31 results about "Lift-off" patented technology

The invention concerns a lift-off process for patterning layers that are deposited and / or sputtered. The invention provides a two-layer resist and a patterning method using the resist. The patterning method can readily produce burr-free layers on a substrate. The method comprises the steps of: sequentially applying positive radiation-sensitive resin compositions 1 and 2 to form a two-layer laminate; subjecting the two-layer resist to single exposure and development to produce fine patterns having an undercut cross section; depositing and / or sputtering an organic or inorganic thin layer with use of the resist pattern as a mask; and lifting off the resist pattern to leave a pattern of the thin layer in desired shape.

Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

The invention relates to a method of releasing an ensemble of nanofibers from a dielectric substrate as well as to applications of the method. The organic nanofibers are grown on the substrate and can be released by first providing a polar liquid to a surface of the substrate and subsequently supplying energy to the combined system of nanofibers and liquid. The release may preferably be followed by transferring the released nanofibers to another substrate for application of the nanofibers, including alignment and / or structuring of the nanofibers. The applications includes light emitting, guiding and sensing applications.

A panel for a flexible digital X-ray detector and a method for manufacturing the same are disclosed. The flexible digital X-ray detector reduce device characteristic deterioration caused by X-ray exposure, increase flexibility to the panel by reducing a thickness of the panel yet provide rigidity to maintain the shape of the panel, and reduce residual impurities during a Laser Lift Off (LLO) process. The panel can include a multi-buffer layer in which a silicon oxide (SiOx) layer and a silicon nitride (SiNx) layer are alternately stacked, and a device array layer and a scintillator layer thatare disposed over the multi-buffer layer. During the LLO process, the method for manufacturing the panel includes increasing the hydrogen content using a sacrificial layer including an amorphous silicon (a-Si) layer and a silicon nitride (SiNx) layer disposed at both surfaces of the a-Si layer, such that the amount of residual impurities in the sacrificial layer can be reduced.

Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).

An optoelectronic device having a textured layer is described. In an aspect, a method may be used to produce the optoelectronic device, where the method includes epitaxially growing a semiconductor layer of the optoelectronic device on a growth substrate, and exposing the semiconductor layer to an etching process to create at least one textured surface in the semiconductor layer. The textured semiconductor layer can be referred to as a textured layer. The etching process is performed without the use of a template layer, or similar layer, configured as a mask to generate the texturing. The etching process can be done by one or more of a liquid or solution-based chemical etchant, gas etching, laser etching, plasma etching, or ion etching. The method can also include lifting the semiconductor layer of the optoelectronic device from the growth substrate by, for example, the use of an epitaxial lift off (ELO) process.

A method for production of window elements which can be soldered into a housing in a hermetically tight manner with optical coating and free-form window elements are disclosed. After application of optical coatings, a protective layer is applied to the optical coating, the two layer systems are selectively removed by means of a machining beam of high-energy radiation for the purpose of ablation of a desired optically active free-form surface for window elements with any geometric shape through a localized machining beam in edge regions of the optically active free-form surface such that the protective layer remains on the optical coating as lift-off mask which is lifted off after applying a metallization for a solder layer by an etching process that acts selectively only on the protective layer but not on the optical coating, and the metallization remains only on the peripheral edge regions circumscribing the free-form surfaces.

The present application discloses a display panel and a preparation method thereof. The preparation method of the display panel includes the following steps: a gate layer preparation step, an active layer preparation step, an etching barrier layer preparation step, and a source-drain layer preparation step, The active layer preparation step includes a semiconductor layer preparation step and a first patterning treatment step. The technical effect of the present invention is that, by repeatedly using the source-drain photomask, combined with the Lift off technology, the preparation of the device with the etching barrier layer is realized, and the cost of the mask plate is reduced.

Aspects of the disclosure relate to processes for epitaxial growth of Group III / V materials at high rates, such as about 30 μm / hr or greater, for example, about 40 μm / hr, about 50 μm / hr, about 55 μm / hr, about 60 μm / hr, about 70 μm / hr, about 80 μm / hr, and about 90-120 μm / hr deposition rates. The Group III / V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III / V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III / V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III / V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

The invention provides a manufacturing method of a display panel. The manufacturing method comprises steps as follows: multiple patterned first flexible substrates are formed on a first rigid substrate, and multiple patterned second flexible substrates are formed on a second rigid substrate; an array process is completed on each first flexible substrate to form multiple array areas, and a color film process is completed on each second flexible substrate to form multiple color film areas; the array areas and the color film areas are in one-to-one correspondence to form multiple liquid crystal boxes; the liquid crystal boxes are cut and separated along boundaries of the first flexible substrates and the second flexible substrates; the first rigid substrate and the first flexible substrates of the liquid crystal boxes are lifted off, and the second rigid substrate and the second flexible substrates of the liquid crystal boxes are lifted off. The flexible substrates matched with the shapesof the liquid crystal boxes independently are formed in advance, during cutting, the liquid crystal boxes are cut and separated along the boundaries of the flexible substrates, and accordingly, the phenomenon of incomplete cutting of the morphology of cutting edges of the flexible substrates can be prevented.

