The invention belongs to the technical field of polysilicon purification by a
physical metallurgy technology, in particular to a method for removing
phosphorus and
boron of impurities in polysilicon by an
electron beam
smelting technology. In the method, two
electron guns are used for emitting
electron beams to respectively smelt the polysilicon; meanwhile, the
phosphorus and the
boron in the polysilicon are removed by a dual technology; the
phosphorus in the polysilicon is removed at first, the polysilicon with low phosphorus is further smelted and evaporated to remove the
boron; and the polysilicon with low phosphorus and boron, which is evaporated, on a depositing plate is collected. The adopted device comprises a shell and a
vacuum chamber, wherein the shell comprises a vacuum cover and a vacuum
barrel; an inner cavity of the vacuum
barrel is the
vacuum chamber; and the
vacuum chamber comprises a left cavity and a right cavity which are partitioned by an isolating plate. The invention effectively improves the purity of the polysilicon, reaches the use requirement of
solar energy-grade
silicon and has good purifying effect, stable technology and high efficiency.