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Display panel and manufacturing method thereof

A technology for display panels and preparation steps, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high cost of photomasks, achieve the effects of reducing production costs, improving reliability, and reducing damage

Active Publication Date: 2021-08-03
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the technical problem in the prior art that the mask usage cost is relatively high when preparing the display panel

Method used

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  • Display panel and manufacturing method thereof
  • Display panel and manufacturing method thereof
  • Display panel and manufacturing method thereof

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Embodiment Construction

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0029] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the a...

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Abstract

The present application discloses a display panel and a preparation method thereof. The preparation method of the display panel includes the following steps: a gate layer preparation step, an active layer preparation step, an etching barrier layer preparation step, and a source-drain layer preparation step, The active layer preparation step includes a semiconductor layer preparation step and a first patterning treatment step. The technical effect of the present invention is that, by repeatedly using the source-drain photomask, combined with the Lift off technology, the preparation of the device with the etching barrier layer is realized, and the cost of the mask plate is reduced.

Description

technical field [0001] The invention relates to the display field, in particular to a display panel and a preparation method thereof. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) can be divided into two categories: bottom gate structure and top gate structure according to the position of the gate. The top gate structure is characterized by the gate at the top, although the source and drain electrodes of this structure can be used The photolithography process prepares high-precision channels, but it is not conducive to the formation of the extended structure of the gate, and the bending of the gate structure may cause dislocation of the contact area between the electrode and the extended part; the bottom gate structure is characterized by the fact that the gate is directly deposited on the On the substrate, a good contact between the electrode and the extended structure can be achieved, and the bottom-gate thin film transistor can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786
CPCH01L29/66742H01L29/78633
Inventor 王建刚
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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