The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in
voltage applied, a first
electrode provided on a first side of the film, and a second
electrode provided on a second side of the film. The film is formed on the second
electrode by a
vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0<x≦1, 0<y≦1, and 2.5<z≦3. A first value of x / y in a first area of the film 100 nm apart from a surface of contact with the second electrode toward the first electrode ranges from 0.8 to 1.6 or is 0.7 times or more but not greater than 1.5 times a second value of x / y in a center area of the film, or the first area has a ratio of
perovskite peaks to
pyrochlore peaks as measured by XRD of 0.2 or more.