1155results about How to "Improve stamina" patented technology

A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.

High performance and endurance non-volatile memory (NVM) based storage systems are disclosed. According to one aspect of the present invention, a NVM based storage system comprises at least one intelligent NVM device. Each intelligent NVM device includes a control interface logic and NVM. Logical-to-physical address conversion is performed within the control interface logic, thereby eliminating the need of address conversion in a storage system level controller. In another aspect, a volatile memory buffer together with corresponding volatile memory controller and phase-locked loop circuit is included in a NVM based storage system. The volatile memory buffer is partitioned to two parts: a command queue; and one or more page buffers. The command queue is configured to hold received data transfer commands by the storage protocol interface bridge, while the page buffers are configured to hold data to be transmitted between the host computer and the at least one NVM device.

A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.

Devices and methods are provided with respect to a gate stack for a nonvolatile structure. According to one aspect, a gate stack is provided. One embodiment of the gate stack includes a tunnel medium, a high K charge blocking and charge storing medium, and an injector medium. The high K charge blocking and charge storing medium is disposed on the tunnel medium. The injector medium is operably disposed with respect to the tunnel medium and the high K charge blocking and charge storing medium to provide charge transport by enhanced tunneling. According to one embodiment, the injector medium is disposed on the high K charge blocking and charge storing medium. According to one embodiment, the tunnel medium is disposed on the injector medium. Other aspects and embodiments are provided herein.

A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from a floating gate, the programmable conductor is switched between its low and high resistive states to operate the flash memory cell. The resulting cell can be erased faster and has better endurance than a conventional flash memory cell.

A non-pneumatic tire comprises circumferentially-spaced support elements joined together by an interconnection structure with the interposition of flexible joints, so as to ensure good overall operation.

Disclosed herein is a plexus of filaments which is composed of groups of filaments, whose filament members are linked together, in a repetitious pattern, and whose filaments may be interlaced or linked to bisecting groups of filaments, creating a patterned plexus whose filament members generally follow spiraling paths, while linking with neighboring filaments, creating a group, or interlaced groups, of tension distributive filaments within a plexus of filaments; said plexus exhibiting greater conformal and constrictive qualities in comparison to the prior art. Also disclosed is a method of producing filament structures for a variety of uses including composite structures with tension displacement properties, and sporting goods requiring conformal load distribution with minimal weight; such as, running shoes.

A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.

An organic electroluminescence device includes a substrate, a plurality of light-emitting elements arranged on the substrate, each including a pair of electrodes and an organic light-emitting layer disposed between the electrodes, an organic buffer layer covering the plurality of light-emitting elements, and a gas barrier layer covering the organic buffer layer. The gas barrier layer has a structure wherein first inorganic films and second inorganic films are alternately stacked. The first inorganic films contain a silicon compound containing nitrogen, the second inorganic films contain an oxide of the formation material of the first inorganic films and each have a thickness smaller than that of each first inorganic film. The numbers of the first inorganic films and the second inorganic films are each at least two.

A dual ducted fan arrangement in which the duct components, engine, and avionics / payload pods are capable of being quickly disassembled to fit within common backpacking systems. Each duct is identical in fan, stator, and control vane design. Assembly connections between ducted fans and electronic modules are also identical. An engine or APU drives the dual ducted fans through a splined shaft to a differential or through electric motors. Energy is transferred to the ducted fans by a single gear mounted to the stator hub. Relative speeds of the individual ducted fans are controlled through separate frictional or generator load control braking mechanisms on each of the splined shafts between the differential and ducted fans. In the electric motor case relative speed is through electronic speed control. The fans are counter rotating for torque balancing. The electronic module locations are vertically variable for longitudinal center of gravity for variations in payloads.

A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.

Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed / erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.

The present invention provides a non-volatile memory cell, comprising a tunnel dielectric layer disposed on the substrate, a barrier dielectric layer disposed over the tunnel dielectric layer, a graded charge trapping layer disposed between the tunnel dielectric layer and the barrier dielectric layer, a gate conductive layer disposed on the barrier dielectric layer and a source / drain region disposed in the substrate. The compositional ratio of the graded trapping layer gradually varies in different positions of the graded trapping layer.

