33results about How to "Smooth surface roughness" patented technology

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset in a range of approximately 5.16 eV to 7.8 eV. Gate oxides formed from elements such as zirconium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

A piston processing apparatus includes a work attaching head capable of fixing a piston material, a work rotating device, a grinding wheel, a grinding wheel rotating device, first and second moving mechanisms for moving the grinding wheel, a rotational angle detector for detecting a rotational angle of the work attaching head, a first and second position detectors for detecting a position of a grinding surface of the grinding wheel, a controller controls the first and second moving mechanisms to grind the outer circumferential surface by the grinding wheel based on target-position information of the grinding surface corresponding to a position on the outer circumferential surface of the piston material. According to the piston processing apparatus, the outer circumferential surface of the piston material can be processed into a three-dimensional shape with high-accuracy, and a piston that can improve fuel efficiency.

The present invention provides a method of manufacturing a bonded wafer, including performing RTA under an atmosphere containing hydrogen on a bonded wafer after separating the bond wafer constituting the bonded wafer, and subsequently performing a sacrificial oxidation process to reduce the thickness of the thin film, wherein the RTA is performed under conditions of a retention start temperature of more than 1150° C. and a retention end temperature of 1150° C. or less. The invention can inhibit the BMD density from increasing and sufficiently flatten the surface of a thin film when the thin film of the bonded wafer is flattened and thinned by the combination of the RTA and sacrificial oxidation processes.

The invention relates to a coating cutting tool and a manufacturing method thereof. The coating cutting tool is composed of a base material and a hard material coating, and the base material is selected from cemented carbide, cermet, ceramic, cubic boron nitride (cBN), polycrystalline diamond (PCD) or high speed steel (HSS), wherein the hard material coating comprises a (Ti,Al)N layer stack (L) of alternately stacked (Ti,Al)N sublayers , said layer stack (L) is characterized in that: - the total atomic ratio of Ti:Al in said (Ti,Al)N layer stack (L) is in the range of 0.33:0.67 to 0.67:0.33; - The total thickness of the (Ti,Al)N layer stack (L) is in the range of 1 μm to 20 μm; - in the (Ti,Al)N layer stack of alternately stacked (Ti,Al)N sublayers Each individual (Ti,Al)N sublayer within (L) has a thickness in the range of 0.5 nm to 50 nm; Each individual (Ti,Al)N sublayer within the stack (L) differs from the immediately adjacent (Ti,Al)N sublayer in the atomic ratio Ti:Al; On the thickness of the (Ti, Al)N layer stack (L), from the interface of the (Ti, Al)N layer stack (L) aligned toward the substrate to the at the interface of the (Ti,Al)N layer stack (L) in the direction of the outer surface of the coating, the Al content increases and the Ti content decreases; - at the (Ti,Al)N layer perpendicular to the substrate surface , Al)N layer stack (L), from the interface of the (Ti,Al)N layer stack (L) aligned towards the substrate to the layer aligned towards the outside of the coating At the interface of said (Ti,Al)N layer stack (L) in the direction of the surface, the residual stress σ drops by an amount of at least 150 MPa to at most 900 MPa, whereby applying the sin based on (200) reflection 2 Ψ method to measure the residual stress σ by X-ray diffraction; Said residual stress σ in a portion of a thickness of at least 100 nm to at most 1 μm from the interface of the layer stack (L) is in the range of 0 MPa to +450 MPa.