A
capacitor memory is realized, wherein a
capacitor stores data and a
diode controls to store data “1” or “0”.
Diode has four terminals wherein first terminal serves as word line, second terminal serves as storage node, third terminal is floating, and fourth terminal serves as
bit line, wherein
back channel effect is suppressed adding additional ions in the bottom side of third terminal or applying
negative voltage in the well or substrate. A
capacitor plate couples to second terminal, which plate has no
coupling region to first, third and fourth terminal. With no
coupling, the inversion layer of plate in the storage node is isolated from the adjacent nodes. In doing so, the plate can swing
ground level to positive supply level to write. As a result, no negative generator is required for controlling plate. Word line and
bit line keep
ground level during standby, and rise to supply level for read or write operation. In this manner, no
holding current is required during standby, and operating current is dramatically reduced with no negative generator. Write has a sequence to clear the state of
cell before writing to store data regardless of previous state.
Refresh cycle is periodically asserted to sustain data. The present invention can be applied for destructive read, or for nondestructive read adding pull-down device to
bit line. The height of
cell is almost same as
control circuit on the bulk or SOI
wafer.