of the whole N drifting region, thereby improving performance and reliability of the device. The double-split groove gate charge storage type IGBT manufacturing method does not need extra processing steps, and is compatible with a conventional CSTB manufacturing method.

This invention is a filter circuit having a filter element. A filter element (4) is a parallel resonator circuit including a pair of first resonator lines (19a) (19b) formed by a thick film forming technique and a pair of second resonator lines (20a) (20b). As the thickness of the pair of second resonator lines (20a) (20b) is significantly reduced, the impedance ratio between the pair of second resonator lines (20a) (20b) and the pair of first resonator lines (19a) (19b) is increased. Therefore, the length of these pairs of resonator lines (19a) (19b) (20a) (20b) is reduced and miniaturization of the filter element is realized.

Pixels including a photoelectric conversion element 1, a signal transfer TFT (thin film transistor) 2 electrically connected to the photoelectric conversion element, and a reset TFT 3 electrically connected to the photoelectric conversion element and for applying a bias to the photoelectric conversion element are two-dimensionally disposed on the insulating substrate, and the photoelectric conversion element 1, signal transfer TFT 2, and reset TFT 3 are electrically connected through a common contact hole 9. A source or drain electrode of the signal transfer TFT 2 and the source or drain electrode of the reset TFT 3 are formed from a common electroconductive layer.

A driving circuit of a liquid crystal display includes: a timing controller to output a gate control signal and a data control signal to control driving of a gate driving unit and a data driving unit and to output digital video data; a pair of gate driving units to be alternately driven by using at least one frame as a period to supply gate signals to gate lines of a liquid crystal panel in-response to the gate control signal; and a data driving unit to supply pixel signals to data lines of the liquid crystal panel in response to the data control signal. Degradation of characteristics of transistors constituting each gate driver can be prevented.

Disclosed is a MIMO / diversity antenna high isolation including a printed circuit board, a plurality of antenna elements, a current conversion element connected with a common ground of the printed circuit board apart from the antenna elements at a predetermined distance, wherein the current conversion element is coupled with the antenna elements to induce an electric current from the antenna elements into the antenna elements again via the common ground.

An electrophoretic display device sequentially driven during a data updating period when a data is updated and a sleep-mode period when a data is maintained includes an electrophoretic display panel including a plurality of data lines crossing a plurality of gate lines to form a plurality of cells, a plurality of pixel electrodes, a common electrode for driving each of the plurality of cells, and a TFT at a crossing of one of the data lines and one of the gate lines to supply a data voltage from the one of the data lines to a corresponding one of the pixel electrodes; a data driving circuit supplying the data voltage to the data lines during the data updating period; a gate driving circuit supplying a scanning pulse to the gate lines during the data updating period; and a controller sequentially raising an impedance of each of the data lines, the common electrode, and the gate lines during the sleep-mode period.

A winding device of a wire body having a simple arrangement and a winding method wherein the cut end wire at the end of winding is contained in an annular guide arranged movably on one end part side and does not project from the annular guide. The annular guide (20b) is arranged such that it can cover one flange part of the wire body winding bobbin (3) and provided with a cut (24) for guiding the wire body, wherein the diameter of the inner circumferential surface (25) is enlarged sequentially toward the direction away from the bobbin. The annular guide (20b) may be shaped to have a stop part (26) for preventing the wire body from projecting to the outside of the bobbin. The annular guide (20b) is arranged on the flange part (3a) movably in the axial direction of the bobbin or the annular guide (20b) is constituted of a plurality of parts which are moved to be arranged annularly on the flange part (3a).

In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing / reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input / output line. Thus, a chip area overhead attributable to the installation of the defective memory cell relief circuit is minimized. In addition, an address comparing circuit for a defective memory cell substitution is no longer necessary, and an access time overhead attributable to the address substitution operation does not occur.

The present invention provides a ceramic electronic component that does not intrude into a ceramic body with a plating solution, and a ceramic electronic component manufacturing method for simply manufacturing such a ceramic electronic component. A ceramic electronic component includes a ceramic body on which terminal electrodes are formed on both end faces. The terminal electrode includes a sintered external electrode and a plating film formed thereon. In order to form the ceramic electronic component, a ceramic body having external electrodes is dipped in a water-repellent treatment agent, dried, and subjected to electroplating treatment. The water repellent treatment agent includes functional groups that are easily adsorbed on the external electrodes and functional groups that have hydrophobicity.