The present disclosure provides a patterning process for an oxide film, including: covering a barrier layer composition on a substrate to form a patterned barrier layer, wherein the barrier layer composition includes an inorganic component and an organic binder with a weight ratio of 50-98:2-50; forming an oxide film on the patterned barrier layer and the substrate, wherein a thickness ratio (D1 / D2) of the barrier layer (D1) to the oxide film (D2) is about 5-2000; and lifting off the barrier layer and the oxide film thereon, while leaving portions of the oxide film on the substrate.

The invention belongs to the technical field of semiconductor integrated circuits, and relates to a method for improving abnormal pattern of thick metal layer LIFT OFF process, specifically photoresist coating-photoresist exposure-photoresist development-thick metal layer deposition-blue paste Film-blue film stripping-photoresist stripping; the LIFT OFF process method of the present invention, in the metal deposition process, adopts low-temperature process to avoid photoresist collapse, adopts low-speed multiple evaporation process, combined with blue film-assisted stripping method , not only reduces the thickness of the photoresist, but also avoids the oblique collapse of the thicker metal layer (above 3um) on the photoresist and the pattern abnormality caused by the crack of the photoresist, so as to finally realize the thick metal layer LIFT OFF process.

The present invention provides a lift-off method capable of reliably peeling off an epitaxial substrate. Provided is a lift-off method for transferring an optical device layer of an optical device wafer to a transfer substrate, which includes a transfer substrate bonding process, bonding the transfer substrate to the surface of the optical device layer of the optical device wafer; a gas layer forming process, The buffer layer is irradiated with pulsed laser light from the back side of the epitaxial substrate of the optical device wafer to form a gas layer at the interface between the epitaxial substrate and the buffer layer; the gas layer detection process detects the outermost gas in the formed gas layer the area of ​​the layer; the epitaxial substrate adsorption process, positioning the suction pad to the area where the outermost gas layer detected by the gas layer detection process in the epitaxial substrate is located, to adsorb the epitaxial substrate; and the optical device layer transfer process, The suction pad holding the epitaxial substrate is moved in a direction away from the epitaxial substrate to peel off the epitaxial substrate, and transfer the optical device layer to the transfer substrate.

The invention discloses a method for fabricating a split gate MOSFET, comprising: step 1, forming an epitaxial layer on a substrate; step 2, depositing a first oxide layer on a first main surface; step 3, forming a trench; Fourth, remove the first oxide layer; step five, form a second oxide layer in the trench; step six, form a separation gate polysilicon in the trench; step seven, form an isolation oxide layer between polysilicon; step eight, in the trench forming a nitride layer; step 9, forming sacrificial polysilicon in the trench; step 10, removing the nitride layer above the sacrificial polysilicon to form a mask structure; step 11, using the mask structure as an etching mask to remove the inter-polysilicon isolating the second oxide layer above the oxide layer; step 12, removing the nitride layer to lift off the sacrificial polysilicon. In the present invention, the isolation oxide layer between polysilicons that meets the technological requirements can be formed at one time through the high-density plasma chemical vapor deposition method or the low-temperature wet oxidation method.

The invention relates to semiconductor manufacturing, in particular to a method for manufacturing the isolation structure of a semiconductor device and a semiconductor device. The manufacturing process of the semiconductor device includes the following steps that: a substrate is provided; a device is formed on the substrate; and a conductive isolation structure is formed on the substrate. The method for forming the conductive isolation structure comprises the following steps that: a photoresist layer is formed on the device and the substrate; a grid structure is formed in the photoresist layer; the grid structure is reserved; a conductive layer is formed on the surfaces of the device, the substrate and the grid structure; and the grid structure is lifted off. According to the method of theinvention, a lift-off process is provided; the photoresist with a lift-off function is subjected to gridding treatment, so that the photoresist can still be in full contact with a solvent after a sample piece is subjected to angled evaporation, and lift-off operation is completed.

The application discloses a method for stripping a mobile metal product (3) having an oxide layer, using laser stripping, the method comprising the following steps: at least one first laser (6) is sent on the product to be stripped ( 3) the light beam (7) reflected on the oxidized surface, said emission beam (9) is intercepted by the sensor (8), which sends the collected information to the processing unit (10); the processing unit (10) calculates the product ( 3) the absorption of the light beam (7) by the surface of the oxidized surface in the direction of said reflected light beam (9) is deduced from this, and this emissivity is compared with the reference value pre-recorded in the processing unit (10) The information is associated; at least one second laser (13) sends a beam (14) onto the surface of the product to peel off the surface, the spot of the beam (14) passing through the spot of the beam (14) on the product ( 3) Optical and / or mechanical scanning methods that move laterally on the surface of the surface, or cover the entire surface to be peeled off by an optical system that converts light spots into lines, and the second laser (13) is controlled by the control unit (15 ) control which receives information provided by the processing unit (10) in order to determine the operation to be imposed on said second laser (13) by comparison with experimental results pre-recorded in the control unit (15) parameters in order to peel off the surface of the product (3); means (16, 17) for inspecting the peeled surface of the product (3) detect the effect of the peeling. The present application also relates to a device for carrying out the method.