108results about How to "Make up bulky" patented technology

Apparatus and methods for controlling operations of a touchscreen terminal having grip sensors are disclosed. A grip signal is detected when the terminal is gripped. A touch-inactive area is established in the touchscreen area based at least upon the grip signal. Touches occurring within the touch-inactive area are designated as non-executable gripping touches. Accordingly, unintentional touch executions due to an overlapping grip are prevented.

Methods and apparatus for providing manned, e.g., live customer support to customers, e.g., people using the Internet to purchase goods and / or services are described. A person viewing a Web Site, e.g., a customer, is presented with a button which provides the opportunity to talk to a customer service representative. Upon activating the button, e.g., by clicking on it, the customer's computer or other Internet browser device sends a signal, e.g., a call request message, over the Internet indicating that the customer wants to talk with a service representative. The call request message includes the customer's telephone number and / or IP address. In response to the call request message, calling equipment is used to establish a customer service call between the customer and a customer service representative. The equipment can be owned by the telephone company thereby avoiding the need for E-business companies to make investments in telephone equipment. In addition, a customer service representative can be located either at the E-business site or remotely, e.g., at the customer service representative's private home or other site, with the representative being called by the conference equipment as required to service a customer. Voice over IP conference equipment may be used instead or in conjunction with telephone conference equipment where one or both of the customer and service representative have voice over IP capability.

Methods which can be applied during the epitaxial growth of semiconductor structures and layers of III-nitride materials so that the qualities of successive layers are successively improved. An intermediate epitaxial layer is grown on an initial surface so that growth pits form at surface dislocations present in the initial surface. A following layer is then grown on the intermediate layer according to the known phenomena of epitaxial lateral overgrowth so it extends laterally and encloses at least the agglomerations of intersecting growth pits. Preferably, prior to growing the following layer, a discontinuous film of a dielectric material is deposited so that the dielectric material deposits discontinuously so as to reduce the number of dislocations in the laterally growing material. The methods of the invention can be performed multiple times to the same structure. Also, semiconductor structures fabricated by these methods.

An inkjet printing head 1 includes a piezoelectric element 6 having a lower electrode 7, a piezoelectric film 8 formed above the lower electrode 7, and an upper electrode 9 formed above the piezoelectric film 8, a hydrogen barrier film 13 covering an entirety of a side surface of the upper electrode 9 and the piezoelectric film 8, and an interlayer insulating film 14 that has an opening 17 at an upper surface center of the upper electrode 9, is laminated on the hydrogen barrier film 13, and faces the entirety of the side surface of the upper electrode 9 and the piezoelectric film 8 across the hydrogen barrier film 13.

A case body (a first member) and a cap member (a second member) that have not been subjected to welding include a protrusion consisting of at least one of a first protrusion that protrudes from a first outer surface and a second protrusion that protrudes from a second outer surface when the case body and the cap member are assembled together such that the first outer surface is flush with the second outer surface. The protrusion is placed between the first outer surface and the second outer surface. In a condition where the first outer surface and second outer surface of the pre-welding case body and cap member are flush with each other, and the protrusion is placed between the first outer surface and the second outer surface, the protrusion is irradiated with a laser beam, so that the case body and the cap member are welded together with the protrusion providing a part of a weld. Thus, a method of producing a welded structure is provided for producing a welded structure in which the first member and the second member are firmly welded together.

A display driver driving a display panel according to inputted display data comprises: a first circuit changing brightness of a display image by conversion of the display data based on a first reference value and a second reference value, the first reference value being a display data value at a first position in an upper part of a histogram of the inputted display data, and the second reference value being a display data value at a second position in a lower portion of the histogram; a second circuit changing brightness of a illuminating device illuminating the display panel based on the first reference value; and a control circuit performing a processing of making the brightness of the display image high by the first circuit and a processing of making the brightness of the illuminating device low by the second circuit in correlation with the brightness of the display image.

Methods which can be applied during the epitaxial growth of semiconductor structures and layers of III-nitride materials so that the qualities of successive layers are successively improved. An intermediate epitaxial layer is grown on an initial surface so that growth pits form at surface dislocations present in the initial surface. A following layer is then grown on the intermediate layer according to the known phenomena of epitaxial lateral overgrowth so it extends laterally and encloses at least the agglomerations of intersecting growth pits. Preferably, prior to growing the following layer, a discontinuous film of a dielectric material is deposited so that the dielectric material deposits discontinuously so as to reduce the number of dislocations in the laterally growing material. The methods of the invention can be performed multiple times to the same structure. Also, semiconductor structures fabricated by these methods.

In a large capacity semiconductor storage device having a multi-bank configuration, it is desired to reduce a peak current of one refresh operation, to avoid an interference between adjacent banks, and to prevent a data breaking of a memory cell caused by a lack of a data hold time. A semiconductor storage device includes: a memory cell array part including a plurality of banks; a refresh control circuit configured to output a refresh timing control signal periodically; and an access control circuit configured to perform a refresh operation on a group of banks which are not adjacent to one another in accordance with a preset combination of banks which are simultaneously activated and a preset activating order when the refresh timing control signal is supplied.