168results about How to "Improve material quality" patented technology

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 10<5>, nitrogen source material partial pressure in a range of from about 1 to about 10<3 >torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10<2 >microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

A design and manufacturing method for a photovoltaic (PV) solar cell less than 100 μm thick are disclosed. A porous silicon layer is formed on a wafer substrate. Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All front side processing of the solar cell (junctions, passivation layer, anti-reflective coating, contacts to the N⁺-type layer) is performed while the thin epitaxial layer is attached to the porous layer and substrate. The wafer is then clamped and exfoliated. The back side of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, passivation, patterning of contacts, deposition of a conductive coating, and contacts to the P⁺-type layer. During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cell

The present document describes methods and systems for the automatic inspection of material quality. A set of lights with a geometric pattern is cast on a material to be analyzed. Depending on the material being inspected, same may act as a mirror and the reflected image is captured by a capture device, or the light passes through the material being inspected and the image is captured by a capture device. Defects in the material can be detected by the distortion caused by same in the pattern of the reflected image or passing through. Finally, software is used to identify and locate these distortions, and consequently the defects in the material. This classification of defects is carried out using artificial intelligence techniques.

A method for enhancing the bonding and linear weld density along the interface of material layers deposited in accordance with an ultrasonic consolidation manufacturing process, the method comprising: initiating an ultrasonic consolidation manufacturing process; depositing a first material layer having a contact surface; reducing surface roughness of the contact surface to prepare the contact surface to receive a subsequent material layer, the step of reducing facilitating an increased percentage and quality of material contact between the first and subsequent material layers; and bonding a subsequent material layer to the contact surface of the first material layer, as prepared.

A light source section outputs optical flux having two types of wavelength, which are a short wavelength and a long wavelength, while the intensity is made variable. The optical flux is made incident to a detected surface of a body to be detected at a predetermined incident angle simultaneously or alternatively. Based on a type of optical flux outputted from the light source section and an output from a first light intensity detecting section, at least the intensity of the optical flux having a long wavelength outputted from the light source section is adjusted. The output from the first light intensity detecting section in irradiating the optical flux having a short wavelength is compared with the output from the first light intensity detecting section in irradiating the optical flux having a long wavelength. A signal that appears only in the output from the first light intensity detecting section in irradiating the optical flux having a long wavelength is identified as a detected signal from an internal subject. The intensity of optical flux having a long wavelength is adjusted. A disappearance level near a point where the detected signal from the internal subject disappears is calculated. The first intensity of optical flux having a long wavelength is set to level higher than the disappearance level. Based on the output from the first light intensity detecting section obtained by the optical flux having a long wavelength of the first intensity, a subject inside the body to be detected is measured.

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm³ per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.

The invention discloses a method for improving antistatic capability of a gallium nitride based light emitting diode. The method comprises the following steps: selecting a substrate; growing a gallium nitride nucleating layer on the substrate; growing an involuntary doped gallium nitride layer on the gallium nitride nucleating layer; growing an aluminum gallium nitride/ gallium nitride superlattice insertion layer on the involuntary doped gallium nitride layer; growing an N-type doped gallium nitride layer on the aluminum gallium nitride/ gallium nitride superlattice insertion layer; growing an indium gallium aluminum nitride multiple quantum-well light-emitting layer on the N-type doped gallium nitride layer; growing a P-type doped indium gallium aluminum nitride layer on the indium gallium aluminum nitride multiple quantum-well light-emitting layer; and growing a P-type doped gallium nitride layer on the P-type doped indium gallium aluminum nitride layer. By utilizing the method provided by the invention, the stress caused by lattice mismatch in an epitaxial layer can be modulated, simultaneously the dislocation in the epitaxial layer of the GaN (gallium nitride) can be deflected and combined, thus the density of threading dislocation in the epitaxial layer developed subsequently is reduced, the material quality is improved, and the antistatic capability of the light emitting diode is improved.

An injection molding system for injection molding a plurality of molten materials into a mold cavity includes a nozzle, a drop tip supported by the nozzle, and a central bore extending through the nozzle and drop tip. The injection molding system also includes a first and second flow passage each extending through the nozzle, so as to define a first and second nozzle flow passage, and drop tip, so as to define a first and second drop tip flow passage. The first and second drop tip flow passages each include a plurality of branching portions each defining a junction at which the respective flow passage communicates fluidly with the central bore.

