1364results about How to "Good shape retention" patented technology

A thin film deposition method with respect to a substrate including a pattern structure includes supplying RF power through a component disposed below a substrate, forming a potential on an exposed surface of the substrate exposed to a reaction space, moving the active species to the exposed surface in the reaction space using the potential, and forming a thin film including active species component on the exposed surface of the substrate.

A method of forming a trench-type device isolation layer in which a trench is filled through two steps, wherein a polysilazane solution is coated on a semiconductor substrate, in which a trench for device isolation layer is formed, in a spin on glass (SOG) manner to form an SOG layer filling a predetermined portion of the trench. In order to maintain a conformal coating thickness without overfilling the trench, the polysilazane solution preferably has a solid-state perhydro polysilazane ([SiH2NH]n) of between about 5 to about 15 percent by weight. Following formation of the SOG layer, a subsequent annealing process is carried out. The SOG layer is etched to make a top surface of the remaining SOG layer recessed down to a degree of about 1000 Å from an inlet of the trench, and a remaining space of the trench is filled with an ozone TEOS USG layer or an HDP CVD layer.

The present invention provides a semiconducting device including at least one gate region including a gate conductor located on a surface of a substrate, the substrate having an exposed surface adjacent the gate region; a silicide contact located adjacent the exposed surface; and a stress inducing liner located on the silicide contact, the exposed surface of the substrate adjacent to the gate region and the at least one gate region, wherein the stress inducing liner provides a stress to a device channel portion of the substrate underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 200 MPa to about 2000 MPa. The present invention also provides a method for forming the above-described semiconducting device.

A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited intermediate oxide junction layer formed from one or more oxide monolayers i.e., AlxOy, disposed on the first nitride junction layer, and an ALD deposited second nitride junction layer formed from one or more nitride monolayers i.e., AlN, disposed on top of the intermediate oxide junction layer. The multilayer tunnel barrier structure is formed by using atomic layer deposition techniques to provide improved tunneling characteristics while also providing anatomically smooth barrier interfaces.

The present invention provides a rubber composition having adequate foamability, uses thereof, a copolymer contained in the rubber composition, a rubber composition capable of providing a cross-linked foam, which has a low specific gravity and an excellent shape-retaining property even when the usage of a nonconjugated polyene is reduced, and a cross-linked rubber and a cross-linked foam, which are produced from the rubber composition. A copolymer (A) according to the present invention is a copolymer including structural units derived from ethylene [A], an α-olefin [B], a nonconjugated polyene [C-1], in which one carbon-carbon double bond (C═C) polymerizable with a metallocene catalyst is present in one molecule, and a nonconjugated polyene [C-2], in which two bonds of C═C polymerizable with the metallocene catalyst are present in one molecule, and being synthesized with the metallocene catalyst, wherein (1) the units derived from the component [B] constitute 10 to 50 percent by mole, (2) the total of the units derived from the component [C-1] and the units derived from the component [C-2] is 1.0 to 6.0 percent by mole, (3) the molar ratio of the units derived from the component [C-1] to the units derived from the component [C-2] is 75 / 25 to 99.5 / 0.5, (4) [ML (1+4) 100° C.] is 10 to 200, and (5) 50>activation energy of fluidization (kJ / mol)>35 is satisfied.