A method of wear leveling for a non-volatile memory is performed as follows. First, the non-volatile memory is divided into a plurality of zones including at least a first zone and a second zone. The first zone is written and / or erased in which one or more logical blocks have higher writing hit rate, and therefore the corresponding physical blocks in the first zone will be written more often. The next step is to find one or more free physical blocks in second zone. The physical blocks of the first zone are replaced by the physical blocks of the second zone if the number of write and / or erase to the first zone exceeds a threshold number. The replacement of physical blocks in the first zone by the physical blocks in the second zone may include the steps of copying data from the physical blocks in the first zone to the physical block in the second zone, and changing the pointer of logical blocks to point to the physical blocks in the second zone.

An unmanned aerial vehicle adapted for hover and short / vertical take-off and landing (S / VTOL) is disclosed. The vehicle comprises: a body having an aspect-ratio less than two and having therein a payload volume, at least one propeller located forward of the body, at least one rudder. The body may have an inverse Zimmerman planform which provides lift as air flows across the body in horizontal flight / fixed wing mode, and further adapted such that during hover and / or short / vertical take-off and landing (S / VTOL) the vehicle operates as a rotorcraft with the body oriented with the at least one propeller substantially above the body. The vehicle is suited to a method of inspection, such as power line inspection where large distances can be analysed efficiently by flying in fixed wing mode, but by transitioning to hover mode allows detailed inspection of selected areas.

The invention discloses a myoelectric feedback control electric stimulation device and a control method thereof, relating to the field of medical instruments. The control method comprises the steps of: collecting a myoelectric signal of a tested object; transmitting the myoelectric signal to a myoelectric signal amplifying unit; converting the myoelectric signal into a digital myoelectric signal; transmitting the digital myoelectric signal to a signal processing and controlling unit; calculating the myoelectric amplitude of the digital myoelectric signal; obtaining the myoelectric amplitude; and judging whether the myoelectric amplitude equals to the optimal myoelectric amplitude; if yes, not changing a stimulation mode, generating a stimulation waveform of the stimulation mode by an electric stimulation generating unit, and carrying out stimulant therapy on the tested object through stimulating electrodes; and if not, adjusting the stimulation mode by the electric stimulation generating unit and the signal processing and controlling unit, using the adjusted stimulation mode as a stimulation mode for the next time, generating a stimulation waveform of the stimulation mode, and carrying out stimulant therapy on the tested object through the stimulating electrodes. According to the myoelectric feedback control electric stimulation device and the control method thereof, the purpose of achieving the optimal stimulation effect in different stimulation modes is realized through adjustment of the stimulation mode.

A vehicle body frame structure capable of realizing the connection to a side body in the form of structural connection. The vehicle body frame structure includes a side body whose skeleton is formed by a body panel that forms a side face of the vehicle body and a reinforcement member that is formed into a shape extending along the inside of the body panel and joined to the body panel, a front frame member that forms a front body disposed to form a shape extending from the side body to the front of the vehicle body, and an outer frame member joined to the front frame member from side of the vehicle body and secured to the reinforcement member by means of bolts extending through the body panel.

A groove (27) is formed above a first group of interconnects (21, 23a) of a first substrate, continuously extending along a substrate outer perimeter portion and across the first group of interconnects (21, 23a). An underlying metal (27a) is provided in the same layer in which a second group of interconnects (23) are provided, below the groove (27) in at least regions in which the groove (27) overlaps the first group of interconnects (21, 23a) as viewed from above.

The invention discloses a medlar and red date enzyme and a preparation method thereof, which belong to the technical field of enzyme preparation. Multi-strain composite fungi powder is adopted as a leavening agent; the medlar and the red date are adopted as main raw materials; dietary fiber, pectin hydrolyzate, seasoner extracting liquor, Chinese herbal medicine extracting liquor, enzyme stabilizer and other multifunctional auxiliary raw materials are scientifically compounded and modified; low-temperature processing technology such as ultrasonic cleaning, cryogenic grinding, microwave-assisted high-voltage pulse electric field processing and ultrasonic ripening are mainly adopted in the whole process, so that the natural colors, the flavor, the taste and the content of the active materials of the medlar and the red date are maintained furthest, the biological stability, the non-biological stability and the biological activity of the medlar and red date enzyme are obviously enhanced, the introduction of chemical addition agent is reduced, and the juicing rate of the medlar and the red date as well as the food safety of the enzyme are improved. Finally, the medlar and red date enzyme with high biological activity, strong stability, strong taste, flavor and appetite, long expiration date and edible safety is prepared.