The disclosure relates to multiple quantum well (MQW) structures for intrinsic regions of monolithic photovoltaic junctions within solar cells which are substantially lattice matched to GaAs or Ge. The disclosed MQW structures incorporate quantum wells formed of quaternary InGaAsP, between barriers of InGaP.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 125 mm; a thickness equal to or greater than 200 μm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient≦0.2 cm⁻¹ at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10⁻⁴.

A toilet seat includes a toilet bowl and a toilet platform. A toilet platform includes a bowl seat having a seating portion and a mounting portion. A seat hinge mechanism includes two spaced apart retention bases adapted for securely mounting at the toilet platform of the toilet bowl wherein the joint members are detachably engaged with the retention bases respectively for detachably mounting bowl seat on the toilet platform of the toilet bowl in a tool-less manner.

An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

The invention provides a large-mismatch silicon-based substrate antimonide transistor with high electron mobility. The large-mismatch silicon-based substrate antimonide transistor comprises a substrate, a composite buffering layer growing on the substrate, an insert layer growing on the composite buffering layer, an AlSb isolation layer growing on the insert layer, a sub channel layer growing on the AlSb isolation layer, an antimonide lower potential barrier layer growing on the sub channel layer, an InAs channel layer growing on the antimonide lower potential barrier layer, an antimonide isolation layer growing on the InAs channel layer, a doping layer growing on the antimonide isolation layer, wherein the doping layer is InAs doped with a Si plane or delta doping of Te; an upper potential barrier layer growing on the doping layer, wherein the upper potential barrier layer is a composite potential barrier layer consisting of an AlSb layer and an InAlAs layer; and an InAs cap layer growing on the upper potential barrier layer, wherein the InAs cap layer is an unintentionally doped InAs or n type doped InAs.

The invention discloses a precise measuring method of crystalline silicon body lifetime. The precise measuring method of the crystalline silicon body lifetime comprise the steps that minority carrier lifetime is measured through a quasi-steady-state photoelectric conduction method, a true value of the silicon wafer minority carrier lifetime can be obtained accurately and quickly through a quasi-steady-state minority carrier lifetime measuring method, the effective minority carrier lifetime comprises a body lifetime and a surface recombination lifetime, on the precise of the same silicon wafer recombination conditions, the true body lifetime of the silicon wafer is obtained by calculating through formulas, and the calculated true body lifetime of the silicon wafer is similar to the body lifetime measured through the photoconductive decay method. The method for measuring the minority carrier lifetime through the quasi-steady-state photoelectric conduction method and obtaining the true body lifetime through calculation has the advantages of being simple, fast, free of contamination and the like.

A heteroepitaxy strain-management structure for a light emitting device includes: a substrate or template; an epitaxial layer to be epitaxially formed over the substrate or template, wherein a calculated in-plane compressive strain to be exerted by the substrate or template to the epitaxial layer is equal to or larger than 1%; and a heavily doped interlayer inserted in-between the epitaxial layer and the substrate or template; wherein the heavily doped interlayer is of substantially the same material composition as that of the epitaxial layer, with a thickness of 40-400 nm, and doped at a doping level in the range of 5×10¹⁹ to 5×10²⁰ cm⁻³. Also provided is an ultraviolet light emitting device having a heteroepitaxy strain-management structure.

The utility model relates to a growth method of a THz quantum stage linked semiconductor laser material, which is characterized in comprising the following growth steps: step 1: A semiinsulating gallium arsenide substrate is adopted; step 2: N-shaped ohmic contact layer under the gallium arsenide is grown on the semiinsulating gallium arsenide substrate via the use of the molecular rays epitaxial technique to make a lower ohmic electrode; step 3: An active area is grown on the lower ohmic contact layer to form a luminous zone; step 4: An N-shaped gallium arsenide upper ohmic contact layer is grown on the active area to make a lower ohmic electrode to accomplish the growth of the THz quantum stage linked semiconductor laser material.