The invention discloses the method of wiping off the exterior
metal of the
silicon abandoned piece and reclaiming the
noble metal platinum. The
semiconductor parts of an apparatus and the
semiconductor integrate circuit abandoned
silicon piece are dipped in the
hydrochloric acid or the dilute
vitriol to wipe off the
metal alive than the
hydrogen, the
nitric acid is used to melt the cooper or the silver on the
silicon piece, the combination of thick
hydrochloric acid and the thick
nitric acid is used to melt the gold and the
platinum on the surface of the silicon piece, then the combination of the
hydrofluoric acid and the
nitric acid is used to melt the
metal silicon material on the surface of the silicon piece, the material silicon piece is gained with the cleaning, the
drying or the setting off. The metal alive than the
hydrogen is added in the said
silver nitrate solution to
gain the silver by the permutation, the
aqua regia containing the gold and the
platinum is heated or is added the alkali to get rid of the excessive
hydrochloric acid and the nitric acid, the
copper is added in the residual solution to
gain the gold or the platinum by the permutation. The invention can wipe off the metal
impurity and the metal silicon material on the surface of the abandoned silicon piece effectively, the disposed silicon piece can be used for the material of the sun energy silicon
single crystal, the
solar cell silicon piece can be gained by the more process, the
noble metal is reclaimed, so it is useful for circle utilize of the resource.