68 results about "Ruthenium tetroxide" patented technology

A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.

A process comprises forming ruthenium tetroxide by blowing ozone-containing gas into crude ruthenium powder while hypochlorous acid is being added to the powder, allowing a hydrochloric acid solution to absorb the ruthenium tetroxide, evaporating the solution to dryness, and roasting the RuOCl3 crystals thus obtained in a hydrogen atmosphere. Thus a high-purity ruthenium material for thin film deposition, typically sputtering targey, is obtained which contains less than 1 ppm each of alkali metal elements, less than 1 ppm each of alkaline earth metal elements, less than 1 ppm each of transition metal elements, less than 10 ppb each of radioactive elements, a total of less than 500 ppm of carbon and gaseous ingredient elements, the material having a purity of ruthenium of at least 99.995% excluding the gaseous ingredient elements.

The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.

An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.

Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.

The present invention provides a method of differentiating metallic carbon nanotubes from semiconducting carbon nanotubes. The method comprising providing a nanotube dispersion, wherein the nanotube dispersion comprises a plurality of carbon nanotubes, osmium tetroxide, or ruthenium tetroxide, and a solvent; and irradiating the nanotube dispersion with ultraviolet light, wherein the metallic carbon nanotubes are osmylated, or ruthenylated, thereby differentiating the metallic carbon nanotubes from the semiconducting carbon nanotubes.

Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.