Non-pneumatic resilient wheel (10), that is supported structurally and defines three perpendicular directions, circumferential (X), axial (Y) and radial (Z), this wheel comprising: a hub (11); an annular band referred to as a shear band (13) comprising at least one inner circumferential membrane (14) and one outer circumferential membrane (16) that are oriented in the circumferential direction X; and a plurality of support elements (12) that connect the hub (11) to the inner circumferential membrane (14)U. The two membranes (14, 16) are connected to one another by means of a series, that extends in the circumferential direction (X), of cylinders (15) referred to as connection cylinders, said connection cylinders (15) being non-touching in the circumferential direction X and having their generatrix oriented in the axial direction Y. The connection cylinders (15) are composite cylinders comprising fibres embedded in a resin matrix.

Sectional flooring is provided. The sectional flooring includes first, second, and third floor boards (10,20 and 30) and a coupling member (40) for connecting the first and second floor boards (10 and 20) that are arranged to be adjacent to each other in a longitudinal direction. The coupling member (40) includes a base portion (41) placed over-adjacent first and second floor boards (10 and 20), a pair of side hooks (42) protruding from opposite ends of the base portion (41) toward top surfaces of the first and second floor boards (10 and 20), and a pair of cantilever hooks (43) spaced apart from each other by a predetermined distance and protruding from a center of the base portion (41). Each of the cantilever hooks (43) includes a hook step (431). The hook step (431) includes an upper portion formed with an inclined surface inclined at a predetermined lead angle (OL) and a lower portion is formed with an inclined surface inclined at a predetermined return angle (OR).

A memory device is described using a composite doped phase change material between a first electrode and a second electrode. A memory element of phase change material, such as a chalcogenide, is between the first and second electrodes and has an active region. The phase change material has a first dopant, such as silicon oxide, characterized by tending to segregate from the phase change material on grain boundaries in the active region, and has a second dopant, such as silicon, characterized by causing an increase in recrystallization temperature of, and / or suppressing void formation in, the phase change material in the active region.

A high endurance, short retention NAND memory is used as a read cache for a memory of a higher level of non-volatility, such as standard NAND flash memory or a hard drive. The combined memory system identifies frequently read logical addresses of the main non-volatile memory or specific read sequences and stores the corresponding data in cache NAND to accelerate host reads. This may also reduce host's DRAM requirements. In some arrangements, special commands or partitions can be used by operating system to identify these fast read areas. The main non-volatile memory will typically also maintain a back-up copy of data in the cache NAND. In some embodiments, the read cache can be implemented as a middle layer between the host and storage system, say as an SATA-SATA bridge dongle to boost read access for frequently read data or specific patterns, such as a boot sequence.

Phase change based memory devices and methods for operating such devices described herein overcome the set or reset failure mode and result in improved endurance, reliability and data storage performance. A high current repair operation is carried out in response to a set or reset failure of a phase change memory cell. The higher current repair operation can provide a sufficient amount of energy to reverse compositional changes in the phase change material which can occur after repeated set and reset operations. By reversing these compositional changes, the techniques described herein can recover a memory cell which experienced a set or reset failure, thereby extending the endurance of the memory cell. In doing so, phase change based memory devices and methods for operating such devices are provided which have high cycle endurance.

An air vehicle assembly and a corresponding method for launching an air vehicle assembly are provided, along with corresponding control systems and methods. The air vehicle assembly may include a plurality of air vehicles releasably joined to one another during a portion of the flight, such as during take-off and landing. By being releasably joined to one another, such as during take-off and landing, the air vehicles can rely upon and assist one another during the vertical take-off and landing while being designed to have a greater range and higher endurance following the transition to forward flight, either while remaining coupled to or following separation from the other air vehicles. By taking into account the states of the other air vehicles, the control system and method also permit the air vehicles of an air vehicle assembly to collaborate.